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Solid-State Electronics (78)
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Papadas, C., Ghibaudo, G., Pio, F., Monsérie, C., Pananakakis, G., Mortini, P., & Riva, C. (1994). On the charge build-up mechanisms in gate dielectrics. Solid-State Electronics, 37(3), 495–505.

Authors 7
  1. C. Papadas (first)
  2. G. Ghibaudo (additional)
  3. F. Pio (additional)
  4. C. Monsérie (additional)
  5. G. Pananakakis (additional)
  6. P. Mortini (additional)
  7. C. Riva (additional)
References 37 Referenced 34
  1. 10.1063/1.1663246 / J. appl. Phys. by Ning (1974)
  2. 10.1063/1.324253 / J. appl. Phys. by Solomon (1977)
  3. 10.1063/1.325096 / J. appl. Phys. by Harari (1978)
  4. 10.1063/1.325727 / J. appl. Phys. by Young (1979)
  5. 10.1063/1.331009 / J. appl. Phys. by Fischetti (1982)
  6. 10.1063/1.329126 / J. appl. Phys. by Itsumi (1981)
  7. 10.1063/1.335219 / J. appl. Phys. by Nissan-Cohen (1985)
  8. 10.1063/1.335222 / J. appl. Phys. by Fischetti (1985)
  9. 10.1063/1.335942 / J. appl. Phys. by Nissan-Cohen (1985)
  10. 10.1063/1.336152 / J. appl. Phys. by Wolters (1985)
  11. 10.1063/1.337204 / J. appl. Phys. by Nissan-Cohen (1986)
  12. 10.1016/0038-1101(86)90186-3 / Solid-St. Electron. by Do Thanh (1986)
  13. 10.1063/1.338948 / J. appl. Phys. by Dori (1987)
  14. 10.1016/0038-1101(90)90153-6 / Solid-St. Electron. by Sah (1989)
  15. {'key': '10.1016/0038-1101(94)90017-5_BIB15', 'first-page': '32', 'year': '1988'} (1988)
  16. 10.1063/1.342824 / J. appl. Phys. by DiMaria (1989)
  17. 10.1063/1.347040 / J. appl. Phys. by DiMaria (1990)
  18. 10.1063/1.344534 / J. appl. Phys. by Buchanan (1990)
  19. 10.1063/1.350357 / J. appl. Phys. by DiMaria (1991)
  20. 10.1063/1.348706 / J. appl. Phys. by Kamocsai (1991)
  21. 10.1016/0038-1101(91)90032-T / Solid-St. Electron. by Papadas (1991)
  22. {'key': '10.1016/0038-1101(94)90017-5_BIB22', 'series-title': 'Proc. IEEE/Int. Reliability Physics Symp.', 'first-page': '280', 'author': 'Monserie', 'year': '1993'} / Proc. IEEE/Int. Reliability Physics Symp. by Monserie (1993)
  23. 10.1063/1.335223 / J. appl. Phys. by Fischetti (1985)
  24. 10.1063/1.323212 / J. appl. Phys. by DiMaria (1976)
  25. 10.1063/1.350758 / J. appl. Phys. by Papadas (1992)
  26. 10.1049/el:19930166 / Electron. Lett. by Papadas (1993)
  27. 10.1016/0026-2692(93)90044-F / Microelectron. J. by Papadas (1993)
  28. 10.1109/16.223719 / IEEE Trans. Electron Devices by Papadas (1993)
  29. 10.1109/T-ED.1969.16744 / IEEE Trans. Electron Devices by Bruglers (1968)
  30. 10.1109/T-ED.1984.21472 / IEEE Trans. Electron Devices by Greoseneken (1984)
  31. {'key': '10.1016/0038-1101(94)90017-5_BIB31', 'series-title': "Proc. ESSDERC '92", 'first-page': '269', 'volume': '19', 'author': 'Papadas', 'year': '1992'} / Proc. ESSDERC '92 by Papadas (1992)
  32. 10.1109/T-ED.1965.15475 / IEEE Trans. Electron Devices by Heiman (1965)
  33. 10.1109/IEDM.1990.237141 / IEEE/IEDM Tech. Digest by Uchiyama (1990)
  34. 10.1143/JJAP.29.L2333 / Japan J. appl. Phys. by Fukuda (1990)
  35. 10.1109/55.119206 / IEEE Electron Device Lett. by Fukuda (1991)
  36. 10.1109/T-ED.1984.21694 / IEEE Trans. Electron Devices by Liang (1984)
  37. 10.1049/el:19921272 / Electron. Lett. by Joshi (1992)
Dates
Type When
Created 22 years, 10 months ago (Oct. 18, 2002, 3:24 a.m.)
Deposited 6 years, 4 months ago (April 5, 2019, 5 p.m.)
Indexed 3 weeks, 2 days ago (Aug. 7, 2025, 4:54 p.m.)
Issued 31 years, 5 months ago (March 1, 1994)
Published 31 years, 5 months ago (March 1, 1994)
Published Print 31 years, 5 months ago (March 1, 1994)
Funders 0

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@article{Papadas_1994, title={On the charge build-up mechanisms in gate dielectrics}, volume={37}, ISSN={0038-1101}, url={http://dx.doi.org/10.1016/0038-1101(94)90017-5}, DOI={10.1016/0038-1101(94)90017-5}, number={3}, journal={Solid-State Electronics}, publisher={Elsevier BV}, author={Papadas, C. and Ghibaudo, G. and Pio, F. and Monsérie, C. and Pananakakis, G. and Mortini, P. and Riva, C.}, year={1994}, month=mar, pages={495–505} }