DOI: 10.1016/0169-4332(91)90376-u. Secondary electron yield of SiO2 and Si3N4 thin films for continuous dynode electron multipliers

Secondary electron yield of SiO2 and Si3N4 thin films for continuous dynode electron multipliers

10.1016/0169-4332(91)90376-u

Crossref journal-article

Elsevier BV

Applied Surface Science (78)

Bibliography

Fijol, J. J., Then, A. M., Tasker, G. W., & Soave, R. J. (1991). Secondary electron yield of SiO2 and Si3N4 thin films for continuous dynode electron multipliers. Applied Surface Science, 48â49, 464â471.

Authors 4

J.J. Fijol (first)
A.M. Then (additional)
G.W. Tasker (additional)
R.J. Soave (additional)

References 17 Referenced 66

10.1109/TNS.1966.4324084 / IEEE Trans. Nucl. Sci. by Adams (1966)
{'key': '10.1016/0169-4332(91)90376-U_bib2', 'author': 'Kurtz', 'year': '1979', 'journal-title': 'Am. Lab.'} / Am. Lab. by Kurtz (1979)
10.1016/0029-554X(79)90734-1 / Nucl. Instr. Meth. by Wiza (1979)
10.1117/12.948706 / Proc. SPIE by Fraser (1988)
{'key': '10.1016/0169-4332(91)90376-U_bib5', 'first-page': '153', 'volume': 'Vol. 40A', 'author': 'Hill', 'year': '1976'} by Hill (1976)
{'key': '10.1016/0169-4332(91)90376-U_bib6', 'first-page': '201', 'volume': '47', 'author': 'Tyutikov', 'year': '1980', 'journal-title': 'Sov. J. Opt. Technol.'} / Sov. J. Opt. Technol. by Tyutikov (1980)
10.1016/0022-3093(83)90420-9 / J. Non-Cryst. Solids by Simeonova (1983)
10.1016/0022-3093(90)90202-W / J. Non-Cryst. Solids by Then (1990)
10.1557/PROC-192-459 / Mater. Res. Soc. Proc. by Tasker (1990)
10.1117/12.21634 / Proc. SPIE by Horton (1990)
{'key': '10.1016/0169-4332(91)90376-U_bib11', 'first-page': '69', 'volume': 'Vol. 4', 'author': 'Whetton', 'year': '1964'} by Whetton (1964)
{'key': '10.1016/0169-4332(91)90376-U_bib12', 'first-page': '251', 'volume': 'Vol. 6', 'author': 'Dekker', 'year': '1958'} by Dekker (1958)
10.1063/1.1662156 / J. Appl. Phys. by Dionne (1973)
10.1063/1.332840 / J. Appl. Phys. by Selier (1983)
10.1063/1.1722794 / J. Appl. Phys. by Young (1957)
10.1111/j.1151-2916.1966.tb13208.x / J. Am. Ceram. Soc. by Charles (1966)
{'key': '10.1016/0169-4332(91)90376-U_bib17', 'series-title': 'VLSI Technology', 'first-page': '233', 'author': 'Adams', 'year': '1988'} / VLSI Technology by Adams (1988)

Dates

Type	When
Created	22 years, 10 months ago (Oct. 16, 2002, 4:55 a.m.)
Deposited	6 years, 4 months ago (April 8, 2019, 12:51 a.m.)
Indexed	5 days, 13 hours ago (Aug. 23, 2025, 9:24 p.m.)
Issued	34 years, 7 months ago (Jan. 1, 1991)
Published	34 years, 7 months ago (Jan. 1, 1991)
Published Print	34 years, 7 months ago (Jan. 1, 1991)

Funders 0

None

BibTeX

@article{Fijol_1991, title={Secondary electron yield of SiO2 and Si3N4 thin films for continuous dynode electron multipliers}, volume={48–49}, ISSN={0169-4332}, url={http://dx.doi.org/10.1016/0169-4332(91)90376-u}, DOI={10.1016/0169-4332(91)90376-u}, journal={Applied Surface Science}, publisher={Elsevier BV}, author={Fijol, J.J. and Then, A.M. and Tasker, G.W. and Soave, R.J.}, year={1991}, month=jan, pages={464–471} }

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