DOI: 10.1016/0038-1098(78)90218-1. Theoretical study of relaxation at the (110) Ge-GaAs interface

Theoretical study of relaxation at the (110) Ge-GaAs interface

10.1016/0038-1098(78)90218-1

Crossref journal-article

Elsevier BV

Solid State Communications (78)

Bibliography

Pickett, W. E., & Cohen, M. L. (1978). Theoretical study of relaxation at the (110) Ge-GaAs interface. Solid State Communications, 25(4), 225â227.

Authors 2

Warren E. Pickett (first)
Marvin L. Cohen (additional)

References 5 Referenced 17

10.1103/PhysRevLett.38.237 / Phys. Rev. Lett. by Baraff (1977)
10.1116/1.569411 / J. Vac. Sci. Technol. (1977)
10.1103/PhysRevLett.39.109 / Phys. Rev. Lett. by Pickett (1977)
PICKETT, W.E., LOUIE, S.G. and COHEN, M.L., Phys. Rev. B (in press).
10.1103/PhysRev.137.A245 / Phys. Rev. by Gobeli (1965)

Dates

Type	When
Created	22 years, 10 months ago (Oct. 18, 2002, 1:06 a.m.)
Deposited	6 years, 4 months ago (April 5, 2019, 10:21 p.m.)
Indexed	1 year, 6 months ago (Feb. 4, 2024, 9:21 p.m.)
Issued	47 years, 7 months ago (Jan. 1, 1978)
Published	47 years, 7 months ago (Jan. 1, 1978)
Published Print	47 years, 7 months ago (Jan. 1, 1978)

Funders 0

None

BibTeX

@article{Pickett_1978, title={Theoretical study of relaxation at the (110) Ge-GaAs interface}, volume={25}, ISSN={0038-1098}, url={http://dx.doi.org/10.1016/0038-1098(78)90218-1}, DOI={10.1016/0038-1098(78)90218-1}, number={4}, journal={Solid State Communications}, publisher={Elsevier BV}, author={Pickett, Warren E. and Cohen, Marvin L.}, year={1978}, month=jan, pages={225–227} }

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