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Computers & Chemical Engineering (78)
Bibliography

Badgwell, T. A., Breedijk, T., Bushman, S. G., Butler, S. W., Chatterjee, S., Edgar, T. F., Toprac, A. J., & Trachtenberg, I. (1995). Modeling and control of microelectronics materials processing. Computers & Chemical Engineering, 19(1), 1–41.

Authors 8
  1. T.A. Badgwell (first)
  2. T. Breedijk (additional)
  3. S.G. Bushman (additional)
  4. S.W. Butler (additional)
  5. S. Chatterjee (additional)
  6. T.F. Edgar (additional)
  7. A.J. Toprac (additional)
  8. I. Trachtenberg (additional)
References 238 Referenced 40
  1. 10.1149/1.2108401 / J. Electrochem. Soc. / The plasma etching of polysilicon with CF3Cl/Ar discharges: parametric modeling and impedance analysis by Allen (1986)
  2. 10.1149/1.2108401 / J. Electrochem. Soc. / The plasma etching of polysilicon with CF3Cl/Ar discharges: Modeling of ion bombardment energy distributions by Allen (1986)
  3. 10.1149/1.2108402 / J. Electrochem. Soc. / The plasma etching of polysilicon with CF3C1/Ar discharges: Modeling of etching rate and directionality by Allen (1986)
  4. {'key': '10.1016/0098-1354(94)E0038-O_BIB4', 'article-title': 'Modelling, optimization, and control of the selective plasma etching of silicon and silicon dioxide', 'author': 'Allred', 'year': '1991'} / Modelling, optimization, and control of the selective plasma etching of silicon and silicon dioxide by Allred (1991)
  5. {'key': '10.1016/0098-1354(94)E0038-O_BIB5', 'article-title': 'Etch tailoring through flexible end-point detection', 'author': 'Angell', 'year': '1990', 'journal-title': 'SPIE Vo. 1392, 543 Advanced Techniques for Integrated Circuit Processing'} / SPIE Vo. 1392, 543 Advanced Techniques for Integrated Circuit Processing / Etch tailoring through flexible end-point detection by Angell (1990)
  6. 10.1063/1.104701 / Appl. Phys. Lett. / Grazing angle optical emission interferometry for endpoint detection by Angell (1991)
  7. 10.1109/66.149811 / IEEE Trans. Semicond. Manufact. / Rapid thermal processing uniformity using multivariable control of a circularly symmetric three zone lamp by Apte (1992)
  8. {'key': '10.1016/0098-1354(94)E0038-O_BIB8', 'first-page': '752', 'article-title': 'The application of control theory to the automation of I.C. manufacturing: progress and problems', 'author': 'Atherton', 'year': '1984', 'journal-title': 'Proc. Amer. Control Conf.'} / Proc. Amer. Control Conf. / The application of control theory to the automation of I.C. manufacturing: progress and problems by Atherton (1984)
  9. {'key': '10.1016/0098-1354(94)E0038-O_BIB9', 'article-title': 'Modeling of plasma etching reactors including wafer heating effects', 'author': 'Aydil', 'year': '1992'} / Modeling of plasma etching reactors including wafer heating effects by Aydil (1992)
  10. {'key': '10.1016/0098-1354(94)E0038-O_BIB10', 'article-title': 'Modeling and optimization of multiwafer low pressure chemical vapor deposition reactors', 'author': 'Badgwell', 'year': '1992'} / Modeling and optimization of multiwafer low pressure chemical vapor deposition reactors by Badgwell (1992)
  11. 10.1149/1.2069250 / J. Electrochem. Soc. / Experimental verification of a fundamental model for multiwafer LPCVD of polysilicon by Badgwell (1992)
  12. 10.1002/aic.690380613 / AIChE Jl / Modeling and scale-up of multiwafer LPCVD reactors by Badgwell (1992)
  13. 10.1109/66.210659 / IEEE Trans. Semicon. Manufact. / In situ measurement of wafer temperatures in a multiwafer LPCVD furnace by Badgwell (1993)
  14. 10.1149/1.2054678 / J. Electrochem. Soc. / Modeling the wafer temperature profile in a multiwafer LPCVD furnace by Badgwell (1994)
  15. 10.1149/1.2086989 / J. Electrochem. Soc. / A surface kinetic model for plasma polymerizatin with application to plasma etching by Bariya (1990)
  16. {'key': '10.1016/0098-1354(94)E0038-O_BIB16', 'first-page': '441', 'article-title': 'Use of scatterometry for resist process control', 'author': 'Bishop', 'year': '1992'} / Use of scatterometry for resist process control by Bishop (1992)
  17. {'key': '10.1016/0098-1354(94)E0038-O_BIB17', 'article-title': 'Application of adaptive equipment models to a photolithographic process', 'author': 'Bombay', 'year': '1991', 'journal-title': 'SPIE Process Integration'} / SPIE Process Integration / Application of adaptive equipment models to a photolithographic process by Bombay (1991)
  18. 10.1557/PROC-98-135 / Mat. Res. Soc. Symp. Proc. / Laser induced fluorescence and optical emission studies of fluorocarbon plasmas by Booth (1987)
  19. 10.1016/0959-1524(92)80012-M / J. Process Control / Adaptive control of a rapid thermal processor using two longrange predictive methods by Bordeneuve (1992)
  20. 10.1002/nme.1620300109 / Intl. J. Num. Methods Engng / Finite-element/Newton method for the analysis of Czochralski crystal growth with diffuse-grey radiative heat transfer by Bornside (1990)
  21. 10.1016/0022-0248(91)90260-C / J. Cryst. Growth / Minimization of thermoelastic stresses in Czochralski grown silicon by Bornside (1991)
  22. {'key': '10.1016/0098-1354(94)E0038-O_BIB22', 'article-title': 'Statistics for Experimenters: An Introduction to Design, Data', 'author': 'Box', 'year': '1978'} / Statistics for Experimenters: An Introduction to Design, Data by Box (1978)
  23. {'key': '10.1016/0098-1354(94)E0038-O_BIB23', 'author': 'Brauerle', 'year': '1986'} by Brauerle (1986)
  24. {'key': '10.1016/0098-1354(94)E0038-O_BIB24', 'article-title': 'A model predictive controller for multivariable temperature control in rapid thermal processing', 'volume': '2890', 'author': 'Breedijk', 'year': '1993', 'journal-title': 'Proc. Amer. Cont. Conf.'} / Proc. Amer. Cont. Conf. / A model predictive controller for multivariable temperature control in rapid thermal processing by Breedijk (1993)
  25. {'key': '10.1016/0098-1354(94)E0038-O_BIB25', 'year': '1993'} (1993)
  26. 10.1063/1.340982 / J. Appl. Phys. / Reactive sticking coefficients for silane and disilane on polycrystalline silicon by Buss (1986)
