DOI: 10.1016/0038-1101(88)90079-2. A new experimental determination of the relationship between the Hall mobility and the hole concentration in heavily doped p-type silicon

A new experimental determination of the relationship between the Hall mobility and the hole concentration in heavily doped p-type silicon

10.1016/0038-1101(88)90079-2

Crossref journal-article

Elsevier BV

Solid-State Electronics (78)

Bibliography

Sasaki, Y., Itoh, K., Inoue, E., Kishi, S., & Mitsuishi, T. (1988). A new experimental determination of the relationship between the Hall mobility and the hole concentration in heavily doped p-type silicon. Solid-State Electronics, 31(1), 5â12.

Authors 5

Y. Sasaki (first)
K. Itoh (additional)
E. Inoue (additional)
S. Kishi (additional)
T. Mitsuishi (additional)

References 18 Referenced 50

10.1002/j.1538-7305.1962.tb02415.x / Bell Syst. tech. J. by Irvin (1962)
{'key': '10.1016/0038-1101(88)90079-2_BIB2', 'first-page': '2192', 'volume': '55', 'author': 'Caughey', 'year': '1967'} by Caughey (1967)
10.1063/1.1663091 / J. appl. Phys. by Mousty (1974)
10.1016/0038-1101(75)90036-2 / Solid-St. Electron. by Baccarani (1975)
10.1149/1.2404044 / J. Electrochem. Soc. by Wagner (1972)
10.1149/1.2129394 / J. Electrochem. Soc. by Thurber (1980)
10.1149/1.2131518 / J. Electrochem. Soc. by Thurber (1978)
10.1109/T-ED.1983.21207 / IEEE Trans Electron Dev. by Masetti (1983)
{'key': '10.1016/0038-1101(88)90079-2_BIB9', 'first-page': '1', 'volume': '13', 'author': 'van der Pauw', 'year': '1958', 'journal-title': 'Philips Res. Rep.'} / Philips Res. Rep. by van der Pauw (1958)
10.1016/0022-3697(60)90157-8 / J. Phys. Chem. Solids by Wolfstirn (1960)
{'key': '10.1016/0038-1101(88)90079-2_BIB11', 'series-title': 'Physics of Semiconductor Devices', 'author': 'Sze', 'year': '1981'} / Physics of Semiconductor Devices by Sze (1981)
{'key': '10.1016/0038-1101(88)90079-2_BIB12', 'series-title': 'Semiconductors', 'author': 'Smith', 'year': '1978'} / Semiconductors by Smith (1978)
10.1139/p78-046 / Can. J. Phys. by Nakagawa (1978)
10.1103/RevModPhys.53.745 / Rev. Mod. Phys. by Chattopadhyay (1981)
10.1103/PhysRevB.11.2948 / Phys. Rev. by Ralph (1975)
{'key': '10.1016/0038-1101(88)90079-2_BIB16', 'first-page': 'L765', 'volume': '12C', 'author': 'Yanchev', 'year': '1979', 'journal-title': 'J. Phys.'} / J. Phys. by Yanchev (1979)
{'key': '10.1016/0038-1101(88)90079-2_BIB17_1', 'first-page': '660', 'author': 'Seely', 'year': '1958'} by Seely (1958)
{'key': '10.1016/0038-1101(88)90079-2_BIB17_2', 'first-page': '413', 'volume': '28', 'author': 'Millman', 'year': '1940'} by Millman (1940)

Dates

Type	When
Created	22 years, 10 months ago (Oct. 18, 2002, 4:14 a.m.)
Deposited	6 years, 5 months ago (April 5, 2019, 3:55 p.m.)
Indexed	4 months, 2 weeks ago (April 20, 2025, 12:30 a.m.)
Issued	37 years, 8 months ago (Jan. 1, 1988)
Published	37 years, 8 months ago (Jan. 1, 1988)
Published Print	37 years, 8 months ago (Jan. 1, 1988)

Funders 0

None

BibTeX

@article{Sasaki_1988, title={A new experimental determination of the relationship between the Hall mobility and the hole concentration in heavily doped p-type silicon}, volume={31}, ISSN={0038-1101}, url={http://dx.doi.org/10.1016/0038-1101(88)90079-2}, DOI={10.1016/0038-1101(88)90079-2}, number={1}, journal={Solid-State Electronics}, publisher={Elsevier BV}, author={Sasaki, Y. and Itoh, K. and Inoue, E. and Kishi, S. and Mitsuishi, T.}, year={1988}, month=jan, pages={5–12} }

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