DOI: 10.1016/0038-1101(78)90151-x. The band structure dependence of impact ionization by hot carriers in semiconductors: GaAs

The band structure dependence of impact ionization by hot carriers in semiconductors: GaAs

10.1016/0038-1101(78)90151-x

Crossref journal-article

Elsevier BV

Solid-State Electronics (78)

Bibliography

Pearsall, T. P., Capasso, F., Nahory, R. E., Pollack, M. A., & Chelikowsky, J. R. (1978). The band structure dependence of impact ionization by hot carriers in semiconductors: GaAs. Solid-State Electronics, 21(1), 297â302.

Authors 5

Thomas P. Pearsall (first)
Federico Capasso (additional)
Robert E. Nahory (additional)
Martin A. Pollack (additional)
James R. Chelikowsky (additional)

References 11 Referenced 126

10.1103/PhysRevB.14.556 / Phys. Rev. B by Chelikowsky (1976)
10.1103/PhysRevB.5.2267 / Phys. Rev. B by Anderson (1972)
10.1016/0022-3697(59)90269-0 / J. Phys. Chem. Solids by Kane (1959)
{'key': '10.1016/0038-1101(78)90151-X_BIB4', 'series-title': 'Symposium on GaAs and Related Compounds: Boulder', 'first-page': '231', 'author': 'Miller', 'year': '1972'} / Symposium on GaAs and Related Compounds: Boulder by Miller (1972)
10.1063/1.88489 / Appl. Phys. Lett. by Pearsall (1975)
10.1016/0038-1101(73)90013-0 / Solid-St. Electron by Woods (1973)
10.1063/1.1655016 / Appl. Phys. Lett. by Stillman (1974)
10.1103/PhysRev.128.2507 / Phys. Rev. by Baraff (1962)
10.1063/1.88776 / Appl. Phys. Lett. by Pearsall (1976)
{'key': '10.1016/0038-1101(78)90151-X_BIB10', 'series-title': 'Symposium on GaAs and Related Compounds: St. Louis', 'first-page': '331', 'author': 'Pearsall', 'year': '1976'} / Symposium on GaAs and Related Compounds: St. Louis by Pearsall (1976)
10.1063/1.1657024 / J. Appl. Phys. by Panish (1969)

Dates

Type	When
Created	22 years, 10 months ago (Oct. 18, 2002, 4:15 a.m.)
Deposited	6 years, 4 months ago (April 5, 2019, 4:21 p.m.)
Indexed	4 months, 4 weeks ago (March 24, 2025, 2:36 a.m.)
Issued	47 years, 7 months ago (Jan. 1, 1978)
Published	47 years, 7 months ago (Jan. 1, 1978)
Published Print	47 years, 7 months ago (Jan. 1, 1978)

Funders 0

None

BibTeX

@article{Pearsall_1978, title={The band structure dependence of impact ionization by hot carriers in semiconductors: GaAs}, volume={21}, ISSN={0038-1101}, url={http://dx.doi.org/10.1016/0038-1101(78)90151-x}, DOI={10.1016/0038-1101(78)90151-x}, number={1}, journal={Solid-State Electronics}, publisher={Elsevier BV}, author={Pearsall, Thomas P. and Capasso, Federico and Nahory, Robert E. and Pollack, Martin A. and Chelikowsky, James R.}, year={1978}, month=jan, pages={297–302} }

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