DOI: 10.1016/0167-577x(87)90047-4. Large spontaneous nucleation rate in implanted polycrystalline silicon films on SiO2

Large spontaneous nucleation rate in implanted polycrystalline silicon films on SiO2

10.1016/0167-577x(87)90047-4

Crossref journal-article

Elsevier BV

Materials Letters (78)

Bibliography

Iverson, R. B., & Reif, R. (1987). Large spontaneous nucleation rate in implanted polycrystalline silicon films on SiO2. Materials Letters, 5(10), 393â395.

Authors 2

R.B. Iverson (first)
R. Reif (additional)

References 16 Referenced 13

10.1049/el:19810413 / Electron. Letters by Reif (1981)
10.1063/1.328658 / J. Appl. Phys. by Komem (1981)
{'key': '10.1016/0167-577X(87)90047-4_BIB3', 'first-page': '543', 'volume': '27', 'author': 'Iverson', 'year': '1984'} by Iverson (1984)
10.1143/JJAP.25.L291 / Japan. J. Appl. Phys. by Ohshima (1986)
{'key': '10.1016/0167-577X(87)90047-4_BIB5', 'volume': '135', 'author': 'Noguchi', 'year': '1987', 'journal-title': 'J. Electrochem. Soc.'} / J. Electrochem. Soc. by Noguchi (1987)
10.1063/1.335251 / J. Appl. Phys. by Iverson (1985)
10.1063/1.336344 / J. Appl. Phys. by Kung (1986)
{'key': '10.1016/0167-577X(87)90047-4_BIB8', 'first-page': '416', 'volume': '135', 'author': 'Johnson', 'year': '1939', 'journal-title': 'Trans. Am. Inst. Min. (Metall.) Engrs.'} / Trans. Am. Inst. Min. (Metall.) Engrs. by Johnson (1939)
10.1063/1.1750380 / J. Chem. Phys. by Avrami (1939)
10.1063/1.1750631 / J. Chem. Phys. by Avrami (1940)
10.1063/1.1750872 / J. Chem. Phys. by Avrami (1941)
10.1002/pssa.2210480207 / Phys. Stat. Sol. by Koster (1978)
10.1063/1.325856 / J. Appl. Phys. by Zellama (1979)
10.1016/0022-3093(72)90006-3 / J. Non-Cryst. Solids by Blum (1972)
R.B. Iverson and R. Reif, to be published.
10.1063/1.325397 / J. Appl. Phys. by Csepregi (1978)

Dates

Type	When
Created	22 years, 2 months ago (June 20, 2003, 8:22 p.m.)
Deposited	6 years, 5 months ago (March 19, 2019, 11:23 a.m.)
Indexed	1 year, 3 months ago (May 14, 2024, 9:19 p.m.)
Issued	38 years ago (Sept. 1, 1987)
Published	38 years ago (Sept. 1, 1987)
Published Print	38 years ago (Sept. 1, 1987)

Funders 0

None

BibTeX

@article{Iverson_1987, title={Large spontaneous nucleation rate in implanted polycrystalline silicon films on SiO2}, volume={5}, ISSN={0167-577X}, url={http://dx.doi.org/10.1016/0167-577x(87)90047-4}, DOI={10.1016/0167-577x(87)90047-4}, number={10}, journal={Materials Letters}, publisher={Elsevier BV}, author={Iverson, R.B. and Reif, R.}, year={1987}, month=sep, pages={393–395} }

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