DOI: 10.1016/0038-1101(81)90012-5. A new dielectric isolation method using porous silicon

A new dielectric isolation method using porous silicon

10.1016/0038-1101(81)90012-5

Crossref journal-article

Elsevier BV

Solid-State Electronics (78)

Bibliography

Imai, K. (1981). A new dielectric isolation method using porous silicon. Solid-State Electronics, 24(2), 159â164.

Authors 1

Kazuo Imai (first)

References 12 Referenced 137

10.1149/1.2133246 / J. Electrochem. Soc. by Bean (1977)
10.1063/1.1713618 / J. Appl. Phys. by Manasevit (1964)
10.1016/0022-0248(68)90133-4 / J. Crystal Growth by Dumin (1968)
10.1109/T-ED.1977.18812 / IEEE Trans. Electron Dev. by McGreivy (1977)
10.1149/1.2134015 / J. Electrochem. Soc. by Watanabe (1975)
{'key': '10.1016/0038-1101(81)90012-5_BIB6_1', 'series-title': 'Proc. 10th Conf. Solid State Dev.', 'author': 'Imai', 'year': '1978'} / Proc. 10th Conf. Solid State Dev. by Imai (1978)
10.7567/JJAPS.18S1.281 / J. Jap. Soc. Appl. Phys. by Buturi (1979)
10.1002/pssa.2210150110 / Phys. Stat. Sol. (a) by Ohmura (1973)
10.1016/0038-1101(75)90102-1 / Solid-St. Electron. by Ziegler (1975)
10.1103/PhysRevB.16.3851 / Phys. Rev. by Chu (1977)
10.1016/0029-554X(78)90921-7 / Nucl. Instrum. Methods by Magee (1978)
10.1109/T-ED.1978.19193 / IEEE Trans. Electron Dev. by Kranzer (1978)

Dates

Type	When
Created	22 years, 10 months ago (Oct. 18, 2002, 12:15 a.m.)
Deposited	6 years, 4 months ago (April 5, 2019, 12:50 p.m.)
Indexed	4 months, 1 week ago (April 13, 2025, 12:54 a.m.)
Issued	44 years, 6 months ago (Feb. 1, 1981)
Published	44 years, 6 months ago (Feb. 1, 1981)
Published Print	44 years, 6 months ago (Feb. 1, 1981)

Funders 0

None

BibTeX

@article{Imai_1981, title={A new dielectric isolation method using porous silicon}, volume={24}, ISSN={0038-1101}, url={http://dx.doi.org/10.1016/0038-1101(81)90012-5}, DOI={10.1016/0038-1101(81)90012-5}, number={2}, journal={Solid-State Electronics}, publisher={Elsevier BV}, author={Imai, Kazuo}, year={1981}, month=feb, pages={159–164} }

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