  27. {'key': '10.1016/0098-1354(94)E0038-O_BIB27', 'article-title': 'Etching and polymerization in fluorocarbonhydrogen plasmas: mathematical modeling and experimental investigation', 'author': 'Butler', 'year': '1990'} / Etching and polymerization in fluorocarbonhydrogen plasmas: mathematical modeling and experimental investigation by Butler (1990)
  28. 10.1149/1.2086044 / J. Electrochem. Soc. / Development of techniques for real-time monitoring and control in plasma etching: II. Multivariable control system analysis of manipulated, measured, and performance variables by Butler (1991)
  29. 10.1149/1.2086706 / J. Electrochem. Soc. / Programmed rate processing to increase throughput in LPCVD by Cale (1990)
  30. 10.1080/00986449308936116 / Chem. Engr. Commun / Step coverage predictions using combined reactor scale and feature scale models for blanket tungsten LPCVD by Cale (1993)
  31. {'key': '10.1016/0098-1354(94)E0038-O_BIB31', 'article-title': 'Gas flow patterns and thermal uniformity in rapid thermal processing equipment', 'volume': '921', 'author': 'Campbell', 'year': '1990', 'journal-title': 'IEDM Tech. Dig.'} / IEDM Tech. Dig. / Gas flow patterns and thermal uniformity in rapid thermal processing equipment by Campbell (1990)
  32. 10.1109/66.75859 / IEEE Trans. Semicond. Manufact. / Steady-state thermal uniformity and gas flow patterns in a rapid thermal processing chamber by Campbell (1991)
  33. 10.1117/12.56640 / SPIE Proc. on Process Model Metrology, Control and Clustering / Application of artificial neural networks to real-time control of plasma processes by Camporese (1991)
  34. 10.1002/aic.690360711 / AIChE Jl / On-line state and parameter identification of positive photoresist development by Carroll (1990)
  35. 10.1117/12.20075 / SPIE Proc. Integrated Circuit Metrology, Inspection and Process Control IV / On-line state and model parameter identification of the positive optical photoresist development process by Carroll (1990)
  36. 10.1117/12.44437 / SPIE Proc. Integrated Circuit Metrology, Inspection and Process, Control / Optimal control of positive optical photoresist development by Carroll (1991)
  37. 10.1016/0009-2509(75)80031-5 / Chem. Engng Sci. / Orthogonal collocation on finite elements by Carey (1975)
  38. {'key': '10.1016/0098-1354(94)E0038-O_BIB38', 'author': 'Chapman', 'year': '1980'} by Chapman (1980)
  39. Charlier J.P., Modeling of low-pressure chemical vapor deposition, IEEE Trans. Electron. Dev., ED-28, pp. 501. (10.1109/T-ED.1981.20373)
  40. 10.1149/1.2069144 / J. Electrochem. Soc. / Modeling of a single wafer rapid thermal reactor by Chatterjee (1992)
  41. {'key': '10.1016/0098-1354(94)E0038-O_BIB41', 'first-page': '386', 'article-title': 'Modeling and control of RTCVD of polysilicon', 'author': 'Chatterjee', 'year': '1993', 'journal-title': 'RTP Conf.'} / RTP Conf. / Modeling and control of RTCVD of polysilicon by Chatterjee (1993)
  42. {'key': '10.1016/0098-1354(94)E0038-O_BIB42', 'article-title': 'A contribution to optimal lamp design in rapid thermal processing', 'author': 'Cho', 'year': '1992', 'journal-title': 'SPIE Conf. on Rapid Thermal and Integrated Processing'} / SPIE Conf. on Rapid Thermal and Integrated Processing / A contribution to optimal lamp design in rapid thermal processing by Cho (1992)
  43. 10.1016/0022-0248(82)90481-X / J. Cryst. Growth / The deposition of silicon from silane in a low-pressure hot-wall system by Claassen (1982)
  44. 10.1063/1.328060 / J. Appl. Phys. / Optical emission spectroscopy of reactive plasmas: a method for correlating emission intensifies to reactive particle density by Coburn (1980)
  45. {'key': '10.1016/0098-1354(94)E0038-O_BIB45', 'article-title': 'Computer modeling of plasma processing and equipment for microelectronic applications', 'author': 'Colter', 'year': '1989'} / Computer modeling of plasma processing and equipment for microelectronic applications by Colter (1989)
  46. 10.1149/1.2115598 / J. Electrochem. Soc. / A mathematical model of the coupled fluid mechanics and chemical kinetics in a chemical vapor deposition reactor by Coltrin (1984)
  47. 10.1149/1.2108820 / J. Electrochem. Soc. / A mathematical model of silicon chemical vapor deposition by Coltrin (1986)
  48. 10.1149/1.2096750 / J. Electrochem. Soc. / A mathematical model of the fluid mechanics and gas-phase chemistry in a rotating disk chemical vapor deposition reactor by Coltrin (1989)
  49. 10.1149/1.2221213 / J. Electrochem. Soc. / Analysis of transition regime flows in low pressure CVD reactors using the direct simulation Monte-Carlo method by Coronell (1992)
  50. 10.1007/BF00712813 / J. Computer-Aided Mat. Des. / Monte-Carlo simulations of very low pressure chemical vapor deposition by Coronell (1993)
  51. 10.1149/1.2054753 / J. Electrochem. Soc. / A Monte-Carlo simulation of radiation heat transfer in the multiwafer LPCVD reactor by Coronell (1994)
  52. 10.1063/1.348597 / J. Appl. Phys. / Chamber material effects on actinometric measurements in RF glow discharges by Cotler (1991)
  53. 10.1002/aic.690380102 / AIChE Jl / Adaptive control of photolithography by Crisalle (1992)
  54. {'key': '10.1016/0098-1354(94)E0038-O_BIB54', 'first-page': '18', 'article-title': 'Polysilocon Technology in Semiconductor Silicon', 'author': 'Crossman', 'year': '1977'} / Polysilocon Technology in Semiconductor Silicon by Crossman (1977)
  55. 10.1007/BF00566839 / Plasma Chem. Plasma Proc. / Optimal emission spectroscopy and actinometry in CCl4-Cl2 radio frequency discharges by d'Agostino (1984)
  56. 10.1149/1.2086605 / J. Electrochem. Soc. / Combined experimental and modeling study of spatial effects in plasma etching: CF4/O2 etching of silicon by Dalvie (1990)
  57. 10.1016/0009-2509(86)87142-1 / Chem. Engng Sci. / Modelling of reactors for plasma processing: I. Silicon etching by CF4 in a radial flow reactor by Dalvie (1986)
  58. {'key': '10.1016/0098-1354(94)E0038-O_BIB58', 'article-title': 'Modeling and advanced control of IC production furnaces', 'author': 'De', 'year': '1992', 'journal-title': 'Proc. 7th Int. Symp on Temperature Measurement'} / Proc. 7th Int. Symp on Temperature Measurement / Modeling and advanced control of IC production furnaces by De (1992)
