DOI: 10.1016/0022-0248(94)90448-0. Selective growth of wurtzite GaN and AlxGa1−xN on GaN/sapphire substrates by metalorganic vapor phase epitaxy

Selective growth of wurtzite GaN and AlxGa1−xN on GaN/sapphire substrates by metalorganic vapor phase epitaxy

10.1016/0022-0248(94)90448-0

Crossref journal-article

Elsevier BV

Journal of Crystal Growth (78)

Bibliography

Kato, Y., Kitamura, S., Hiramatsu, K., & Sawaki, N. (1994). Selective growth of wurtzite GaN and AlxGa1âxN on GaN/sapphire substrates by metalorganic vapor phase epitaxy. Journal of Crystal Growth, 144(3â4), 133â140.

Authors 4

Yoshiki Kato (first)
Shota Kitamura (additional)
Kazumasa Hiramatsu (additional)
Nobuhiko Sawaki (additional)

References 13 Referenced 289

10.1143/JJAP.23.L342 / Jap. J. Appl. Phys. by Imamura (1984)
10.1063/1.332900 / J. Appl. Phys. by Asai (1984)
10.1063/1.98621 / Appl. Phys. Lett. by Asai (1987)
10.1063/1.103487 / Appl. Phys. Lett. by Fukui (1990)
10.1049/el:19890282 / Electron. Lett. by Fukui (1989)
10.1016/0022-0248(90)90836-A / J. Crystal Growth by Hiruma (1990)
10.1063/1.351900 / J. Appl. Phys. by Yamaguchi (1992)
10.1143/JJAP.32.1523 / Jap. J. Appl. Phys. by Yamaguchi (1993)
10.1143/JJAP.33.694 / Jap. J. Appl. Phys. by Nagahara (1994)
10.1063/1.96549 / Appl. Phys. Lett. by Amano (1986)
10.1016/0022-0248(89)90200-5 / J. Crystal Growth by Akasaki (1989)
10.1016/0022-0248(90)90156-F / J. Crystal Growth by Itoh (1990)
{'key': '10.1016/0022-0248(94)90448-0_BIB13', 'series-title': 'Modern Crystallography III: Crystal Growth', 'first-page': '79', 'author': 'Chernov', 'year': '1984'} / Modern Crystallography III: Crystal Growth by Chernov (1984)

Dates

Type	When
Created	22 years, 10 months ago (Oct. 16, 2002, 9:17 a.m.)
Deposited	6 years, 4 months ago (April 7, 2019, 6:25 p.m.)
Indexed	1 month ago (July 25, 2025, 6:55 a.m.)
Issued	30 years, 8 months ago (Dec. 1, 1994)
Published	30 years, 8 months ago (Dec. 1, 1994)
Published Print	30 years, 8 months ago (Dec. 1, 1994)

Funders 0

None

BibTeX

@article{Kato_1994, title={Selective growth of wurtzite GaN and AlxGa1−xN on GaN/sapphire substrates by metalorganic vapor phase epitaxy}, volume={144}, ISSN={0022-0248}, url={http://dx.doi.org/10.1016/0022-0248(94)90448-0}, DOI={10.1016/0022-0248(94)90448-0}, number={3–4}, journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Kato, Yoshiki and Kitamura, Shota and Hiramatsu, Kazumasa and Sawaki, Nobuhiko}, year={1994}, month=dec, pages={133–140} }

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