DOI: 10.1016/0167-9317(88)90022-6. Porous silicon: The material and its applications to SOI technologies

Porous silicon: The material and its applications to SOI technologies

10.1016/0167-9317(88)90022-6

Crossref journal-article

Elsevier BV

Microelectronic Engineering (78)

Bibliography

Bomchil, G., Halimaoui, A., & Herino, R. (1988). Porous silicon: The material and its applications to SOI technologies. Microelectronic Engineering, 8(3â4), 293â310.

Authors 3

G. Bomchil (first)
A. Halimaoui (additional)
R. Herino (additional)

References 30 Referenced 141

{'key': '10.1016/0167-9317(88)90022-6_BIB1', 'series-title': 'Proceedings NATO Summerschool', 'article-title': 'Heterostructures on silicon', 'author': 'Bensahel', 'year': '1988'} / Proceedings NATO Summerschool / Heterostructures on silicon by Bensahel (1988)
10.1109/MCD.1987.6323172 / IEEE Circuits and Devices Mag. / Porous silicon techniques for SOI structures by Tsao (1987)
10.1149/1.2100805 / J. Electrochem. Soc. / Porosity and pore size distributions of porous silicon layers by Herino (1987)
10.1016/0022-0248(84)90110-6 / J. Crystal Growth / X-ray topographic characterization of porous silicon layers by Barla (1984)
{'key': '10.1016/0167-9317(88)90022-6_BIB5', 'first-page': '726', 'article-title': 'Determination of lattice parameter and elastic properties of porous silicon by X-ray diffraction', 'volume': '69', 'author': 'Barla', 'year': '1984', 'journal-title': 'J. Cryst. Growth'} / J. Cryst. Growth / Determination of lattice parameter and elastic properties of porous silicon by X-ray diffraction by Barla (1984)
{'key': '10.1016/0167-9317(88)90022-6_BIB6', 'first-page': '11', 'article-title': 'Epitaxial growth of silicon on porous silicon', 'volume': '12', 'author': 'Labunov', 'year': '1983', 'journal-title': 'Mikroelektronika'} / Mikroelektronika / Epitaxial growth of silicon on porous silicon by Labunov (1983)
10.1063/1.95733 / Appl. Phys. Lett. / X-ray double crystal diffraction study of porous silicon by Young (1985)
A. Goudeau, A. Naudon, G. Bomchil and R. Herino, X-ray small-angle scattering analysis of porous silicon layers, Appl. Phys. Lett. (to appear). (10.1063/1.343528)
A. Bensaid, M. Brunel, F. De Bergervin, G. Patrat, G. Bomchil and R. Herino, Etude du silicium poreux par rayons X rasants, Réunion Annuelle de La Société Française de Cristallographie, Lyon, 88.
10.1088/0022-3719/17/35/020 / J. Phys. C: Solid State Phys. / Optical studies of the structure of porous silicon films formed in p-type degenerate and non-degenerate silicon by Pickering (1984)
10.1016/0168-583X(85)90757-8 / Nucl. Instr. Meths. Phys. Res. / Analysis of porous silicon by Earwaker (1985)
10.1016/0039-6028(66)90071-9 / Surface Science / Anodic dissolution of silicon in hydrofluoric acid solutions by Memming (1965)
{'key': '10.1016/0167-9317(88)90022-6_BIB13', 'series-title': '1988 European Silicon On Insulator Workshop', 'article-title': 'Configuration of hydrogen atoms chemisorbed in porous silicon film during anodisation process', 'author': 'Kato', 'year': '1988'} / 1988 European Silicon On Insulator Workshop / Configuration of hydrogen atoms chemisorbed in porous silicon film during anodisation process by Kato (1988)
