DOI: 10.1016/0254-0584(94)90046-9. Properties of MoSe2 thin films obtained by solid state reactions between thin films and by d.c. diode sputtering

Properties of MoSe2 thin films obtained by solid state reactions between thin films and by d.c. diode sputtering

10.1016/0254-0584(94)90046-9

Crossref journal-article

Elsevier BV

Materials Chemistry and Physics (78)

Bibliography

Pouzet, J., & BernÃ¨de, J. C. (1994). Properties of MoSe2 thin films obtained by solid state reactions between thin films and by d.c. diode sputtering. Materials Chemistry and Physics, 36(3â4), 304â308.

Authors 2

J. Pouzet (first)
J.C. Bernède (additional)

References 20 Referenced 11

10.1016/0165-1633(79)90044-3 / Sol. Energy Mater. by Tributsch (1979)
10.1016/0013-4686(81)80002-3 / Electrochim. Acta by Tributsch (1981)
10.1016/0165-1633(82)90039-9 / Sol. Energy Mater. by Kline (1982)
10.1002/pssa.2210720202 / Phys. Status Solidi (a) by Chandra (1982)
10.1016/0040-6090(90)90129-2 / Thin Solid Films by Pawlikowski (1990)
10.1016/0254-0584(88)90061-2 / Mater. Chem. Phys. by Bernède (1988)
10.1051/rphysap:01990002508080700 / Rev. Phys. Appl. by Pouzet (1990)
10.1051/rphysap:01990002504033900 / Rev. Phys. Appl. by Bernède (1990)
10.1051/jp3:1991235 / J. Phys. III Fr. by Manaï (1991)
10.1051/jp3:1993114 / J. Phys. III Fr. by Ouadah (1993)
{'key': '10.1016/0254-0584(94)90046-9_BIB11', 'series-title': 'X-ray Diffraction Procedures', 'author': 'Klug', 'year': '1954'} / X-ray Diffraction Procedures by Klug (1954)
{'key': '10.1016/0254-0584(94)90046-9_BIB12', 'author': 'Kaeble', 'year': '1967'} by Kaeble (1967)
10.1002/pssa.2210350143 / Phys. Status Solidi (a) by Janda (1976)
10.1016/0040-6090(85)90031-8 / Thin Solid Films by Bischel (1985)
10.1080/14786437508219961 / Philos. Mag. by Goldberg (1975)
ASTM data file no. 15-658.
10.1002/pssb.2220490220 / Phys. Status Solidi (b) by Filinsky (1972)
10.1080/14786436908216338 / Philos. Mag. by Mott (1969)
{'key': '10.1016/0254-0584(94)90046-9_BIB19', 'series-title': 'Electronic Processes in Non-crystalline Materials', 'author': 'Mott', 'year': '1979'} / Electronic Processes in Non-crystalline Materials by Mott (1979)
10.1109/T-ED.1981.20437 / IEEE Trans. Electron. Devices by Lu (1981)

Dates

Type	When
Created	22 years, 2 months ago (June 20, 2003, 8:20 p.m.)
Deposited	6 years, 5 months ago (March 19, 2019, 11:58 a.m.)
Indexed	1 year, 9 months ago (Nov. 20, 2023, 9:30 a.m.)
Issued	31 years, 7 months ago (Jan. 1, 1994)
Published	31 years, 7 months ago (Jan. 1, 1994)
Published Print	31 years, 7 months ago (Jan. 1, 1994)

Funders 0

None

BibTeX

@article{Pouzet_1994, title={Properties of MoSe2 thin films obtained by solid state reactions between thin films and by d.c. diode sputtering}, volume={36}, ISSN={0254-0584}, url={http://dx.doi.org/10.1016/0254-0584(94)90046-9}, DOI={10.1016/0254-0584(94)90046-9}, number={3–4}, journal={Materials Chemistry and Physics}, publisher={Elsevier BV}, author={Pouzet, J. and Bernède, J.C.}, year={1994}, month=jan, pages={304–308} }

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