DOI: 10.1016/0039-6028(83)90557-5. Valence-band discontinuities for abrupt (110), (100), and (111) oriented Ge-GaAs heterojunctions

Valence-band discontinuities for abrupt (110), (100), and (111) oriented Ge-GaAs heterojunctions

10.1016/0039-6028(83)90557-5

Crossref journal-article

Elsevier BV

Surface Science (78)

Bibliography

Waldrop, J. R., Kraut, E. A., Kowalczyk, S. P., & Grant, R. W. (1983). Valence-band discontinuities for abrupt (110), (100), and (111) oriented Ge-GaAs heterojunctions. Surface Science, 132(1â3), 513â518.

Authors 4

J.R. Waldrop (first)
E.A. Kraut (additional)
S.P. Kowalczyk (additional)
R.W. Grant (additional)

References 26 Referenced 57

10.1103/PhysRevLett.40.656 / Phys. Rev. Letters by Grant (1978)
10.1116/1.569806 / J. Vacuum Sci. Technol. by Grant (1978)
10.1116/1.569804 / J. Vacuum Sci. Technol. by Bauer (1978)
10.1103/PhysRevLett.43.1686 / Phys. Rev. Letters by Waldrop (1979)
10.1116/1.571130 / J. Vacuum Sci. Technol. by Waldrop (1981)
10.1116/1.571745 / J. Vacuum Sci. Technol. by Bauer (1982)
10.1116/1.571684 / J. Vacuum Sci. Technol. by Kowalczyk (1982)
10.1116/1.571746 / J. Vacuum Sci. Technol. by Mönch (1982)
10.1016/0039-6028(83)90554-X / Surface Sci. by Margaritondo (1983)
{'key': '10.1016/0039-6028(83)90557-5_BIB10', 'first-page': '000', 'volume': '132', 'author': 'Bauer', 'year': '1983', 'journal-title': 'Surface Sci.'} / Surface Sci. by Bauer (1983)
10.1016/0039-6028(83)90561-7 / Surface Sci. by Kroemer (1983)
10.1103/PhysRevLett.44.1620 / Phys. Rev. Letters by Kraut (1980)
E.A. Kraut, R.W. Grant, J.R. Waldrop and S.P. Kowalczyk, Phys. Rev. in press.
Our sample temperature was measured by a thermocouple attached to the sample heater. The initially reported (refs. [1] and [2]) growth and annealing temperatures have been reduced by 20% as an approximate correction for the temperature drop between the thermocouple and sample surface.
10.1116/1.571042 / J. Vacuum Sci. Technol. (1981)
10.1116/1.570179 / J. Vacuum Sci. Technol. by Bachrach (1979)
10.1116/1.570597 / J. Vacuum Sci. Technol. by Mönch (1980)
10.1063/1.91858 / Appl. Phys. Letters by Margaritondo (1980)
10.1116/1.570951 / J. Vacuum Sci. Technol. by Clearfield (1981)
10.1116/1.571128 / J. Vacuum Sci. Technol. by Chang (1981)
10.1016/0040-6090(82)90323-6 / Thin Solid Films by Bauer (1982)
10.1063/1.329254 / J. Appl. Phys. by Stall (1982)
10.1063/1.329261 / J. Appl. Phys. by Ballingall (1982)
10.1103/PhysRevLett.45.656 / Phys. Rev. Letters by Eastman (1980)
10.1063/1.90458 / Appl. Phys. Letters by Perfetti (1978)
10.1016/0038-1098(82)90102-8 / Solid State Commun. by Margaritondo (1982)

Dates

Type	When
Created	22 years, 10 months ago (Oct. 21, 2002, 12:08 p.m.)
Deposited	6 years, 5 months ago (April 4, 2019, 5:50 p.m.)
Indexed	1 year, 6 months ago (Feb. 7, 2024, 8:19 p.m.)
Issued	42 years ago (Sept. 1, 1983)
Published	42 years ago (Sept. 1, 1983)
Published Print	42 years ago (Sept. 1, 1983)

Funders 0

None

BibTeX

@article{Waldrop_1983, title={Valence-band discontinuities for abrupt (110), (100), and (111) oriented Ge-GaAs heterojunctions}, volume={132}, ISSN={0039-6028}, url={http://dx.doi.org/10.1016/0039-6028(83)90557-5}, DOI={10.1016/0039-6028(83)90557-5}, number={1–3}, journal={Surface Science}, publisher={Elsevier BV}, author={Waldrop, J.R. and Kraut, E.A. and Kowalczyk, S.P. and Grant, R.W.}, year={1983}, month=sep, pages={513–518} }

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