10.1149/1.2129690 / J. Electrochem. Soc. / Formation mechanism of porous silicon by anodisation in HF solution by Unagami (1980)
10.1063/1.95807 / Appl. Phys. Lett. / Microstructure and formation mechanism of porous silicon by Beale (1985)
F. Gaspard, A. Bsiessy, M. Ligeon, F. Muller and R. Herino, Charge exchange mechanism responsible for P-type silicon dissolution during porous silicon formation, J. Electrochem. Soc. (to appear). (10.1149/1.2096399)
10.1557/S088376940006632X / MRS Bull. / Fractals models and the structure of materials by Schaefer (1988)
10.1016/0167-577X(84)90086-7 / Materials Lett. / Microstructure of porous silicon and its evolution with temperature by Herino (1984)
10.1103/PhysRevB.37.8234 / Phys. Rev. B / Hydrogen desorption kinetics from monohydride and dihydride species on silicon surfaces by Gupta (1988)
10.1063/1.339761 / J. Appl. Phys. / The kinetics and mechanism of oxide layer formation from porous silicon formed on p-Si substrates by Yon (1987)
10.1109/T-ED.1984.21518 / IEEE Trans. Electron. Dev. / FIPOS Technology and its application to LSI's by Imai (1984)
{'key': '10.1016/0167-9317(88)90022-6_BIB22', 'series-title': '1982 Symposium on VLSI Technology', 'article-title': 'FIPOS CMOS 16 K static RAM', 'author': 'Mano', 'year': '1982'} / 1982 Symposium on VLSI Technology / FIPOS CMOS 16 K static RAM by Mano (1982)
10.1063/1.339086 / J. Appl. Phys. / Selective porous silicon formation in buried p+ layers by Tsao (1987)
10.1063/1.93916 / Appl. Phys. Lett. / Complete dielectric isolation by highly selective and self-stopping formation of oxidized porous silicon by Holmstrom (1983)
10.1049/el:19860886 / Electron. Lett. / Characteristics of SOI CMOS circuits made in N/N+/N oxidized porous silicon structures by Barla (1986)
{'key': '10.1016/0167-9317(88)90022-6_BIB26', 'series-title': 'IEEE SOS-SOI Workshop', 'article-title': 'The “ISLANDS” method: a VLSI compatible SOI technology', 'author': 'Zorinsky', 'year': '1986'} / IEEE SOS-SOI Workshop / The “ISLANDS” method: a VLSI compatible SOI technology by Zorinsky (1986)
{'key': '10.1016/0167-9317(88)90022-6_BIB27', 'series-title': '1st European SOI Workshop', 'article-title': 'Fully depleted thin-film CMOS transistors in porous anodised silicon', 'author': 'Thomas', 'year': '1988'} / 1st European SOI Workshop / Fully depleted thin-film CMOS transistors in porous anodised silicon by Thomas (1988)
{'key': '10.1016/0167-9317(88)90022-6_BIB28', 'series-title': '1st International Symposium MBE', 'article-title': 'Improvement of Silicon epitaxy on porous silicon substrates', 'author': "Arnaud D'Avitaya", 'year': '1985'} / 1st International Symposium MBE / Improvement of Silicon epitaxy on porous silicon substrates by Arnaud D'Avitaya (1985)
10.1116/1.583128 / J. Vac. Sci. Technol. / A Study of silicon MBE on porous silicon substrates by Beale (1985)
L. Vescan, G. Bomchil, A. Halimaoui, R. Herino and A. Perio, Low temperature low pressure silicon epitaxy on porous silicon, Materials Lett. (to appear).

