DOI: 10.1016/0038-1101(82)90170-8. Charge accumulation and mobility in thin dielectric MOS transistors

Charge accumulation and mobility in thin dielectric MOS transistors

10.1016/0038-1101(82)90170-8

Crossref journal-article

Elsevier BV

Solid-State Electronics (78)

Bibliography

Sodini, C. G., Ekstedt, T. W., & Moll, J. L. (1982). Charge accumulation and mobility in thin dielectric MOS transistors. Solid-State Electronics, 25(9), 833â841.

Authors 3

C.G. Sodini (first)
T.W. Ekstedt (additional)
J.L. Moll (additional)

References 9 Referenced 264

10.1109/JSSC.1974.1050511 / IEEE J. Solid-St. Circuits by Dennard (1974)
10.1016/0038-1101(67)90040-8 / Solid-St. Electron. by Kamins (1967)
{'key': '10.1016/0038-1101(82)90170-8_BIB3', 'series-title': 'Presented at Device Research Conf.', 'article-title': 'Charge Accumulation and Mobility in Thin Gate MIS Devices', 'author': 'Sodini', 'year': '1980'} / Presented at Device Research Conf. / Charge Accumulation and Mobility in Thin Gate MIS Devices by Sodini (1980)
10.1109/T-ED.1979.19547 / IEEE Trans. Electron. by Yamaguchi (1979)
10.1016/0038-1101(73)90177-9 / Solid-St. Electron. by Koomen (1973)
10.1109/T-ED.1974.17984 / IEEE Trans. Electron Dev. by Tobey (1974)
{'key': '10.1016/0038-1101(82)90170-8_BIB7', 'series-title': 'Presented at Int. Electron Devices Meeting', 'article-title': 'Characterization of the electron mobility in the inverted〈100〉 Si surface', 'author': 'Sabnis', 'year': '1979'} / Presented at Int. Electron Devices Meeting / Characterization of the electron mobility in the inverted〈100〉 Si surface by Sabnis (1979)
10.1109/T-ED.1980.20063 / IEEE Trans. Electron Dev. by Sun (1980)
{'key': '10.1016/0038-1101(82)90170-8_BIB9', 'series-title': 'Presented at Int. Topical Conf. Physics of SiO2 and its Interfaces', 'article-title': 'Transient capacitance measurements of electronic states at the SiO2-Si interface', 'author': 'Johnson', 'year': '1978'} / Presented at Int. Topical Conf. Physics of SiO2 and its Interfaces / Transient capacitance measurements of electronic states at the SiO2-Si interface by Johnson (1978)

Dates

Type	When
Created	22 years, 10 months ago (Oct. 18, 2002, 12:14 a.m.)
Deposited	6 years, 4 months ago (April 5, 2019, 11:22 a.m.)
Indexed	4 days, 1 hour ago (Aug. 23, 2025, 12:59 a.m.)
Issued	42 years, 11 months ago (Sept. 1, 1982)
Published	42 years, 11 months ago (Sept. 1, 1982)
Published Print	42 years, 11 months ago (Sept. 1, 1982)

Funders 0

None

BibTeX

@article{Sodini_1982, title={Charge accumulation and mobility in thin dielectric MOS transistors}, volume={25}, ISSN={0038-1101}, url={http://dx.doi.org/10.1016/0038-1101(82)90170-8}, DOI={10.1016/0038-1101(82)90170-8}, number={9}, journal={Solid-State Electronics}, publisher={Elsevier BV}, author={Sodini, C.G. and Ekstedt, T.W. and Moll, J.L.}, year={1982}, month=sep, pages={833–841} }

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