DOI: 10.1016/0250-6874(83)85057-4. Three-dimensional structuring of silicon for sensor applications

Three-dimensional structuring of silicon for sensor applications

10.1016/0250-6874(83)85057-4

Crossref journal-article

Elsevier BV

Sensors and Actuators (78)

Bibliography

Seidel, H., & Csepregi, L. (1983). Three-dimensional structuring of silicon for sensor applications. Sensors and Actuators, 4, 455â463.

Authors 2

H. Seidel (first)
L. Csepregi (additional)

References 13 Referenced 38

{'key': '10.1016/0250-6874(83)85057-4_BIB1', 'article-title': 'Technologie dünngeätzter Siliziumfolien im Hinblick auf monolitisch integrierbare Sensoren', 'author': 'Csepregi', 'year': '1980', 'journal-title': '1st Report NT 2506'} / 1st Report NT 2506 / Technologie dünngeätzter Siliziumfolien im Hinblick auf monolitisch integrierbare Sensoren by Csepregi (1980)
{'key': '10.1016/0250-6874(83)85057-4_BIB2', 'first-page': '238C', 'volume': '128', 'author': 'Kendall', 'year': '1981', 'journal-title': 'J. Electrochem. Soc.'} / J. Electrochem. Soc. by Kendall (1981)
{'key': '10.1016/0250-6874(83)85057-4_BIB3', 'first-page': '42', 'article-title': 'Herstellung von Sensoren in Silizium mit Hilfe von anisotropen Ätzen, NTG Fachberichte', 'author': 'Seidel', 'year': '1982', 'journal-title': 'Sensoren-Technologie und Anwendung, Bad Nauheim'} / Sensoren-Technologie und Anwendung, Bad Nauheim / Herstellung von Sensoren in Silizium mit Hilfe von anisotropen Ätzen, NTG Fachberichte by Seidel (1982)
{'key': '10.1016/0250-6874(83)85057-4_BIB4', 'first-page': '194', 'article-title': 'Studies on the anisotropy and selectivity of etchants used for the fabrication of stress-free structures', 'author': 'Seidel', 'year': '1982', 'journal-title': 'Electrochem. Soc. Spring Meeting'} / Electrochem. Soc. Spring Meeting / Studies on the anisotropy and selectivity of etchants used for the fabrication of stress-free structures by Seidel (1982)
10.1146/annurev.ms.09.080179.002105 / Ann. Rev. Mater. Sci. / Vertical etching of silicon at very high aspect ratios by Kendall (1979)
10.1149/1.2129289 / J. Electrochem. Soc. / The controlled etching of silicon in catalyzed ethylenediamine-pyrocatechol-water solutions by Reisman (1979)
{'key': '10.1016/0250-6874(83)85057-4_BIB7', 'first-page': '798', 'year': '1979', 'journal-title': 'ASTM Standards'} / ASTM Standards (1979)
H. J. Herzog, personal communication.
10.1109/T-ED.1978.19259 / IEEE Trans. Electron Devices / Dynamic micromechanics on silicon techniques and devices by Petersen (1978)
10.1109/T-ED.1978.19250 / IEEE Trans. Electron Devices / Anisotropic etching of silicon by Bean (1978)
10.1109/T-ED.1979.19792 / IEEE Trans. Electron Devices / Pressure sensitivity in anisotropically-etched thin-diaphragm pressure sensors by Clark (1979)
10.1149/1.2129585 / J. Electrochem. Soc. / Miniature cantilever beams fabricated by anisotropic etching of silicon by Jolly (1980)
{'key': '10.1016/0250-6874(83)85057-4_BIB13', 'first-page': '49', 'article-title': 'Polykristalline Siliziumschichten als Basismaterial für Sensoren', 'author': 'Obermeier', 'year': '1982', 'journal-title': 'NTG Fachberichte, Sensoren-Technologie und Anwendung, Bad Nauheim'} / NTG Fachberichte, Sensoren-Technologie und Anwendung, Bad Nauheim / Polykristalline Siliziumschichten als Basismaterial für Sensoren by Obermeier (1982)

Dates

Type	When
Created	23 years, 1 month ago (July 25, 2002, 5:03 a.m.)
Deposited	6 years, 3 months ago (May 4, 2019, 11:53 a.m.)
Indexed	2 months, 1 week ago (June 16, 2025, 8:07 a.m.)
Issued	42 years, 7 months ago (Jan. 1, 1983)
Published	42 years, 7 months ago (Jan. 1, 1983)
Published Print	42 years, 7 months ago (Jan. 1, 1983)

Funders 0

None

BibTeX

@article{Seidel_1983, title={Three-dimensional structuring of silicon for sensor applications}, volume={4}, ISSN={0250-6874}, url={http://dx.doi.org/10.1016/0250-6874(83)85057-4}, DOI={10.1016/0250-6874(83)85057-4}, journal={Sensors and Actuators}, publisher={Elsevier BV}, author={Seidel, H. and Csepregi, L.}, year={1983}, month=jan, pages={455–463} }

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