Dates

Type	When
Created	22 years, 10 months ago (Oct. 16, 2002, 9:41 p.m.)
Deposited	6 years, 4 months ago (April 7, 2019, 6:58 a.m.)
Indexed	1 year, 4 months ago (April 13, 2024, 1:55 a.m.)
Issued	36 years, 8 months ago (Dec. 1, 1988)
Published	36 years, 8 months ago (Dec. 1, 1988)
Published Print	36 years, 8 months ago (Dec. 1, 1988)

Funders 0

None

BibTeX

@article{Bomchil_1988, title={Porous silicon: The material and its applications to SOI technologies}, volume={8}, ISSN={0167-9317}, url={http://dx.doi.org/10.1016/0167-9317(88)90022-6}, DOI={10.1016/0167-9317(88)90022-6}, number={3–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Bomchil, G. and Halimaoui, A. and Herino, R.}, year={1988}, month=dec, pages={293–310} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2024,
        4,
        13
      ]
    ],
    "date-time": "2024-04-13T05:55:19Z",
    "timestamp": 1712987719957
  },
  "reference-count": 30,
  "publisher": "Elsevier BV",
  "issue": "3-4",
  "license": [
    {
      "start": {
        "date-parts": [
          [
            1988,
            12,
            1
          ]
        ],
        "date-time": "1988-12-01T00:00:00Z",
        "timestamp": 596937600000
      },
      "content-version": "tdm",
      "delay-in-days": 0,
      "URL": "https://www.elsevier.com/tdm/userlicense/1.0/"
    }
  ],
  "content-domain": {
    "domain": [],
    "crossmark-restriction": false
  },
  "published-print": {
    "date-parts": [
      [
        1988,
        12
      ]
    ]
  },
  "DOI": "10.1016/0167-9317(88)90022-6",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2002,
        10,
        17
      ]
    ],
    "date-time": "2002-10-17T01:41:58Z",
    "timestamp": 1034818918000
  },
  "page": "293-310",
  "source": "Crossref",
  "is-referenced-by-count": 141,
  "title": "Porous silicon: The material and its applications to SOI technologies",
  "prefix": "10.1016",
  "volume": "8",
  "author": [
    {
      "given": "G.",
      "family": "Bomchil",
      "sequence": "first",
      "affiliation": []
    },
    {
      "given": "A.",
      "family": "Halimaoui",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "R.",
      "family": "Herino",
      "sequence": "additional",
      "affiliation": []
    }
  ],
  "member": "78",
  "reference": [
    {
      "key": "10.1016/0167-9317(88)90022-6_BIB1",
      "series-title": "Proceedings NATO Summerschool",
      "article-title": "Heterostructures on silicon",
      "author": "Bensahel",
      "year": "1988"
    },
    {
      "key": "10.1016/0167-9317(88)90022-6_BIB2",
      "doi-asserted-by": "crossref",
      "first-page": "3",
      "DOI": "10.1109/MCD.1987.6323172",
      "article-title": "Porous silicon techniques for SOI structures",
      "volume": "3",
      "author": "Tsao",
      "year": "1987",
      "journal-title": "IEEE Circuits and Devices Mag."
    },
    {
      "key": "10.1016/0167-9317(88)90022-6_BIB3",
      "doi-asserted-by": "crossref",
      "first-page": "1994",
      "DOI": "10.1149/1.2100805",
      "article-title": "Porosity and pore size distributions of porous silicon layers",
      "volume": "134",
      "author": "Herino",
      "year": "1987",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "10.1016/0167-9317(88)90022-6_BIB4",
      "doi-asserted-by": "crossref",
      "first-page": "721",
      "DOI": "10.1016/0022-0248(84)90110-6",
      "article-title": "X-ray topographic characterization of porous silicon layers",
      "volume": "68",
      "author": "Barla",
      "year": "1984",
      "journal-title": "J. Crystal Growth"
    },
    {
      "key": "10.1016/0167-9317(88)90022-6_BIB5",
      "first-page": "726",
      "article-title": "Determination of lattice parameter and elastic properties of porous silicon by X-ray diffraction",
      "volume": "69",
      "author": "Barla",
      "year": "1984",
      "journal-title": "J. Cryst. Growth"
    },
    {
      "key": "10.1016/0167-9317(88)90022-6_BIB6",
      "first-page": "11",
      "article-title": "Epitaxial growth of silicon on porous silicon",
      "volume": "12",
      "author": "Labunov",
      "year": "1983",
      "journal-title": "Mikroelektronika"
    },
    {
      "key": "10.1016/0167-9317(88)90022-6_BIB7",
      "doi-asserted-by": "crossref",
      "first-page": "1133",
      "DOI": "10.1063/1.95733",
      "article-title": "X-ray double crystal diffraction study of porous silicon",
      "volume": "46",
      "author": "Young",
