DOI: 10.1016/0022-0248(93)90822-e. Growth process and mechanism of nanometer-scale GaAs dot-structures using MOCVD selective growth

Growth process and mechanism of nanometer-scale GaAs dot-structures using MOCVD selective growth

10.1016/0022-0248(93)90822-e

Crossref journal-article

Elsevier BV

Journal of Crystal Growth (78)

Bibliography

Nagamune, Y., Tsukamoto, S., Nishioka, M., & Arakawa, Y. (1993). Growth process and mechanism of nanometer-scale GaAs dot-structures using MOCVD selective growth. Journal of Crystal Growth, 126(4), 707â717.

Authors 4

Y. Nagamune (first)
S. Tsukamoto (additional)
M. Nishioka (additional)
Y. Arakawa (additional)

References 23 Referenced 41

10.1063/1.92959 / Appl. Phys. Letters by Arakawa (1982)
10.1063/1.95453 / Appl. Phys. Letters by Arakawa (1984)
{'key': '10.1016/0022-0248(93)90822-E_BIB3', 'first-page': '53', 'volume': '13', 'author': 'Nakayama', 'year': '1977', 'journal-title': 'Fujitsu Sci. Technol. J.'} / Fujitsu Sci. Technol. J. by Nakayama (1977)
10.1063/1.93584 / Appl. Phys. Letters by Gale (1982)
{'key': '10.1016/0022-0248(93)90822-E_BIB4_2', 'series-title': 'Proc. 10th Intern. Symp. on GaAs and Related Compounds', 'first-page': '101', 'author': 'Gale', 'year': '1983'} / Proc. 10th Intern. Symp. on GaAs and Related Compounds by Gale (1983)
10.1063/1.98621 / Appl. Phys. Letters by Asai (1987)
10.1049/el:19890282 / Electron. Letters by Fukui (1989)
10.1063/1.103487 / Appl. Phys. Letters by Fukui (1990)
{'key': '10.1016/0022-0248(93)90822-E_BIB8_1', 'series-title': 'Extended Abstracts 22nd (1990 Intern.) Conf. on Solid State Devices and Materials', 'first-page': '99', 'author': 'Fukui', 'year': '1990'} / Extended Abstracts 22nd (1990 Intern.) Conf. on Solid State Devices and Materials by Fukui (1990)
10.1063/1.105026 / Appl. Phys. Letters by Fukui (1991)
10.1063/1.100805 / Appl. Phys. Letters by Kuech (1989)
10.1063/1.102862 / Appl. Phys. Letters by Lebens (1990)
10.1063/1.104891 / Appl. Phys. Letters by Galeuchet (1991)
10.1063/1.341490 / J. Appl. Phys. by Ohtsuka (1988)
10.1016/0022-0248(91)90355-9 / J. Crystal Growth by Jones (1991)
10.1143/JJAP.24.1666 / Japan. J. Appl. Phys. by Yamaguchi (1985)
{'key': '10.1016/0022-0248(93)90822-E_BIB15_1', 'series-title': 'Extended Abstracts 1991 Intern. Conf. on Solid State Devices and Materials', 'first-page': '414', 'author': 'Tsukamoto', 'year': '1991'} / Extended Abstracts 1991 Intern. Conf. on Solid State Devices and Materials by Tsukamoto (1991)
10.1063/1.350695 / J. Appl. Phys. by Tsukamoto (1992)
10.1143/JJAP.19.L735 / Japan J. Appl. Phys. by Sakaki (1980)
10.1143/JJAP.27.L437 / Japan. J. Appl. Phys. by Okamoto (1988)
10.1103/PhysRev.176.993 / Phys. Rev. by Bogardus (1968)
10.1063/1.91927 / Appl. Phys. Letters by Künzel (1980)
{'key': '10.1016/0022-0248(93)90822-E_BIB20', 'first-page': '759', 'volume': '4', 'author': 'Rashba', 'year': '1962', 'journal-title': 'Soviet Phys.-Solid State'} / Soviet Phys.-Solid State by Rashba (1962)

Dates

Type	When
Created	22 years, 10 months ago (Oct. 16, 2002, 1:17 p.m.)
Deposited	3 years, 2 months ago (June 20, 2022, 8:08 p.m.)
Indexed	1 year, 1 month ago (July 5, 2024, 3:16 p.m.)
Issued	32 years, 6 months ago (Feb. 1, 1993)
Published	32 years, 6 months ago (Feb. 1, 1993)
Published Print	32 years, 6 months ago (Feb. 1, 1993)

Funders 0

None

BibTeX

@article{Nagamune_1993, title={Growth process and mechanism of nanometer-scale GaAs dot-structures using MOCVD selective growth}, volume={126}, ISSN={0022-0248}, url={http://dx.doi.org/10.1016/0022-0248(93)90822-e}, DOI={10.1016/0022-0248(93)90822-e}, number={4}, journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Nagamune, Y. and Tsukamoto, S. and Nishioka, M. and Arakawa, Y.}, year={1993}, month=feb, pages={707–717} }

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