DOI: 10.1016/0038-1101(80)90197-5. A quasi-three-dimensional large-signal circuit model for lateral transient analysis of MOS device

A quasi-three-dimensional large-signal circuit model for lateral transient analysis of MOS device

10.1016/0038-1101(80)90197-5

Crossref journal-article

Elsevier BV

Solid-State Electronics (78)

Bibliography

Ho, A. P. I., & Sah, C. T. (1980). A quasi-three-dimensional large-signal circuit model for lateral transient analysis of MOS device. Solid-State Electronics, 23(4), 305â315.

Authors 2

Allen P.I. Ho (first)
C.T. Sah (additional)

References 26 Referenced 2

{'key': '10.1016/0038-1101(80)90197-5_BIB1', 'first-page': '1190', 'article-title': 'The silicon insulated gate field effect transistor', 'volume': '51', 'author': 'Hofstein', 'year': '1963'} / The silicon insulated gate field effect transistor by Hofstein (1963)
{'key': '10.1016/0038-1101(80)90197-5_BIB2', 'first-page': '1044', 'article-title': 'MOSFET memory circuits', 'volume': '59', 'author': 'Terman', 'year': '1971'} / MOSFET memory circuits by Terman (1971)
10.1109/MSPEC.1971.5218282 / IEEE Spectrum / Charge-coupled devices—a new approach to MOS device structures by Boyle (1971)
{'issue': '2', 'key': '10.1016/0038-1101(80)90197-5_BIB3_2', 'first-page': '1', 'article-title': 'Charge-coupled devices-an overview', 'volume': '18', 'author': 'Kosonocky', 'year': '1974', 'journal-title': 'Western Electron. Show and Conv. Tech. Papers'} / Western Electron. Show and Conv. Tech. Papers / Charge-coupled devices-an overview by Kosonocky (1974)
{'key': '10.1016/0038-1101(80)90197-5_BIB3_3', 'series-title': 'Charged-Coupled Devices: Technology and Applications', 'first-page': '28', 'author': 'Kosonocky', 'year': '1977'} / Charged-Coupled Devices: Technology and Applications by Kosonocky (1977)
10.1002/j.1538-7305.1966.tb01689.x / Bell Syst. Tech. J. / Ideal MOS curves for silicon by Goetzberger (1966)
{'key': '10.1016/0038-1101(80)90197-5_BIB5', 'article-title': 'Theory of the metal-oxide-semiconductor capacitor', 'volume': '1', 'author': 'Sah', 'year': '1964', 'journal-title': 'Solid-St. Eletron. Lab.'} / Solid-St. Eletron. Lab. / Theory of the metal-oxide-semiconductor capacitor by Sah (1964)
10.1016/0038-1101(62)90111-9 / Solid-St. Electron. / An investigation of surface states of a silicon/silicon dioxide interface employing metal-oxide-silicon diodes by Terman (1962)
10.1016/0038-1101(65)90046-8 / Solid-St. Electron. / Investigation of thermally oxidized silicon surfaces using metal-oxide-semiconductor structures by Grove (1965)
10.1002/j.1538-7305.1970.tb01790.x / Bell Syst. Tech. J. / Charge coupled semiconductor devices by Boyle (1970)
{'key': '10.1016/0038-1101(80)90197-5_BIB9_1', 'series-title': 'Proc. IEEE NE Electron Conf.', 'article-title': 'Electron beam memories', 'author': 'Speliotis', 'year': '1976'} / Proc. IEEE NE Electron Conf. / Electron beam memories by Speliotis (1976)
{'key': '10.1016/0038-1101(80)90197-5_BIB9_2', 'first-page': '501', 'article-title': 'Bridging the memory access gap', 'volume': '44', 'author': 'Speliotis', 'year': '1975'} / Bridging the memory access gap by Speliotis (1975)
{'key': '10.1016/0038-1101(80)90197-5_BIB10', 'first-page': '1230', 'article-title': 'A semiconductor nonvolatile electron beam accessed memory', 'volume': '63', 'author': 'Hughes', 'year': '1975'} / A semiconductor nonvolatile electron beam accessed memory by Hughes (1975)
10.1109/T-ED.1972.17497 / IEEE Trans. Electron. Dev. / Free charge transfer in charge coupled devices by Carnes (1972)