      "year": "1985",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "10.1016/0167-9317(88)90022-6_BIB8",
      "doi-asserted-by": "crossref",
      "unstructured": "A. Goudeau, A. Naudon, G. Bomchil and R. Herino, X-ray small-angle scattering analysis of porous silicon layers, Appl. Phys. Lett. (to appear).",
      "DOI": "10.1063/1.343528"
    },
    {
      "key": "10.1016/0167-9317(88)90022-6_BIB9",
      "unstructured": "A. Bensaid, M. Brunel, F. De Bergervin, G. Patrat, G. Bomchil and R. Herino, Etude du silicium poreux par rayons X rasants, R\u00e9union Annuelle de La Soci\u00e9t\u00e9 Fran\u00e7aise de Cristallographie, Lyon, 88."
    },
    {
      "key": "10.1016/0167-9317(88)90022-6_BIB10",
      "doi-asserted-by": "crossref",
      "first-page": "6535",
      "DOI": "10.1088/0022-3719/17/35/020",
      "article-title": "Optical studies of the structure of porous silicon films formed in p-type degenerate and non-degenerate silicon",
      "volume": "17",
      "author": "Pickering",
      "year": "1984",
      "journal-title": "J. Phys. C: Solid State Phys."
    },
    {
      "key": "10.1016/0167-9317(88)90022-6_BIB11",
      "doi-asserted-by": "crossref",
      "first-page": "317",
      "DOI": "10.1016/0168-583X(85)90757-8",
      "article-title": "Analysis of porous silicon",
      "volume": "B9",
      "author": "Earwaker",
      "year": "1985",
      "journal-title": "Nucl. Instr. Meths. Phys. Res."
    },
    {
      "key": "10.1016/0167-9317(88)90022-6_BIB12",
      "doi-asserted-by": "crossref",
      "first-page": "109",
      "DOI": "10.1016/0039-6028(66)90071-9",
      "article-title": "Anodic dissolution of silicon in hydrofluoric acid solutions",
      "volume": "4",
      "author": "Memming",
      "year": "1965",
      "journal-title": "Surface Science"
    },
    {
      "key": "10.1016/0167-9317(88)90022-6_BIB13",
      "series-title": "1988 European Silicon On Insulator Workshop",
      "article-title": "Configuration of hydrogen atoms chemisorbed in porous silicon film during anodisation process",
      "author": "Kato",
      "year": "1988"
    },
    {
      "key": "10.1016/0167-9317(88)90022-6_BIB14",
      "doi-asserted-by": "crossref",
      "first-page": "476",
      "DOI": "10.1149/1.2129690",
      "article-title": "Formation mechanism of porous silicon by anodisation in HF solution",
      "volume": "127",
      "author": "Unagami",
      "year": "1980",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "10.1016/0167-9317(88)90022-6_BIB15",
      "doi-asserted-by": "crossref",
      "first-page": "86",
      "DOI": "10.1063/1.95807",
      "article-title": "Microstructure and formation mechanism of porous silicon",
      "volume": "46",
      "author": "Beale",
      "year": "1985",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "10.1016/0167-9317(88)90022-6_BIB16",
      "doi-asserted-by": "crossref",
      "unstructured": "F. Gaspard, A. Bsiessy, M. Ligeon, F. Muller and R. Herino, Charge exchange mechanism responsible for P-type silicon dissolution during porous silicon formation, J. Electrochem. Soc. (to appear).",
      "DOI": "10.1149/1.2096399"
    },
    {
      "key": "10.1016/0167-9317(88)90022-6_BIB17",
      "doi-asserted-by": "crossref",
      "first-page": "22",
      "DOI": "10.1557/S088376940006632X",
      "article-title": "Fractals models and the structure of materials",
      "volume": "13",
      "author": "Schaefer",
      "year": "1988",
      "journal-title": "MRS Bull."
    },
    {
      "key": "10.1016/0167-9317(88)90022-6_BIB18",
      "doi-asserted-by": "crossref",
      "first-page": "519",
      "DOI": "10.1016/0167-577X(84)90086-7",
      "article-title": "Microstructure of porous silicon and its evolution with temperature",
      "volume": "2",
      "author": "Herino",
      "year": "1984",
      "journal-title": "Materials Lett."
    },
    {
      "key": "10.1016/0167-9317(88)90022-6_BIB19",
      "doi-asserted-by": "crossref",
      "first-page": "8234",
      "DOI": "10.1103/PhysRevB.37.8234",
      "article-title": "Hydrogen desorption kinetics from monohydride and dihydride species on silicon surfaces",
      "volume": "37",
      "author": "Gupta",
      "year": "1988",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "10.1016/0167-9317(88)90022-6_BIB20",
      "doi-asserted-by": "crossref",
      "first-page": "1042",
      "DOI": "10.1063/1.339761",
      "article-title": "The kinetics and mechanism of oxide layer formation from porous silicon formed on p-Si substrates",
      "volume": "62",
