DOI: 10.1016/0038-1101(76)90020-4. Temperature dependence of boron diffusion in (111), (110) and (100) silicon

Temperature dependence of boron diffusion in (111), (110) and (100) silicon

10.1016/0038-1101(76)90020-4

Crossref journal-article

Elsevier BV

Solid-State Electronics (78)

Bibliography

Masetti, G., Solmi, S., & Soncini, G. (1976). Temperature dependence of boron diffusion in (111), (110) and (100) silicon. Solid-State Electronics, 19(6), 545â546.

Authors 3

G. Masetti (first)
S. Solmi (additional)
G. Soncini (additional)

References 8 Referenced 26

10.1016/0038-1101(69)90122-1 / Solid-St. Electron. by Wills (1969)
{'key': '10.1016/0038-1101(76)90020-4_BIB2', 'first-page': '588', 'volume': '58', 'author': 'Chan', 'year': '1970'} by Chan (1970)
10.1016/0038-1101(71)90190-0 / Solid-St. Electron. by Allen (1971)
10.1016/0038-1098(73)90869-7 / Solid-St. Commun. by Masetti (1973)
10.1016/0038-1101(73)90114-7 / Solid-St. Electron. by Allen (1973)
{'key': '10.1016/0038-1101(76)90020-4_BIB6', 'first-page': '626', 'volume': '42', 'author': 'Masetti', 'year': '1973', 'journal-title': 'Alta Frequenza'} / Alta Frequenza by Masetti (1973)
10.1143/JJAP.3.377 / Jap. J. Appl. Phys. by Kato (1964)
10.1049/el:19730164 / Electron. Letters by Masetti (1973)

Dates

Type	When
Created	22 years, 10 months ago (Oct. 18, 2002, 4:15 a.m.)
Deposited	6 years, 4 months ago (April 5, 2019, 3:58 p.m.)
Indexed	1 year, 6 months ago (Feb. 5, 2024, 9:59 a.m.)
Issued	49 years, 2 months ago (June 1, 1976)
Published	49 years, 2 months ago (June 1, 1976)
Published Print	49 years, 2 months ago (June 1, 1976)

Funders 0

None

BibTeX

@article{Masetti_1976, title={Temperature dependence of boron diffusion in (111), (110) and (100) silicon}, volume={19}, ISSN={0038-1101}, url={http://dx.doi.org/10.1016/0038-1101(76)90020-4}, DOI={10.1016/0038-1101(76)90020-4}, number={6}, journal={Solid-State Electronics}, publisher={Elsevier BV}, author={Masetti, G. and Solmi, S. and Soncini, G.}, year={1976}, month=jun, pages={545–546} }

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