DOI: 10.1016/0022-0248(94)90719-6. Heteroepitaxy of GaSe layered semiconductor compound on Si(111) 7 × 7 substrate: a Van der Waals epitaxy?

Heteroepitaxy of GaSe layered semiconductor compound on Si(111) 7 × 7 substrate: a Van der Waals epitaxy?

10.1016/0022-0248(94)90719-6

Crossref journal-article

Elsevier BV

Journal of Crystal Growth (78)

Bibliography

Vinh, L. T., Eddrief, M., SÃ©benne, C., Sacuto, A., & Balkanski, M. (1994). Heteroepitaxy of GaSe layered semiconductor compound on Si(111) 7 Ã 7 substrate: a Van der Waals epitaxy? Journal of Crystal Growth, 135(1â2), 1â10.

Authors 5

Le Thanh Vinh (first)
M. Eddrief (additional)
C. Sébenne (additional)
A. Sacuto (additional)
M. Balkanski (additional)

References 33 Referenced 55

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Dates

Type	When
Created	22 years, 10 months ago (Oct. 16, 2002, 1:17 p.m.)
Deposited	6 years, 4 months ago (April 7, 2019, 9:55 p.m.)
Indexed	1 month ago (July 28, 2025, 6:04 p.m.)
Issued	31 years, 8 months ago (Jan. 1, 1994)
Published	31 years, 8 months ago (Jan. 1, 1994)
Published Print	31 years, 8 months ago (Jan. 1, 1994)

Funders 0

None

BibTeX

@article{Vinh_1994, title={Heteroepitaxy of GaSe layered semiconductor compound on Si(111) 7 × 7 substrate: a Van der Waals epitaxy?}, volume={135}, ISSN={0022-0248}, url={http://dx.doi.org/10.1016/0022-0248(94)90719-6}, DOI={10.1016/0022-0248(94)90719-6}, number={1–2}, journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Vinh, Le Thanh and Eddrief, M. and Sébenne, C. and Sacuto, A. and Balkanski, M.}, year={1994}, month=jan, pages={1–10} }

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