DOI: 10.1016/0167-577x(84)90111-3. Interface structure of GaAs/AlAs semiconductor superlattices prepared by MOCVD

Interface structure of GaAs/AlAs semiconductor superlattices prepared by MOCVD

10.1016/0167-577x(84)90111-3

Crossref journal-article

Elsevier BV

Materials Letters (78)

Bibliography

Jeng, S. J., Wayman, C. M., Costrini, G., & Coleman, J. J. (1984). Interface structure of GaAs/AlAs semiconductor superlattices prepared by MOCVD. Materials Letters, 2(5), 359â361.

Authors 4

S.J. Jeng (first)
C.M. Wayman (additional)
G. Costrini (additional)
J.J. Coleman (additional)

References 8 Referenced 15

{'key': '10.1016/0167-577X(84)90111-3_BIB1', 'series-title': 'Semiconductor Device with Superlattice Region', 'author': 'Esaki', 'year': '1971'} / Semiconductor Device with Superlattice Region by Esaki (1971)
10.1109/JQE.1980.1070447 / IEEE J. Quantum Electron. by Holonyak (1980)
10.1016/0022-0248(81)90289-X / J. Crystal Growth by Coleman (1981)
10.1146/annurev.ms.12.080182.001331 / Ann. Rev. Mat. Sci. by Dapkus (1982)
10.1016/B978-0-12-341824-1.50007-0 / Treatise Mat. Sci. Technol. by Gossard (1982)
{'key': '10.1016/0167-577X(84)90111-3_BIB6', 'series-title': 'Proceedings of the 25th Annual Meeting of EMAG', 'first-page': '290', 'author': 'Pettit', 'year': '1971'} / Proceedings of the 25th Annual Meeting of EMAG by Pettit (1971)
{'key': '10.1016/0167-577X(84)90111-3_BIB7', 'first-page': '216', 'volume': 'A198', 'author': 'Frank', 'year': '1949'} by Frank (1949)
10.1016/0022-0248(78)90321-4 / J. Crystal Growth by Petroff (1978)

Dates

Type	When
Created	22 years, 2 months ago (June 21, 2003, 12:22 a.m.)
Deposited	6 years, 5 months ago (March 19, 2019, 2:51 p.m.)
Indexed	1 year, 1 month ago (July 5, 2024, 12:41 a.m.)
Issued	41 years, 3 months ago (June 1, 1984)
Published	41 years, 3 months ago (June 1, 1984)
Published Print	41 years, 3 months ago (June 1, 1984)

