DOI: 10.1016/0167-9317(93)90158-2. Hot-electron dynamics in SiO2 and the degradation of the Si/SiO2-interface

Hot-electron dynamics in SiO2 and the degradation of the Si/SiO2-interface

10.1016/0167-9317(93)90158-2

Crossref journal-article

Elsevier BV

Microelectronic Engineering (78)

Bibliography

Cartier, E., & DiMaria, D. J. (1993). Hot-electron dynamics in SiO2 and the degradation of the Si/SiO2-interface. Microelectronic Engineering, 22(1â4), 207â210.

Authors 2

E. Cartier (first)
D.J. DiMaria (additional)

References 10 Referenced 30

10.1063/1.342824 / J. Appl. Phys. by DiMaria (1989)
10.1063/1.107081 / Appl. Phys. Lett. by DiMaria (1992)
10.1063/1.108233 / Appl. Phys. Lett. by DiMaria (1992)
10.1063/1.352936 / J. Appl. Phys. by DiMaria (1993)
10.1063/1.353901 / J. Appl. Phys. by Vuillaume (1993)
10.1103/PhysRevB.31.8124 / Phys. Rev. B by Fischetti (1985)
10.1103/PhysRevB.45.1477 / Phys. Rev. B by Arnold (1992)
10.1103/PhysRevB.44.10689 / Phys. Rev. B by Cartier (1991)
D.J. DiMaria. unpublished results
10.1063/1.332323 / J. Appl. Phys. by Lai (1983)

Dates

Type	When
Created	22 years, 10 months ago (Oct. 16, 2002, 4:59 p.m.)
Deposited	6 years, 4 months ago (April 7, 2019, 3:54 a.m.)
Indexed	5 months ago (March 24, 2025, 2:36 a.m.)
Issued	32 years ago (Aug. 1, 1993)
Published	32 years ago (Aug. 1, 1993)
Published Print	32 years ago (Aug. 1, 1993)

Funders 0

None

BibTeX

@article{Cartier_1993, title={Hot-electron dynamics in SiO2 and the degradation of the Si/SiO2-interface}, volume={22}, ISSN={0167-9317}, url={http://dx.doi.org/10.1016/0167-9317(93)90158-2}, DOI={10.1016/0167-9317(93)90158-2}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Cartier, E. and DiMaria, D.J.}, year={1993}, month=aug, pages={207–210} }

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