      "author": "Yon",
      "year": "1987",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "10.1016/0167-9317(88)90022-6_BIB21",
      "doi-asserted-by": "crossref",
      "first-page": "297",
      "DOI": "10.1109/T-ED.1984.21518",
      "article-title": "FIPOS Technology and its application to LSI's",
      "volume": "ED31",
      "author": "Imai",
      "year": "1984",
      "journal-title": "IEEE Trans. Electron. Dev."
    },
    {
      "key": "10.1016/0167-9317(88)90022-6_BIB22",
      "series-title": "1982 Symposium on VLSI Technology",
      "article-title": "FIPOS CMOS 16 K static RAM",
      "author": "Mano",
      "year": "1982"
    },
    {
      "key": "10.1016/0167-9317(88)90022-6_BIB23",
      "doi-asserted-by": "crossref",
      "first-page": "4182",
      "DOI": "10.1063/1.339086",
      "article-title": "Selective porous silicon formation in buried p+ layers",
      "volume": "62",
      "author": "Tsao",
      "year": "1987",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "10.1016/0167-9317(88)90022-6_BIB24",
      "doi-asserted-by": "crossref",
      "first-page": "386",
      "DOI": "10.1063/1.93916",
      "article-title": "Complete dielectric isolation by highly selective and self-stopping formation of oxidized porous silicon",
      "volume": "42",
      "author": "Holmstrom",
      "year": "1983",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "10.1016/0167-9317(88)90022-6_BIB25",
      "doi-asserted-by": "crossref",
      "first-page": "1291",
      "DOI": "10.1049/el:19860886",
      "article-title": "Characteristics of SOI CMOS circuits made in N/N+/N oxidized porous silicon structures",
      "volume": "22",
      "author": "Barla",
      "year": "1986",
      "journal-title": "Electron. Lett."
    },
    {
      "key": "10.1016/0167-9317(88)90022-6_BIB26",
      "series-title": "IEEE SOS-SOI Workshop",
      "article-title": "The \u201cISLANDS\u201d method: a VLSI compatible SOI technology",
      "author": "Zorinsky",
      "year": "1986"
    },
    {
      "key": "10.1016/0167-9317(88)90022-6_BIB27",
      "series-title": "1st European SOI Workshop",
      "article-title": "Fully depleted thin-film CMOS transistors in porous anodised silicon",
      "author": "Thomas",
      "year": "1988"
    },
    {
      "key": "10.1016/0167-9317(88)90022-6_BIB28",
      "series-title": "1st International Symposium MBE",
      "article-title": "Improvement of Silicon epitaxy on porous silicon substrates",
      "author": "Arnaud D'Avitaya",
      "year": "1985"
    },
    {
      "key": "10.1016/0167-9317(88)90022-6_BIB29",
      "doi-asserted-by": "crossref",
      "first-page": "732",
      "DOI": "10.1116/1.583128",
      "article-title": "A Study of silicon MBE on porous silicon substrates",
      "volume": "B3",
      "author": "Beale",
      "year": "1985",
      "journal-title": "J. Vac. Sci. Technol."
    },
    {
      "key": "10.1016/0167-9317(88)90022-6_BIB30",
      "unstructured": "L. Vescan, G. Bomchil, A. Halimaoui, R. Herino and A. Perio, Low temperature low pressure silicon epitaxy on porous silicon, Materials Lett. (to appear)."
    }
  ],
  "container-title": "Microelectronic Engineering",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://api.elsevier.com/content/article/PII:0167931788900226?httpAccept=text/xml",
      "content-type": "text/xml",
      "content-version": "vor",
      "intended-application": "text-mining"
    },
    {
      "URL": "https://api.elsevier.com/content/article/PII:0167931788900226?httpAccept=text/plain",
      "content-type": "text/plain",
      "content-version": "vor",
      "intended-application": "text-mining"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2019,
        4,
        7
      ]
    ],
    "date-time": "2019-04-07T10:58:09Z",
    "timestamp": 1554634689000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://linkinghub.elsevier.com/retrieve/pii/0167931788900226"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1988,
        12
      ]
    ]
  },
  "references-count": 30,
  "journal-issue": {
    "issue": "3-4",
    "published-print": {
      "date-parts": [
        [
          1988,
          12
        ]
      ]
    }
  },
  "alternative-id": [
    "0167931788900226"
  ],
  "URL": "http://dx.doi.org/10.1016/0167-9317(88)90022-6",
  "relation": {},
  "ISSN": [
    "0167-9317"
  ],
  "subject": [],
  "container-title-short": "Microelectronic Engineering",
  "published": {
    "date-parts": [
      [
        1988,
        12
      ]
    ]
  }
}