DOI: 10.1016/0022-0248(92)90507-f. Fabrication of InGaAs strained quantum wires using selective MOCVD growth on SiO2-patterned GaAs substrate

Fabrication of InGaAs strained quantum wires using selective MOCVD growth on SiO2-patterned GaAs substrate

10.1016/0022-0248(92)90507-f

Crossref journal-article

Elsevier BV

Journal of Crystal Growth (78)

Bibliography

Nishioka, M., Tsukamoto, S., Nagamune, Y., Tanaka, T., & Arakawa, Y. (1992). Fabrication of InGaAs strained quantum wires using selective MOCVD growth on SiO2-patterned GaAs substrate. Journal of Crystal Growth, 124(1â4), 502â506.

Authors 5

M. Nishioka (first)
S. Tsukamoto (additional)
Y. Nagamune (additional)
T. Tanaka (additional)
Y. Arakawa (additional)

References 12 Referenced 18

10.1063/1.92959 / Appl. Phys. Letters by Arakawa (1982)
10.1063/1.95453 / Appl. Phys. Letters by Arakawa (1984)
10.1016/0022-0248(88)90630-6 / J. