DOI: 10.1016/0038-1101(66)90068-2. Effects of diffusion current on characteristics of metal-oxide (insulator)-semiconductor transistors

Effects of diffusion current on characteristics of metal-oxide (insulator)-semiconductor transistors

10.1016/0038-1101(66)90068-2

Crossref journal-article

Elsevier BV

Solid-State Electronics (78)

Bibliography

Pao, H. C., & Sah, C. T. (1966). Effects of diffusion current on characteristics of metal-oxide (insulator)-semiconductor transistors. Solid-State Electronics, 9(10), 927â937.

Authors 2

H.C. Pao (first)
C.T. Sah (additional)

References 16 Referenced 507

{'key': '10.1016/0038-1101(66)90068-2_BIB1', 'series-title': 'IRE-IEEE Solid State Devices Research Conference', 'author': 'Kahng', 'year': '1960'} / IRE-IEEE Solid State Devices Research Conference by Kahng (1960)
10.1063/1.1754323 / Appl. Phys. Lett. by Nathanson (1965)
{'key': '10.1016/0038-1101(66)90068-2_BIB3', 'first-page': '87', 'volume': '54', 'author': 'Tombs', 'year': '1966'} by Tombs (1966)
{'key': '10.1016/0038-1101(66)90068-2_BIB4', 'first-page': '1365', 'volume': '40', 'author': 'Shockley', 'year': '1956'} by Shockley (1956)
{'key': '10.1016/0038-1101(66)90068-2_BIB5', 'author': 'Ihantola', 'year': '1961', 'journal-title': 'Stanford Electronics Lab. Rept. No. 1661-1'} / Stanford Electronics Lab. Rept. No. 1661-1 by Ihantola (1961)
10.1109/T-ED.1965.15469 / IEEE Trans. Electron Devices by Reddi (1965)
10.1109/T-ED.1965.15468 / IEEE Trans. Electron Devices by Hofstein (1965)
10.1016/0038-1101(64)90141-8 / Solid-St. Electron. by Wright (1964)
10.1016/0038-1101(63)90126-6 / Solid-St. Electron. by Grosvalet (1963)
10.1109/T-ED.1964.15327 / IEEE Trans. Electron Devices by Root (1964)
10.1103/PhysRev.97.641 / Phys. Rev. by Schrieffer (1955)
{'key': '10.1016/0038-1101(66)90068-2_BIB12', 'first-page': '618', 'volume': '52', 'author': 'Winslow', 'year': '1964'} by Winslow (1964)
10.1016/0038-1101(66)90084-0 / Solid-St. Electron. by Geurst (1966)
10.1109/IREPGED.1953.6811074 / IRE Trans. Electron Devices by Prim (1953)
10.1109/T-ED.1964.15336 / IEEE Trans. Electron Devices by Sah (1964)
10.1109/T-ED.1966.15702 / IEEE Trans. Electron Devices by Sah (1966)

Dates

Type	When
Created	22 years, 10 months ago (Oct. 18, 2002, 8:57 a.m.)
Deposited	6 years, 4 months ago (April 5, 2019, 2:57 p.m.)
Indexed	2 weeks, 5 days ago (Aug. 6, 2025, 8:34 a.m.)
Issued	58 years, 10 months ago (Oct. 1, 1966)
Published	58 years, 10 months ago (Oct. 1, 1966)
Published Print	58 years, 10 months ago (Oct. 1, 1966)

Funders 0

None

BibTeX

@article{Pao_1966, title={Effects of diffusion current on characteristics of metal-oxide (insulator)-semiconductor transistors}, volume={9}, ISSN={0038-1101}, url={http://dx.doi.org/10.1016/0038-1101(66)90068-2}, DOI={10.1016/0038-1101(66)90068-2}, number={10}, journal={Solid-State Electronics}, publisher={Elsevier BV}, author={Pao, H.C. and Sah, C.T.}, year={1966}, month=oct, pages={927–937} }

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