DOI: 10.1016/0038-1101(83)90016-3. Effects of velocity overshoot on performance of GaAs devices, with design information

Effects of velocity overshoot on performance of GaAs devices, with design information

10.1016/0038-1101(83)90016-3

Crossref journal-article

Elsevier BV

Solid-State Electronics (78)

Bibliography

Buot, F. A., & Frey, J. (1983). Effects of velocity overshoot on performance of GaAs devices, with design information. Solid-State Electronics, 26(7), 617â632.

Authors 2

F.A. Buot (first)
Jeffrey Frey (additional)

References 28 Referenced 20

10.1109/T-ED.1972.17468 / IEEE Trans. Electron Dev. by Ruch (1972)
10.1063/1.323670 / J. Appl. Phys. by Maloney (1977)
{'key': '10.1016/0038-1101(83)90016-3_BIB3', 'series-title': 'Computer Simulation Using Particles', 'author': 'Hockney', 'year': '1981'} / Computer Simulation Using Particles by Hockney (1981)
{'key': '10.1016/0038-1101(83)90016-3_BIB4', 'article-title': 'Two-Dimensional Particle Models in Semiconductor Device Analysis', 'author': 'Hockney', 'year': '1972', 'journal-title': 'IBM Res. Rep. R2482'} / IBM Res. Rep. R2482 / Two-Dimensional Particle Models in Semiconductor Device Analysis by Hockney (1972)
10.1063/1.323496 / J. Appl. Phys. by Huang (1977)
{'key': '10.1016/0038-1101(83)90016-3_BIB6', 'series-title': 'Proc. Conf. Numerical Analysis of Semiconductor Dev.', 'author': 'Brewitt-Taylor', 'year': '1979'} / Proc. Conf. Numerical Analysis of Semiconductor Dev. by Brewitt-Taylor (1979)
10.1063/1.327292 / J. Appl. Phys. by Carnez (1980)
{'key': '10.1016/0038-1101(83)90016-3_BIB8', 'article-title': 'Investigation of the characteristics of indium phosphide Schottky gate field transistors by computer simulation', 'author': 'Norton', 'year': '1978'} / Investigation of the characteristics of indium phosphide Schottky gate field transistors by computer simulation by Norton (1978)
10.1109/T-ED.1981.20466 / IEEE Trans. Elec. Dev. by Curtice (1981)
W. R. Curtice via private communication.
10.1109/T-ED.1980.19996 / IEEE Trans. Elec. Dev. by Bozler (1980)
10.1109/TMTT.1980.1130098 / IEEE Trans. Microwave Theory and Tech. by Grubin (1980)
10.1109/T-ED.1982.20680 / IEEE Trans. Elec. Dev. by Higgins (1982)
10.1109/EDL.1982.25482 / IEEE Electron Dev. Lett. by Thornber (1982)
10.1109/T-ED.1970.16921 / IEEE Trans. Elec. Dev. by Bløtekjaer (1970)
F. A. Buot, J. A. Krumhansl and J. B. Socha (unpublished).
10.1109/T-ED.1982.20816 / IEEE Trans. Elec. dev. by Cook (1982)
{'key': '10.1016/0038-1101(83)90016-3_BIB16_2', 'series-title': 'Physics and numerical modeling of carrier transport in submicron semiconductor devices', 'author': 'Cook', 'year': '1981'} / Physics and numerical modeling of carrier transport in submicron semiconductor devices by Cook (1981)
10.1109/T-ED.1966.15629 / IEEE Trans. Elec. Dev. by McCumber (1966)
10.1109/T-ED.1982.20863 / IEEE Trans. Electron Dev. by Pone (1982)
{'key': '10.1016/0038-1101(83)90016-3_BIB19', 'first-page': '105', 'volume': '1', 'author': 'Warriner', 'year': '1977', 'journal-title': 'Solid St Electron Dev.'} / Solid St Electron Dev. by Warriner (1977)
{'key': '10.1016/0038-1101(83)90016-3_BIB20', 'first-page': '102', 'author': 'Kamei', 'year': '1980', 'journal-title': 'IEDM Dig. Tech. Papers'} / IEDM Dig. Tech. Papers by Kamei (1980)
{'key': '10.1016/0038-1101(83)90016-3_BIB21', 'first-page': '22', 'volume': '18', 'author': 'Feno', 'year': '1982', 'journal-title': 'Electron Lett.'} / Electron Lett. by Feno (1982)
10.1109/T-ED.1977.19000 / IEEE Trans. Elec. Dev. by Englemann (1977)
10.1109/T-ED.1982.20712 / IEEE Trans. Elec. Dev. by Faricelli (1982)
10.1063/1.328423 / J. Appl. Phys. by Nougier (1981)
{'key': '10.1016/0038-1101(83)90016-3_BIB25', 'first-page': '203', 'volume': '127', 'author': 'Sanghera', 'year': '1980'} by Sanghera (1980)
{'key': '10.1016/0038-1101(83)90016-3_BIB26', 'series-title': 'Very Large Scale Integration', 'first-page': '128', 'author': 'Eden', 'year': '1980'} / Very Large Scale Integration by Eden (1980)

Dates

Type	When
Created	22 years, 10 months ago (Oct. 18, 2002, 4:14 a.m.)
Deposited	6 years, 4 months ago (April 5, 2019, 3:23 p.m.)
Indexed	1 year, 6 months ago (Feb. 5, 2024, 12:23 a.m.)
Issued	42 years, 1 month ago (July 1, 1983)
Published	42 years, 1 month ago (July 1, 1983)
Published Print	42 years, 1 month ago (July 1, 1983)

Funders 0

None

BibTeX

@article{Buot_1983, title={Effects of velocity overshoot on performance of GaAs devices, with design information}, volume={26}, ISSN={0038-1101}, url={http://dx.doi.org/10.1016/0038-1101(83)90016-3}, DOI={10.1016/0038-1101(83)90016-3}, number={7}, journal={Solid-State Electronics}, publisher={Elsevier BV}, author={Buot, F.A. and Frey, Jeffrey}, year={1983}, month=jul, pages={617–632} }

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