  59. 10.1117/12.940402 / Lasers in Microlithography / Quantification of laser interference fringes as applied to plasma etch endpoint detection by Deaton (1990)
  60. 10.1117/12.48929 / SPIE Advanced Techniques for Integrated Circuit Processing / Application of adaptive network theory to dry etch monitoring and control by Deshmukh (1990)
  61. {'key': '10.1016/0098-1354(94)E0038-O_BIB61', 'article-title': 'Adaptive process control for a rapid thermal processor', 'author': 'Dilhac', 'year': '1990', 'journal-title': 'SPIE Proc. Rapid Thermal and Related Processing Techniques'} / SPIE Proc. Rapid Thermal and Related Processing Techniques / Adaptive process control for a rapid thermal processor by Dilhac (1990)
  62. 10.1109/T-ED.1975.18161 / IEEE Trans. Electron Dev. / Modeling projection printing of positive photoresists by Dill (1975)
  63. 10.1149/1.2095434 / J. Electrochem. Soc. / A mathematical model for a parallel plate plasma etching reactor by Economou (1988)
  64. 10.1149/1.2096584 / J. Electrochem. Soc. / Uniformity of etching in parallel plate plasma reactors by Economou (1989)
  65. 10.1063/1.334108 / J. Appl. Phys. / Computer simulation of a CF4 plasma etching silicon by Edelson (1984)
  66. 10.23919/ACC.1993.4793451 / Proc. 1993 Amer. Control Conf. / Applications of control to semiconductor manufacturing: reactive ion etching by Elta (1993)
  67. {'key': '10.1016/0098-1354(94)E0038-O_BIB67', 'article-title': 'Develop ·smart” controllers for semiconductor processes', 'volume': '69', 'author': 'Elta', 'year': '1993', 'journal-title': 'R&D Mag.'} / R&D Mag. / Develop ·smart” controllers for semiconductor processes by Elta (1993)
  68. 10.1149/1.2407685 / J. Electrochem. Soc. / A stagnant layer model for the epitaxial growth of silicon from silane in a horizontal reactor by Eversteyn (1970)
  69. 10.1116/1.585090 / J. Vac. Sci. Technol B / Modeling and simulation of a deep ultraviolet acid hardening resist by Ferguson (1990)
  70. {'key': '10.1016/0098-1354(94)E0038-O_BIB70', 'article-title': 'Modeling and simulation of reaction kinetics in advanced resist processes for optical lithography', 'author': 'Ferguson', 'year': '1991'} / Modeling and simulation of reaction kinetics in advanced resist processes for optical lithography by Ferguson (1991)
  71. {'key': '10.1016/0098-1354(94)E0038-O_BIB71', 'article-title': 'A general approach to the modeling and simulation of advanced deep-UV resists', 'author': 'Ferguson', 'year': '1990', 'journal-title': "TECHCON '90"} / TECHCON '90 / A general approach to the modeling and simulation of advanced deep-UV resists by Ferguson (1990)
  72. 10.1149/1.2086913 / J. Electrochem. Soc. / Spectroscopic ellipsometry for the characterization of thin films by Ferrieu (1990)
  73. {'key': '10.1016/0098-1354(94)E0038-O_BIB73', 'first-page': '138', 'article-title': 'Introduction to plasma chemistry', 'author': 'Flamm', 'year': '1989'} / Introduction to plasma chemistry by Flamm (1989)
  74. 10.1149/1.2123673 / J. Electrochem. Soc. / Multiple-etchant loading effect and silicon etching in CIF3 and related mixtures by Flamm (1982)
  75. {'key': '10.1016/0098-1354(94)E0038-O_BIB75', 'first-page': '1', 'article-title': 'Plasma etching technology—an overview', 'author': 'Flamm', 'year': '1988'} / Plasma etching technology—an overview by Flamm (1988)
  76. 10.1016/0042-207X(90)90001-F / Vaccum / Application of dynamic in situ ellipsometry and quadrupole mass spectrometry to plasma-assisted etching: polymer formation and removal by Flowers (1990)
  77. 10.1149/1.2086183 / J. Electrochem. Soc. / Reaction and transport of multiple species during plasma etching by Folta (1990)
  78. {'key': '10.1016/0098-1354(94)E0038-O_BIB78', 'first-page': '1160', 'article-title': 'A quantitative calculation of the growth rate of epitaxial silicon front SiCl4 in a barrel reactor', 'volume': '119', 'author': 'Fuji', 'year': '1972', 'journal-title': 'J. Electrochem. Soc.'} / J. Electrochem. Soc. / A quantitative calculation of the growth rate of epitaxial silicon front SiCl4 in a barrel reactor by Fuji (1972)
  79. {'key': '10.1016/0098-1354(94)E0038-O_BIB79', 'author': 'Ghandi', 'year': '1983'} by Ghandi (1983)
  80. 10.1002/aic.690350102 / AIChE Jl / Plasma processing in microelectronics manufacturing by Graves (1989)
  81. {'key': '10.1016/0098-1354(94)E0038-O_BIB81', 'author': 'Grcar', 'year': '1992'} by Grcar (1992)
  82. {'key': '10.1016/0098-1354(94)E0038-O_BIB82', 'article-title': 'The GEC RF reference cell: diagnostic techniques and initial results', 'volume': '3', 'author': 'Greenberg', 'year': '1991'} / The GEC RF reference cell: diagnostic techniques and initial results by Greenberg (1991)
  83. 10.1109/66.24929 / IEEE Trans. Semicond. Manufact. / Process optimization tweaking tool (POTT) and its application in controlling oxidation thickness by Guldi (1989)
  84. 10.1109/66.75858 / IEEE Trans. on Semicond. Manufact. / A model for rapid thermal processing: achieving uniformity through lamp control by Gyurcsik (1991)
  85. {'key': '10.1016/0098-1354(94)E0038-O_BIB85', 'article-title': 'Model-based control of rapid thermal processing systems', 'author': 'Gyugyi', 'year': '1992', 'journal-title': 'Proc. 1992 IEEE Conf. on Control Applications'} / Proc. 1992 IEEE Conf. on Control Applications / Model-based control of rapid thermal processing systems by Gyugyi (1992)
  86. {'key': '10.1016/0098-1354(94)E0038-O_BIB86', 'article-title': 'Interferometric monitoring and control of silicon incorporation in the diffusion enhanced silylated resist process', 'author': 'Hanratty', 'year': '1991', 'journal-title': 'SPIE Process Integration'} / SPIE Process Integration / Interferometric monitoring and control of silicon incorporation in the diffusion enhanced silylated resist process by Hanratty (1991)
  87. 10.1116/1.584779 / J. Vac. Sci. Technol. B / In situ ellipsometry during plasma etching of SiO2 films on Si by Haverlag (1989)
  88. 10.1116/1.577881 / J. Vac. Sci. Technol. A / In situ real-time ellipsometry for film thickness measurement and control by Henck (1992)