{'key': '10.1016/0038-1101(80)90197-5_BIB12', 'first-page': '1270', 'article-title': 'Charge control method of charge coupled device transfer analysis', 'volume': 'ED-19', 'author': 'Lee', 'year': '1972', 'journal-title': 'IEEE Trans. Electron. Dev.'} / IEEE Trans. Electron. Dev. / Charge control method of charge coupled device transfer analysis by Lee (1972)
10.1002/j.1538-7305.1971.tb02579.x / Bell Syst. Tech. J. / A nonlinear analysis of charge coupled device transfer by Strain (1972)
{'key': '10.1016/0038-1101(80)90197-5_BIB14', 'first-page': '5335', 'article-title': 'Physics of the MOS electron beam memory', 'volume': '41', 'author': 'Cohen', 'year': '1970', 'journal-title': 'J. Appl. Phys.'} / J. Appl. Phys. / Physics of the MOS electron beam memory by Cohen (1970)
10.1063/1.1663887 / J. Appl. Phys. / Effects of spatially inhomogeneous oxide charge distribution on the MOS capacitance characteristics by McNutt (1974)
10.1103/PhysRevB.19.2149 / Phys. Rev. by Shiue (1979)
{'key': '10.1016/0038-1101(80)90197-5_BIB16_2', 'series-title': 'Yamada Conference II on Electronic Properties of Two-Dimensional Systems', 'article-title': 'Theory and experiment of electron mobility on silicon surface in weak inversion', 'year': '1979'} / Yamada Conference II on Electronic Properties of Two-Dimensional Systems / Theory and experiment of electron mobility on silicon surface in weak inversion (1979)
10.1109/T-ED.1973.17810 / IEEE Trans. Electron. Dev. / The influence of surface potential fluctuations on the operation of the MOS transistor in weak inversion by Van Overstraeten (1973)
{'key': '10.1016/0038-1101(80)90197-5_BIB18_1', 'first-page': '654', 'article-title': 'The equivalent circuit model in solid state electronics—part I.', 'volume': '55', 'author': 'Sah', 'year': '1967'} / The equivalent circuit model in solid state electronics—part I. by Sah (1967)
{'key': '10.1016/0038-1101(80)90197-5_BIB18_2', 'first-page': '672', 'article-title': 'The equivalent circuit model in solid state electronics—part II', 'volume': '55', 'author': 'Sah', 'year': '1967'} / The equivalent circuit model in solid state electronics—part II by Sah (1967)
10.1016/0038-1101(70)90035-3 / Solid-St. Electron. / The equivalent circuit model in solid state electronics—part III by Sah (1970)
10.1016/0038-1101(74)90046-X / Solid-St. Electron. / Application of the small signal transmission line equivalent circuit model to the a.c., d.c. and transient analysis of semiconductor devices by Green (1974)
{'key': '10.1016/0038-1101(80)90197-5_BIB21', 'first-page': '202', 'article-title': 'Transient response of MOS capacitors under localized photoexcitation', 'volume': 'ED-21', 'author': 'Sah', 'year': '1974', 'journal-title': 'IEEE Trans. Electron. Dev.'} / IEEE Trans. Electron. Dev. / Transient response of MOS capacitors under localized photoexcitation by Sah (1974)

Dates

Type	When
Created	22 years, 10 months ago (Oct. 18, 2002, 4:15 a.m.)
Deposited	6 years, 4 months ago (April 5, 2019, 4:30 p.m.)
Indexed	3 years, 4 months ago (April 1, 2022, 2:18 p.m.)
Issued	45 years, 4 months ago (April 1, 1980)
Published	45 years, 4 months ago (April 1, 1980)
Published Print	45 years, 4 months ago (April 1, 1980)

Funders 0

None

BibTeX

@article{Ho_1980, title={A quasi-three-dimensional large-signal circuit model for lateral transient analysis of MOS device}, volume={23}, ISSN={0038-1101}, url={http://dx.doi.org/10.1016/0038-1101(80)90197-5}, DOI={10.1016/0038-1101(80)90197-5}, number={4}, journal={Solid-State Electronics}, publisher={Elsevier BV}, author={Ho, Allen P.I. and Sah, C.T.}, year={1980}, month=apr, pages={305–315} }

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