Funders 0

None

BibTeX

@article{Jeng_1984, title={Interface structure of GaAs/AlAs semiconductor superlattices prepared by MOCVD}, volume={2}, ISSN={0167-577X}, url={http://dx.doi.org/10.1016/0167-577x(84)90111-3}, DOI={10.1016/0167-577x(84)90111-3}, number={5}, journal={Materials Letters}, publisher={Elsevier BV}, author={Jeng, S.J. and Wayman, C.M. and Costrini, G. and Coleman, J.J.}, year={1984}, month=jun, pages={359–361} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2024,
        7,
        5
      ]
    ],
    "date-time": "2024-07-05T04:41:21Z",
    "timestamp": 1720154481793
  },
  "reference-count": 8,
  "publisher": "Elsevier BV",
  "issue": "5",
  "license": [
    {
      "start": {
        "date-parts": [
          [
            1984,
            6,
            1
          ]
        ],
        "date-time": "1984-06-01T00:00:00Z",
        "timestamp": 454896000000
      },
      "content-version": "tdm",
      "delay-in-days": 0,
      "URL": "https://www.elsevier.com/tdm/userlicense/1.0/"
    }
  ],
  "content-domain": {
    "domain": [],
    "crossmark-restriction": false
  },
  "published-print": {
    "date-parts": [
      [
        1984,
        6
      ]
    ]
  },
  "DOI": "10.1016/0167-577x(84)90111-3",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2003,
        6,
        21
      ]
    ],
    "date-time": "2003-06-21T04:22:55Z",
    "timestamp": 1056169375000
  },
  "page": "359-361",
  "source": "Crossref",
  "is-referenced-by-count": 15,
  "special_numbering": "PA",
  "title": "Interface structure of GaAs/AlAs semiconductor superlattices prepared by MOCVD",
  "prefix": "10.1016",
  "volume": "2",
  "author": [
    {
      "given": "S.J.",
      "family": "Jeng",
      "sequence": "first",
      "affiliation": []
    },
    {
      "given": "C.M.",
      "family": "Wayman",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "G.",
      "family": "Costrini",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "J.J.",
      "family": "Coleman",
      "sequence": "additional",
      "affiliation": []
    }
  ],
  "member": "78",
  "reference": [
    {
      "key": "10.1016/0167-577X(84)90111-3_BIB1",
      "series-title": "Semiconductor Device with Superlattice Region",
      "author": "Esaki",
      "year": "1971"
    },
    {
      "key": "10.1016/0167-577X(84)90111-3_BIB2",
      "doi-asserted-by": "crossref",
      "first-page": "170",
      "DOI": "10.1109/JQE.1980.1070447",
      "volume": "QE-16",
      "author": "Holonyak",
      "year": "1980",
      "journal-title": "IEEE J. Quantum Electron."
    },
    {
      "key": "10.1016/0167-577X(84)90111-3_BIB3",
      "doi-asserted-by": "crossref",
      "first-page": "241",
      "DOI": "10.1016/0022-0248(81)90289-X",
      "volume": "55",
      "author": "Coleman",
      "year": "1981",
      "journal-title": "J. Crystal Growth"
    },
    {
      "key": "10.1016/0167-577X(84)90111-3_BIB4",
      "doi-asserted-by": "crossref",
      "first-page": "243",
      "DOI": "10.1146/annurev.ms.12.080182.001331",
      "volume": "12",
      "author": "Dapkus",
      "year": "1982",
      "journal-title": "Ann. Rev. Mat. Sci."
    },
    {
      "key": "10.1016/0167-577X(84)90111-3_BIB5",
      "doi-asserted-by": "crossref",
      "first-page": "13",
      "DOI": "10.1016/B978-0-12-341824-1.50007-0",
      "volume": "24",
      "author": "Gossard",
      "year": "1982",
      "journal-title": "Treatise Mat. Sci. Technol."
    },
    {
      "key": "10.1016/0167-577X(84)90111-3_BIB6",
      "series-title": "Proceedings of the 25th Annual Meeting of EMAG",
      "first-page": "290",
      "author": "Pettit",
      "year": "1971"
    },
    {
      "key": "10.1016/0167-577X(84)90111-3_BIB7",
      "first-page": "216",
      "volume": "A198",
      "author": "Frank",
      "year": "1949"
    },
    {
      "key": "10.1016/0167-577X(84)90111-3_BIB8",
      "doi-asserted-by": "crossref",
      "first-page": "5",
      "DOI": "10.1016/0022-0248(78)90321-4",
      "volume": "44",
      "author": "Petroff",
      "year": "1978",
      "journal-title": "J. Crystal Growth"
    }
  ],
  "container-title": "Materials Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://api.elsevier.com/content/article/PII:0167577X84901113?httpAccept=text/xml",
      "content-type": "text/xml",
      "content-version": "vor",
      "intended-application": "text-mining"
    },
    {
      "URL": "https://api.elsevier.com/content/article/PII:0167577X84901113?httpAccept=text/plain",
      "content-type": "text/plain",
      "content-version": "vor",
      "intended-application": "text-mining"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2019,
        3,
        19
      ]
    ],
    "date-time": "2019-03-19T18:51:11Z",
    "timestamp": 1553021471000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://linkinghub.elsevier.com/retrieve/pii/0167577X84901113"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1984,
        6
      ]
    ]
  },
  "references-count": 8,
  "journal-issue": {
    "issue": "5",
    "published-print": {
      "date-parts": [
        [
          1984,
          6
        ]
      ]
    }
  },
  "alternative-id": [
    "0167577X84901113"
  ],
  "URL": "http://dx.doi.org/10.1016/0167-577X(84)90111-3",
  "relation": {},
  "ISSN": [
    "0167-577X"
  ],
  "subject": [],
  "container-title-short": "Materials Letters",
  "published": {
    "date-parts": [
      [
        1984,
        6
      ]
    ]
  }
}