  89. 10.1016/B978-0-12-234116-8.50007-1 / Lumped parameter model for optical lithography by Hershal (1987)
  90. 10.1515/REVCE.1985.3.2.97 / Rev. Chem. Engng / Chemical vapor deposition: a chemical engineering persopective by Hess (1985)
  91. {'key': '10.1016/0098-1354(94)E0038-O_BIB91', 'article-title': 'Analysis of temperature distribution in rows of semiconductor wafers at insertion into a difusion furnace', 'author': 'Hirasawa', 'year': '1989', 'journal-title': 'Proc. 1989 National Heat Transfer Conf.'} / Proc. 1989 National Heat Transfer Conf. / Analysis of temperature distribution in rows of semiconductor wafers at insertion into a difusion furnace by Hirasawa (1989)
  92. {'key': '10.1016/0098-1354(94)E0038-O_BIB92', 'first-page': '159', 'article-title': 'Chemical vapor deposition at low pressures', 'author': 'Hitchman', 'year': '1993'} / Chemical vapor deposition at low pressures by Hitchman (1993)
  93. 10.1016/0022-0248(81)90106-8 / J. Cryst. Growth / Semi-insulating polysilicon (SIPOS) deposition in a low pressure CVD reactor by Hitchman (1981)
  94. 10.1016/0040-6090(79)90296-7 / Thin Solid Films / Polysilicon growth kinetics in a low pressure chemical vapour deposition reactor by Hitchman (1979)
  95. {'key': '10.1016/0098-1354(94)E0038-O_BIB95', 'first-page': '90', 'article-title': 'Supervisory control for semiconductor processing', 'author': 'Hoerger', 'year': '1990', 'journal-title': 'Proc. Amer. Cont. Conf.'} / Proc. Amer. Cont. Conf. / Supervisory control for semiconductor processing by Hoerger (1990)
  96. 10.1016/0921-5107(93)90100-2 / Mater. Sci. Engng / A model for low pressure chemical vapor deposition in a hot-wall tubular reactor by Houf (1993)
  97. {'key': '10.1016/0098-1354(94)E0038-O_BIB97', 'article-title': 'Control Issues in Lithography', 'author': 'Hosch', 'year': '1993'} / Control Issues in Lithography by Hosch (1993)
  98. 10.1063/1.1657208 / J. Appl. Phys. / Temperature distribution and stress in circular wafers in a row during radiative cooling by Hu (1969)
  99. 10.1109/T-ED.1979.19474 / IEEE Trans. Electron. Dev. / Modeling of low-pressure deposition of SiO2 by decomposition of TEOS by Huppertz (1979)
  100. 10.1116/1.586286 / J. Vac. Sci. Technol. B / Three-dimensional analysis for contrast enhancement lithography by a three-dimensinal photolithography simulator by Ito (1992)
  101. 10.1116/1.575712 / J. Vac. Sci. Technol. A / Transient fluorocarbon film thickness effects near the silicon dioxide/silicon interface in selective silicon dioxide reactive ion etching by Jaso (1988)
  102. 10.1149/1.2115441 / J. Electrochem. Soc. / Thermal diffusion effects in chemical vapor deposition reactors by Jenkinson (1984)
  103. {'key': '10.1016/0098-1354(94)E0038-O_BIB103', 'first-page': '623', 'article-title': 'Control problems in microelectronics processing', 'author': 'Jensen', 'year': '1986', 'journal-title': 'Chemical Process Control III'} / Chemical Process Control III / Control problems in microelectronics processing by Jensen (1986)
  104. 10.1016/0009-2509(87)80052-0 / Chem. Engng Sci. / Micro-reaction engineering applications of reaction engineering to processing of electronic and photonic materials by Jensen (1987)
  105. {'key': '10.1016/0098-1354(94)E0038-O_BIB105', 'first-page': '31', 'article-title': 'Fundamentals of chemical vapor deposition', 'author': 'Jensen', 'year': '1993'} / Fundamentals of chemical vapor deposition by Jensen (1993)
  106. {'key': '10.1016/0098-1354(94)E0038-O_BIB106', 'article-title': 'Transport phenomena in epitaxy systems', 'volume': '3', 'author': 'Jensen', 'year': '1994'} / Transport phenomena in epitaxy systems by Jensen (1994)
  107. 10.1149/1.2120129 / J. Electrochem. Soc. / Modeling and analysis of low pressure CVD reactors by Jensen (1983)
  108. {'key': '10.1016/0098-1354(94)E0038-O_BIB108', 'first-page': '283', 'article-title': 'Thermal chemical vapor deposition', 'author': 'Jensen', 'year': '1991'} / Thermal chemical vapor deposition by Jensen (1991)
  109. 10.1002/pen.760170610 / Polymer Engng Sci. / Line-profile resist development simulation techniques by Jewett (1977)
  110. 10.1149/1.2100352 / J. Electrochem. Soc. / Modeling of LPCVD reactors. Effect of empty inlet tube by Joshi (1987)
  111. {'key': '10.1016/0098-1354(94)E0038-O_BIB111', 'first-page': '763', 'article-title': 'Computer aided control of the integrated circuit manufacturing process', 'author': 'Kaempf', 'year': '1984', 'journal-title': 'Proc. Amer. Cont. Conf.'} / Proc. Amer. Cont. Conf. / Computer aided control of the integrated circuit manufacturing process by Kaempf (1984)
  112. 10.1007/BF00343409 / Appl. Phys. A / Modeling of wafer heating during rapid thermal processing by Kakoschke (1990)
  113. 10.1149/1.2123504 / J. Electrochem. Soc. / Properties of plasma-enhanced CVD silicon films by Kamins (1982)
  114. 10.1149/1.2115598 / J. Electrochem. Soc. / A mathematical model of the coupled fluid mechanics and chemical kinetics in a chemical vapor deposition reactor by Kee (1984)
  115. 10.1149/1.2085948 / J. Electrochem. Soc. / A mathematical model of the hydrodynamics and gas-phase reactions in silicon LPCVD in a single wafer reactor by Kleijn (1991)
  116. 10.1149/1.2096465 / J. Electrochem. Soc. / A mathematical model for LPCVD in a single wafer reactor by Kleijn (1989)
  117. 10.1557/PROC-224-203 / Mater. Res. Soc. Proc. / Thermal effects of gases in rapid thermal processing by Knutson (1991)
  118. 10.1016/0022-0248(90)90409-E / J. Cryst. Growth / Numerical simulation of the interface inversion in Czochralski growth of oxide crystals by Kopetsch (1990)
  119. {'key': '10.1016/0098-1354(94)E0038-O_BIB119', 'first-page': '221', 'article-title': 'Float-zoning of semiconductor silicon: a perspective', 'author': 'Kramer', 'year': '1983', 'journal-title': 'Solid State Technol.'} / Solid State Technol. / Float-zoning of semiconductor silicon: a perspective by Kramer (1983)
  120. {'key': '10.1016/0098-1354(94)E0038-O_BIB120', 'first-page': '369', 'article-title': 'Organometallic vapor phase epitaxy', 'author': 'Kuech', 'year': '1991'} / Organometallic vapor phase epitaxy by Kuech (1991)
