DOI: 10.1016/0039-6028(92)90638-m. Tunneling spectroscopy on the GaAs(110) surface: Effect of dopant concentration

Tunneling spectroscopy on the GaAs(110) surface: Effect of dopant concentration

10.1016/0039-6028(92)90638-m

Crossref journal-article

Elsevier BV

Surface Science (78)

Bibliography

Maboudian, R., Pond, K., Bressler-Hill, V., Wassermeier, M., Petroff, P. M., Briggs, G. A. D., & Weinberg, W. H. (1992). Tunneling spectroscopy on the GaAs(110) surface: Effect of dopant concentration. Surface Science, 275(1â2), L662âL668.

Authors 7

R. Maboudian (first)
K. Pond (additional)
V. Bressler-Hill (additional)
M. Wassermeier (additional)
P.M. Petroff (additional)
G.A.D. Briggs (additional)
W.H. Weinberg (additional)

References 29 Referenced 35

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10.1103/PhysRevLett.60.2176 / Phys. Rev. Lett. by Pashley (1988)
10.1103/PhysRevB.41.5701 / Phys. Rev. by Beigelsen (1990)
10.1103/PhysRevLett.67.2697 / Phys. Rev. Lett. by Pashley (1991)
V. Bressler-Hill, M. Wassermeier, K. Pond, R. Maboudian, G.A.D. Briggs, P.M. Petroff and W.H. Weinberg, J. Vac. Sci. Technol. B, in press.
10.1016/0039-6028(87)90170-1 / Surf. Sci. by Feenstra (1987)
10.1116/1.575372 / J. Vac. Sci. Technol. by Kaiser (1988)
10.1063/1.99493 / Appl. Phys. Lett. by Bell (1988)
10.1116/1.586384 / J. Vac. Sci. Technol. by Johnson (1992)
10.1016/0039-6028(80)90577-4 / Surf. Sci. by Chiaradia (1980)
{'key': '10.1016/0039-6028(92)90638-M_BIB14', 'series-title': 'Physics and Chemistry of III–V Compound Semiconductor Interfaces', 'author': 'Wilmsen', 'year': '1985'} / Physics and Chemistry of III–V Compound Semiconductor Interfaces by Wilmsen (1985)
10.1063/1.104446 / Appl. Phys. Lett. by Pfeiffer (1991)
{'key': '10.1016/0039-6028(92)90638-M_BIB16', 'first-page': '66', 'article-title': 'The Technology and Physics of Molecular Beam Epitaxy', 'author': 'Parker', 'year': '1985'} / The Technology and Physics of Molecular Beam Epitaxy by Parker (1985)
{'key': '10.1016/0039-6028(92)90638-M_BIB17', 'series-title': 'Scanning Tunneling Microscopy and Related Methods', 'author': 'Feenstra', 'year': '1989'} / Scanning Tunneling Microscopy and Related Methods by Feenstra (1989)
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10.1063/1.103563 / Appl. Phys. Lett. by Albrektsen (1990)
10.1103/PhysRevB.45.6946 / Phys. Rev. by Salemink (1992)

Dates

Type	When
Created	22 years, 10 months ago (Oct. 21, 2002, 8:08 a.m.)
Deposited	6 years, 4 months ago (April 4, 2019, 1:53 p.m.)
Indexed	1 year, 6 months ago (Feb. 3, 2024, 7:57 p.m.)
Issued	32 years, 11 months ago (Sept. 1, 1992)
Published	32 years, 11 months ago (Sept. 1, 1992)
Published Print	32 years, 11 months ago (Sept. 1, 1992)

Funders 0

None

BibTeX

@article{Maboudian_1992, title={Tunneling spectroscopy on the GaAs(110) surface: Effect of dopant concentration}, volume={275}, ISSN={0039-6028}, url={http://dx.doi.org/10.1016/0039-6028(92)90638-m}, DOI={10.1016/0039-6028(92)90638-m}, number={1–2}, journal={Surface Science}, publisher={Elsevier BV}, author={Maboudian, R. and Pond, K. and Bressler-Hill, V. and Wassermeier, M. and Petroff, P.M. and Briggs, G.A.D. and Weinberg, W.H.}, year={1992}, month=sep, pages={L662–L668} }

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