Crossref
journal-article
Elsevier BV
Materials Chemistry and Physics (78)
References
21
Referenced
24
10.1016/0038-1101(70)90124-3
/ Solid-State Electron. by Faggin (1970){'key': '10.1016/0254-0584(82)90022-0_BIB2', 'first-page': '125', 'volume': '52', 'author': 'Capece', 'year': '1979', 'journal-title': 'Electronics'}
/ Electronics by Capece (1979)10.1063/1.321593
/ J. Appl. Phys. by Seto (1975)10.1149/1.2127785
/ J. Electrochem. Soc. by Colinge (1981)10.1109/T-ED.1981.20504
/ IEEE. Trans. Electron. Devices by Mandurah (1981)10.1109/T-ED.1981.20505
/ IEEE. Trans. Electron. Devices by Mandurah (1981)10.1149/1.2124299
/ J.Electrochem. Soc. by Solmi (1982)10.1149/1.2131593
/ J. Electrochem. Soc. by Kamins (1978)10.1149/1.2131703
/ J. Electrochem. Soc. by Wada (1978)10.1149/1.2124295
/ J. Electrochem. Soc. by Mei (1982){'key': '10.1016/0254-0584(82)90022-0_BIB10', 'series-title': 'Grain boundary structure and properties', 'author': 'Chadwick', 'year': '1976'}
/ Grain boundary structure and properties by Chadwick (1976)10.1063/1.92717
/ Appl. Phys. Lett. by Angelucci (1981){'key': '10.1016/0254-0584(82)90022-0_BIB12', 'series-title': 'Semiconductor Silicon/1981', 'first-page': '254', 'author': 'Craven', 'year': '1981'}
/ Semiconductor Silicon/1981 by Craven (1981){'key': '10.1016/0254-0584(82)90022-0_BIB13', 'series-title': 'Grain Boundaries in Semiconductors', 'first-page': '71', 'author': 'Pollock', 'year': '1982'}
/ Grain Boundaries in Semiconductors by Pollock (1982){'key': '10.1016/0254-0584(82)90022-0_BIB14', 'series-title': 'Semiconductor Silicon/1977', 'first-page': '521', 'author': 'Patel', 'year': '1977'}
/ Semiconductor Silicon/1977 by Patel (1977)10.1063/1.330646
/ J. Appl. Phys. by Nobili (1982){'key': '10.1016/0254-0584(82)90022-0_BIB16', 'series-title': 'Grain Boundaries in Semiconductors', 'first-page': '65', 'author': 'Smith', 'year': '1982'}
/ Grain Boundaries in Semiconductors by Smith (1982)10.1149/1.2124034
/ J. Electrochem. Soc. by Antoniadis (1982)10.1149/1.2134111
/ J. Electrochem. Soc. by Fair (1975)10.1149/1.2119859
/ J. Electrochem. Soc. by Nobili (1983)10.1016/0038-1101(81)90211-2
/ Solid State Electron by Markino (1981)
Dates
Type | When |
---|---|
Created | 22 years, 2 months ago (June 21, 2003, 12:20 a.m.) |
Deposited | 6 years, 5 months ago (March 19, 2019, 2:21 p.m.) |
Indexed | 1 year, 6 months ago (Feb. 5, 2024, 11:19 a.m.) |
Issued | 41 years, 11 months ago (Sept. 1, 1983) |
Published | 41 years, 11 months ago (Sept. 1, 1983) |
Published Print | 41 years, 11 months ago (Sept. 1, 1983) |
@article{Angelucci_1983, title={Effect of impurities on the grain growth of chemical vapor deposited polycrystalline silicon films}, volume={9}, ISSN={0254-0584}, url={http://dx.doi.org/10.1016/0254-0584(82)90022-0}, DOI={10.1016/0254-0584(82)90022-0}, number={1–3}, journal={Materials Chemistry and Physics}, publisher={Elsevier BV}, author={Angelucci, R. and Severi, M. and Solmi, S.}, year={1983}, month=sep, pages={235–245} }