  121. 10.1149/1.2123495 / J. Electrochem. Soc. / Modeling of low-pressure CVD process by Kuiper (1982)
  122. 10.1063/1.331074 / J. Appl. Phys. / A kinetic study of the plasma-etching process: I. A model for the etching of Si and SiO2 in CnFm/H2 and CnFm/O2 plasmas by Kushner (1982)
  123. 10.1016/0022-0248(91)90383-G / J. Cryst. Growth / Heat transfer, fluid flow and iterface shapes in floating-zone crystal growth by Lan (1991)
  124. {'key': '10.1016/0098-1354(94)E0038-O_BIB124', 'first-page': '673', 'article-title': 'The microelectronic factory of the future', 'author': 'Larrabee', 'year': '1991'} / The microelectronic factory of the future by Larrabee (1991)
  125. {'key': '10.1016/0098-1354(94)E0038-O_BIB125', 'article-title': 'Statistically based feedback control of photoresist application', 'author': 'Leang', 'year': '1991', 'journal-title': 'Proc. of ASM'} / Proc. of ASM / Statistically based feedback control of photoresist application by Leang (1991)
  126. {'key': '10.1016/0098-1354(94)E0038-O_BIB126', 'first-page': '132', 'article-title': 'Modeling of the reaction for low pressure chemical vapor deposition of silicon oxide', 'volume': '130', 'author': 'Learn', 'year': '1985', 'journal-title': 'J. Electrochem. Soc.'} / J. Electrochem. Soc. / Modeling of the reaction for low pressure chemical vapor deposition of silicon oxide by Learn (1985)
  127. {'key': '10.1016/0098-1354(94)E0038-O_BIB127', 'author': 'Lee', 'year': '1990'} by Lee (1990)
  128. 10.1149/1.2086279 / J. Electrochem. Soc. / Plasma etching of silicon in SF6: experimental and reactor modeling studies by Lii (1990)
  129. 10.1364/JOSA.62.000976 / J. Opt. Soc. Am. / Electromagnetic near-field diffraction of a medium slit by Lin (1972)
  130. 10.1109/T-ED.1980.19959 / IEEE Trans. Electron Dev. / Partially coherent imaging in two dimensions and the theoretical limits of projection printing in micro-fabrication by Lin (1980)
  131. {'key': '10.1016/0098-1354(94)E0038-O_BIB131', 'first-page': '155', 'article-title': 'A novel approach for film reflectance measurement and its application for the control of a photolithographic workcell', 'author': 'Ling', 'year': '1991'} / A novel approach for film reflectance measurement and its application for the control of a photolithographic workcell by Ling (1991)
  132. 10.1116/1.1492640 / J. Vac. Sci. Tech. / Electrical characterization of radio-frequency sputtering gas discharge by Logan (1969)
  133. {'key': '10.1016/0098-1354(94)E0038-O_BIB133', 'first-page': '2', 'article-title': 'Rapid thermal processing of semiconductors 1963-1993. Where to from here?', 'author': 'Lojek', 'year': '1993', 'journal-title': "RTP'93 Conf."} / RTP'93 Conf. / Rapid thermal processing of semiconductors 1963-1993. Where to from here? by Lojek (1993)
  134. 10.1109/66.4383 / IEEE Trans. Semicond. Manufact. / Thermal and stress analysis of semiconductor wafers in a rapid thermal processing oven by Lord (1988)
  135. 10.1117/12.947767 / SPIE Opt. Microlithog. IV / PROLITH: a comprehensive optical lithography model by Mack (1985)
  136. 10.1149/1.2069382 / J. Electrochem. Soc. / New kinetic model for resist dissolution by Mack (1992)
  137. 10.1149/1.2133351 / J. Electrochem. Soc. / Analysis of transport processes in vertical cylinder epitaxy reactors by Manke (1977)
  138. {'key': '10.1016/0098-1354(94)E0038-O_BIB138', 'first-page': '267', 'article-title': 'Ellipsometry process monitoring and control in rapid thermal processing', 'author': 'Massoud', 'year': '1993', 'journal-title': 'RTP Conf.'} / RTP Conf. / Ellipsometry process monitoring and control in rapid thermal processing by Massoud (1993)
  139. {'key': '10.1016/0098-1354(94)E0038-O_BIB139', 'first-page': '405', 'article-title': 'Mathematical model of temperature distribution in wafers in a furnace for semiconductor fabrication processes', 'author': 'Matsuba', 'year': '1985', 'journal-title': 'Proc. 4th Int. Conf. on the Numerical Analysis of Semiconductor Devices and Integrated Circuits (NASECODE IV)'} / Proc. 4th Int. Conf. on the Numerical Analysis of Semiconductor Devices and Integrated Circuits (NASECODE IV) / Mathematical model of temperature distribution in wafers in a furnace for semiconductor fabrication processes by Matsuba (1985)
  140. {'key': '10.1016/0098-1354(94)E0038-O_BIB140', 'article-title': 'Lithography', 'author': 'McGillis', 'year': '1983'} / Lithography by McGillis (1983)
  141. 10.1149/1.2085677 / J. Electrochem. Soc. / Development of techniques for real-time monitoring and control in plasma etching: I by McLaughlin (1991)
  142. {'key': '10.1016/0098-1354(94)E0038-O_BIB142', 'first-page': '376', 'article-title': 'Strategies for modeling of rapid thermal processing systems', 'author': 'Merchant', 'year': '1993', 'journal-title': "RTP'93 Conf."} / RTP'93 Conf. / Strategies for modeling of rapid thermal processing systems by Merchant (1993)
  143. {'key': '10.1016/0098-1354(94)E0038-O_BIB143', 'article-title': 'In situ control of photoresist coating process', 'volume': '68', 'author': 'Metz', 'year': '1992', 'journal-title': 'Semicond. Int.'} / Semicond. Int. / In situ control of photoresist coating process by Metz (1992)
  144. 10.1149/1.2115715 / J. Electrochem. Soc. / Analysis of chemical vapor deposition of boron by Michaelidis (1984)
  145. 10.1149/1.2109055 / J. Electrochem. Soc. / A model of the effects of diffusion and convection on the rate and uniformity of deposition in a CVD reactor by Middleman (1986)
  146. 10.1117/12.59798 / Proc. of Integrated Circuit Metrology, Inspection, and Process Control VI, SPIE / Latent image exposure monitor using scatterometry by Milner (1992)
  147. 10.1117/12.48961 / SPIE, Advanced Techniques for Integrated Circuit Processing / Instantaneous etch rate measurement of thin transparent films by interferometry for use in an algorithm to control a plasma etcher by Mishurda (1990)
  148. 10.1016/0022-0248(86)90290-3 / J. Cryst. Growth / Complex flow phenomena in MOCVD reactors by Moffat (1986)
  149. 10.1149/1.2095638 / J. Electrochem. Soc. / Three-dimensional flow effects in silicon CVD in horizontal reactors by Moffat (1988)
  150. 10.1149/1.2133542 / J. Electrochem. Soc. / The loading effect in plasma etching by Mogab (1977)
  151. 10.1109/TCAD.1987.1270289 / IEEE Trans. Comput.-Aided Des. / A three-dimensional photoresist imaging process simulator for strong standing-wave effect environment by Moniwa (1987)
  152. 10.1109/66.44616 / IEEE Trans. Semicond. Manufact. / Process uniformity and slip dislocation patterns in linearly ramped-temperature transient rapid thermal processing of silicon by Moslehi (1989)
  153. {'key': '10.1016/0098-1354(94)E0038-O_BIB153', 'article-title': 'Advanced equipment and sensor technologies for rapid thermal processing', 'author': 'Moslehi', 'year': '1991'} / Advanced equipment and sensor technologies for rapid thermal processing by Moslehi (1991)
  154. 10.1109/16.108208 / IEEE Trans. Electron. Dev. / Single wafer integrated semiconductor device processing by Moslehi (1992)
  155. {'key': '10.1016/0098-1354(94)E0038-O_BIB155', 'article-title': 'Sensor fusion for ULSI manufacturing process coantrol', 'author': 'Moslehi', 'year': '1992', 'journal-title': 'VLSI Symp.'} / VLSI Symp. / Sensor fusion for ULSI manufacturing process coantrol by Moslehi (1992)
  156. {'key': '10.1016/0098-1354(94)E0038-O_BIB156', 'article-title': 'Microelectronics manufacturing science and technology (MMST): single-wafer RTP-Based 0.35 μm CMOS IC fabrication', 'author': 'Moslehi', 'year': '1993', 'journal-title': 'IEDM Conf.'} / IEDM Conf. / Microelectronics manufacturing science and technology (MMST): single-wafer RTP-Based 0.35 μm CMOS IC fabrication by Moslehi (1993)
  157. {'key': '10.1016/0098-1354(94)E0038-O_BIB157', 'first-page': '254', 'article-title': 'Determination of the MTF of positive photoresists using the Monte-Carlo method', 'volume': '27', 'author': 'Nakase', 'year': '1983', 'journal-title': 'Photogr. Sci. Engng'} / Photogr. Sci. Engng / Determination of the MTF of positive photoresists using the Monte-Carlo method by Nakase (1983)
  158. {'key': '10.1016/0098-1354(94)E0038-O_BIB158', 'article-title': 'Optimal multivariable control of wafer temperature in RTP systems', 'author': 'Norman', 'year': '1991', 'journal-title': 'IEEE Trans. on Semicond. Manufact.'} / IEEE Trans. on Semicond. Manufact. / Optimal multivariable control of wafer temperature in RTP systems by Norman (1991)
  159. 10.1109/16.108233 / IEEE Trans. Electron. Dev. / Optimization of wafer temperature uniformity in rapid thermal processing systems by Norman (1992)
  160. {'key': '10.1016/0098-1354(94)E0038-O_BIB160', 'author': 'Norman', 'year': '1992'} by Norman (1992)
  161. {'key': '10.1016/0098-1354(94)E0038-O_BIB161', 'first-page': '811', 'article-title': 'Multivariable feedback control of semiconductor wafer temperature', 'author': 'Norman', 'year': '1992', 'journal-title': 'Proc. Amer. Control. Conf.'} / Proc. Amer. Control. Conf. / Multivariable feedback control of semiconductor wafer temperature by Norman (1992)
  162. 10.1149/1.2096793 / J. Electrochem. Soc. / Performance of a new vertical LPCVD apparatus by Ogawa (1989)
  163. 10.1109/T-ED.1979.19482 / IEEE Trans. Electron Dev. / A general simulator for VLSI lithography and etching processes: part 1—applications to projection lithography by Oldham (1979)
  164. {'key': '10.1016/0098-1354(94)E0038-O_BIB164', 'author': 'Panton', 'year': '1984'} by Panton (1984)
  165. 10.1149/1.2086999 / J. Electrochem. Soc. / Numerical simulation of a single-wafer isothermal plasma etching reactor by Park (1990)
  166. 10.1149/1.2085815 / J. Electrochem. Soc. / A mathematical model for etching of silicon using CF4 in a radial flow plasma reactor by Park (1991)
  167. {'key': '10.1016/0098-1354(94)E0038-O_BIB167', 'first-page': '55', 'article-title': 'Crystal growth and wafer preparation', 'author': 'Pearce', 'year': '1988'} / Crystal growth and wafer preparation by Pearce (1988)
  168. {'key': '10.1016/0098-1354(94)E0038-O_BIB168', 'article-title': 'The hottest topic in RTP', 'author': 'Peters', 'year': '1991', 'journal-title': 'Semicond. Int.'} / Semicond. Int. / The hottest topic in RTP by Peters (1991)
  169. {'key': '10.1016/0098-1354(94)E0038-O_BIB169', 'article-title': 'Why you need RTP.', 'author': 'Peters', 'year': '1991', 'journal-title': 'Semicond. Int.'} / Semicond. Int. / Why you need RTP. by Peters (1991)
  170. {'key': '10.1016/0098-1354(94)E0038-O_BIB170', 'author': 'Peyton', 'year': '1992'} by Peyton (1992)
  171. {'key': '10.1016/0098-1354(94)E0038-O_BIB171', 'author': 'Petzold', 'year': '1982'} by Petzold (1982)
  172. 10.1007/BF00575129 / Plasma Chem. Plasma Proc. / A model of the chemical processes occurring in CF4/O2 discharges used in plasma etching by Plumb (1986)
  173. 10.1149/1.2129743 / J. Electrochem. Soc. / Silicon deposition on a rotating disk by Pollard (1980)
  174. {'key': '10.1016/0098-1354(94)E0038-O_BIB174', 'author': 'Proud', 'year': '1991'} by Proud (1991)
  175. {'key': '10.1016/0098-1354(94)E0038-O_BIB175', 'article-title': 'Optimal control and identification for optical lithography', 'volume': '96', 'author': 'Ramirez', 'year': '1990', 'journal-title': 'Proc. Amer. Cont. Conf.'} / Proc. Amer. Cont. Conf. / Optimal control and identification for optical lithography by Ramirez (1990)
  176. 10.1111/j.1151-2916.1987.tb04915.x / J. Am. Ceram. Soc. / Theoretical analysis of chemical vapor deposition of ceramics in an impinging jet reactor by Rebenne (1987)
  177. {'key': '10.1016/0098-1354(94)E0038-O_BIB177', 'first-page': '262', 'article-title': 'Process diagnostics using wafer temperature mapping', 'author': 'Renken', 'year': '1993', 'journal-title': "RTP'93 Conf."} / RTP'93 Conf. / Process diagnostics using wafer temperature mapping by Renken (1993)
  178. {'key': '10.1016/0098-1354(94)E0038-O_BIB178', 'author': 'Rietman', 'year': '1992'} by Rietman (1992)
  179. 10.1116/1.586935 / J. Vac. Sci. Technol. B / Active neural network control of wafer attributes in a plasma etch process by Rietman (1993)
  180. {'key': '10.1016/0098-1354(94)E0038-O_BIB180', 'article-title': 'Neural network control of a plasma gate etch: early steps in wafer-to-wafer process control', 'author': 'Rietman', 'year': '1993', 'journal-title': 'IEEE-IEMI Conf.'} / IEEE-IEMI Conf. / Neural network control of a plasma gate etch: early steps in wafer-to-wafer process control by Rietman (1993)
  181. 10.1149/1.2113863 / J. Electrochem. Soc. / Analysis of multicomponent LPCVD processes by Roenigk (1985)
  182. 10.1149/1.2100756 / J. Electrochem. Soc. / Low pressure CVD of silicon nitride by Roenigk (1987)
  183. 10.1021/j100306a043 / J. Phys. Chem. / Rice—Ramsperger—Kassel—Marcus theoretical prediction of high pressure Arrhenius parameters by nonlinear regression: applications to silane and disilane decomposition by Roenigk (1987)
  184. {'key': '10.1016/0098-1354(94)E0038-O_BIB184', 'article-title': 'Manufacturing equipment issues in rapid thermal processing', 'author': 'Roozeboom', 'year': '1992'} / Manufacturing equipment issues in rapid thermal processing by Roozeboom (1992)
  185. 10.1116/1.584902 / J. Vac Sci. Technol. B / Rapid thermal processing system: a review with emphasis on temperature control by Roozeboom (1990)
  186. 10.1116/1.582759 / J. Vac. Sci. Technol. B / A critical examination of submicron optical lithography using simulated projection images by Rosenbluth (1983)
  187. {'key': '10.1016/0098-1354(94)E0038-O_BIB187', 'first-page': '63', 'article-title': 'Low pressure CVD processes for poly, nitride, and oxide', 'volume': '20', 'author': 'Rosler', 'year': '1977', 'journal-title': 'Solid State Technol.'} / Solid State Technol. / Low pressure CVD processes for poly, nitride, and oxide by Rosler (1977)
  188. {'key': '10.1016/0098-1354(94)E0038-O_BIB188', 'article-title': 'Equipment models for process optimization and control using smart response surfaces', 'author': 'Sachs', 'year': '1988', 'journal-title': 'Electrochem. Soc. Mtg'} / Electrochem. Soc. Mtg / Equipment models for process optimization and control using smart response surfaces by Sachs (1988)
  189. 10.1109/66.79725 / IEEE Trans. Semicon. Manufact. / Process control system for VLSI fabrication by Sachs (1991)
  190. {'key': '10.1016/0098-1354(94)E0038-O_BIB190', 'article-title': 'Run by run process control: combining SPC and feedback control', 'author': 'Sachs', 'year': '1992', 'journal-title': 'Semicond. Res. Center Publication'} / Semicond. Res. Center Publication / Run by run process control: combining SPC and feedback control by Sachs (1992)
  191. 10.1143/JJAP.6.339 / Jap. J. Appl. Phys. / Spectral emissivity of silicon by Sato (1967)
  192. 10.1007/BF00324195 / Appl. Phys. A / Low-order modeling and dynamic characterization of rapid thermal processing by Schaper (1992)
  193. 10.1109/66.286856 / IEEE Trans. Semicond. Manufact. / Control of MMST RTP: Repeatability, Uniformity, and Integration for Flexible Manufacturing by Schaper (1994)
  194. {'key': '10.1016/0098-1354(94)E0038-O_BIB194', 'article-title': 'Modeling, identification, and control of rapid thermal processing systems', 'author': 'Schaper', 'year': '1993', 'journal-title': 'J. Electrochem. Soc.'} / J. Electrochem. Soc. / Modeling, identification, and control of rapid thermal processing systems by Schaper (1993)
  195. 10.1149/1.2096585 / J. Electrochem. Soc. / Numerical simulation of a CF4/O2 plasma and correlation with spectroscopic and etch rate data by Schoenborn (1989)
  196. 10.1021/ie00092a008 / Ind. Engng Chem., Res. / Optimization of a low-pressure chemical vapor deposition reactor for the deposition of thin films by Setalvad (1989)
  197. 10.1149/1.2069323 / J. Electrochem. Soc. / Principal component analysis of optical emission spectroscopy and mass spectrometry: application to reactive ion etch process parameter estimation using neural networks by Shadmehr (1992)
  198. 10.1007/BF02652128 / J. Electron. Mater. / Modeling of chemical vapor deposition reactors by Sherman (1988)
  199. {'key': '10.1016/0098-1354(94)E0038-O_BIB199', 'author': 'Siegel', 'year': '1992'} by Siegel (1992)
  200. {'key': '10.1016/0098-1354(94)E0038-O_BIB200', 'first-page': '1393', 'year': '1991', 'journal-title': 'Rapid Thermal and Related Processing Techniques, SPIE'} / Rapid Thermal and Related Processing Techniques, SPIE (1991)
  201. {'key': '10.1016/0098-1354(94)E0038-O_BIB201', 'first-page': '31', 'article-title': 'Development trends in rapid isothermal processing (RIP) dominated semiconductor manufacturing', 'author': 'Singh', 'year': '1993', 'journal-title': "RTP'93 Conf."} / RTP'93 Conf. / Development trends in rapid isothermal processing (RIP) dominated semiconductor manufacturing by Singh (1993)
  202. 10.1063/1.325576 / J. Appl. Phys. / The plasma oxidation of CF4 in a tubular-alumina fast-flow reactor by Smolinsky (1979)
  203. {'key': '10.1016/0098-1354(94)E0038-O_BIB203', 'article-title': 'Monte-Carlo fluid hybrid model of rf glow discharges in various gas mixtures', 'author': 'Sommerer', 'year': '1991', 'journal-title': '44th Gaseous Electronics Conf., Albuquerque, NM'} / 44th Gaseous Electronics Conf., Albuquerque, NM / Monte-Carlo fluid hybrid model of rf glow discharges in various gas mixtures by Sommerer (1991)
  204. 10.1063/1.351196 / J. Appl. Phys. / Numrical investigation of the kinetics and chemistry of rf glow discharge plasmas sustained in He, N2, O2, He/N2/O2, He/CF4/O2, SiH4/NH3 using a Monte-Carlo-fluid hybrid model by Sommerer (1992)
  205. {'key': '10.1016/0098-1354(94)E0038-O_BIB205', 'article-title': 'Adaptive control of photolithography', 'author': 'Soper', 'year': '1992'} / Adaptive control of photolithography by Soper (1992)
  206. {'key': '10.1016/0098-1354(94)E0038-O_BIB206', 'first-page': '2998', 'article-title': 'An adaptive nonlinear control strategy for photolithography', 'author': 'Soper', 'year': '1993', 'journal-title': 'Proc. Amer. Control Conf.'} / Proc. Amer. Control Conf. / An adaptive nonlinear control strategy for photolithography by Soper (1993)
  207. {'key': '10.1016/0098-1354(94)E0038-O_BIB207', 'first-page': '94', 'article-title': 'Plastic deformation of the silicon wafer', 'author': 'Stephens', 'year': '1993', 'journal-title': "RTP'93 Conf."} / RTP'93 Conf. / Plastic deformation of the silicon wafer by Stephens (1993)
  208. 10.1149/1.2119775 / J. Electrochem. Soc. / A laser interferometer system to monitor dry etching of patterned silicon by Sternheim (1983)
  209. {'key': '10.1016/0098-1354(94)E0038-O_BIB209', 'article-title': 'Particle-in-cell/Monte-Carlo simulations of rf parallel plate discharges: a parametric study', 'author': 'Surendra', 'year': '1991'} / Particle-in-cell/Monte-Carlo simulations of rf parallel plate discharges: a parametric study by Surendra (1991)
  210. {'key': '10.1016/0098-1354(94)E0038-O_BIB210', 'author': 'Sze', 'year': '1988'} by Sze (1988)
  211. 10.1116/1.584958 / J. Vac. Sci. Technol. B / An investigation of the reactive ion etching of polysilicon in pure Cl2 plasmas by in situ ellipsometry and quadrupole mass spectrometry by Thomas (1990)
  212. {'key': '10.1016/0098-1354(94)E0038-O_BIB212', 'article-title': 'Algorithms for three-dimensional simulation of photoresist development', 'author': 'Toh', 'year': '1991'} / Algorithms for three-dimensional simulation of photoresist development by Toh (1991)
  213. 10.1117/12.44795 / Proc. of SPIE—Optical/Laser Microlithography IV / Three-dimensional simulation of optical lithography by Toh (1991)
  214. 10.1117/12.968413 / Proc. SPIE: Optical/Laser Microlithography / Characterization of voting suppression of optical defects through simulation by Toh (1988)
  215. 10.1149/1.2221647 / J. Electrochem. Soc. / Modeling of gas phase chemistry in the chemical vapor deposition of polysilicon in a cold wall system by Toprac (1993)
  216. 10.1149/1.2054979 / J. Electrochem. Soc. / A predictive model for the chemical vapor deposition of polysilicon in a cold wall, rapid thermal system by Toprac (1994)
  217. {'key': '10.1016/0098-1354(94)E0038-O_BIB217', 'article-title': 'Modeling RF glow discharges for microelectronics manufacturing processes', 'author': 'Trombley', 'year': '1991'} / Modeling RF glow discharges for microelectronics manufacturing processes by Trombley (1991)
  218. {'key': '10.1016/0098-1354(94)E0038-O_BIB218', 'article-title': 'Modeling of shot noise in X-ray photoresist exposure', 'author': 'Tumer', 'year': '1991'} / Modeling of shot noise in X-ray photoresist exposure by Tumer (1991)
  219. Turner T., Private Communication (1992).
  220. 10.1116/1.585089 / J. Vac. Sci. Technol. B / Resist profile simulation for photoresist composition optimization by Ushirogouchi (1990)
  221. 10.1016/0022-0248(81)90475-9 / J. Crystal Growth / Low pressure deposition of polycrystalline silicon from silane by van (1981)
  222. 10.1149/1.2096465 / J. Electrochem. Soc. / A mathematical model for LPCVD in a single wafer reactor by van (1989)
  223. 10.1063/1.338048 / J. Appl. Phys. / Modeling and control of the wafer temperatures in a diffusion furnace by van (1987)
  224. {'key': '10.1016/0098-1354(94)E0038-O_BIB224', 'author': 'Varma', 'year': '1977'} by Varma (1977)
  225. 10.1016/0022-0248(90)90394-Z / J. Cryst. Growth / Analysis of finite length dynamics in Czochralski crystal growth by Venerus (1990)
  226. 10.1149/1.2086928 / J. Electrochem. Soc. / Modeling of silicoan etching in CF4/O2 CH4/H2 plasmas by Venkatesan (1990)
  227. 10.1149/1.2097461 / J. Electrochem. Soc. / On the dynamics of an isothermal radial-flow plasma etcher by Venkatesan (1989)
  228. 10.1116/1.583282 / J. Vac. Sci. Technol. B / Analytical model of positive resist development applied to linewidth control in optical lithography by Watts (1985)
  229. 10.1149/1.2113718 / J. Electrochem. Soc. / A modeling study of superficial topography for improved lithography by White (1985)
  230. 10.1116/1.585302 / J. Vac. Sci. Technol. B / Phytoelectron effects in X-ray mask replication by White (1991)
  231. 10.1016/0009-2509(86)87141-X / Chem. Engng Sci. / Chemical vapor deposition of silicon under reduced pressure in hot-wall reactors by Wilke (1986)
  232. {'key': '10.1016/0098-1354(94)E0038-O_BIB232', 'author': 'Wolf', 'year': '1986'} by Wolf (1986)
  233. 10.1149/1.2100657 / J. Electrochem. Soc. / A model of growth rate nonuniformity in the simultaneous deposition and doping of a polycrystalline silicon film by LPCVD by Yeckel (1987)
  234. 10.1149/1.2086367 / J. Electrochem. Soc. / Strategies for the control of deposition uniformity in CVD by Yeckel (1990)
  235. 10.1149/1.2097155 / J. Electrochem. Soc. / The origin of nonuniform growth of LPCVD films from silane gas mixtures by Yeckel (1989)
  236. {'key': '10.1016/0098-1354(94)E0038-O_BIB236', 'article-title': 'Using in situ ellipsometry for film thickness endpoint control', 'volume': '166', 'author': 'Yu', 'year': '1991', 'journal-title': 'Semicond. Int.'} / Semicond. Int. / Using in situ ellipsometry for film thickness endpoint control by Yu (1991)
  237. 10.1149/1.2085698 / J. Electrochem. Soc. / Monitoring and control of real power in RF plasma processing by Zau (1991)
  238. {'key': '10.1016/0098-1354(94)E0038-O_BIB238', 'first-page': '30', 'article-title': 'Czochralski crystal growth', 'author': 'Zulehner', 'year': '1990', 'journal-title': 'Proc. Sixth Int. Symp. on Silicon Materials Science and Technology'} / Proc. Sixth Int. Symp. on Silicon Materials Science and Technology / Czochralski crystal growth by Zulehner (1990)
Dates
Type When
Created 23 years, 1 month ago (July 25, 2002, 9:06 a.m.)
Deposited 5 years, 7 months ago (Jan. 12, 2020, 8:19 a.m.)
Indexed 5 months ago (March 19, 2025, 6:30 a.m.)
Issued 30 years, 7 months ago (Jan. 1, 1995)
Published 30 years, 7 months ago (Jan. 1, 1995)
Published Print 30 years, 7 months ago (Jan. 1, 1995)
Funders 0

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@article{Badgwell_1995, title={Modeling and control of microelectronics materials processing}, volume={19}, ISSN={0098-1354}, url={http://dx.doi.org/10.1016/0098-1354(94)e0038-o}, DOI={10.1016/0098-1354(94)e0038-o}, number={1}, journal={Computers & Chemical Engineering}, publisher={Elsevier BV}, author={Badgwell, T.A. and Breedijk, T. and Bushman, S.G. and Butler, S.W. and Chatterjee, S. and Edgar, T.F. and Toprac, A.J. and Trachtenberg, I.}, year={1995}, month=jan, pages={1–41} }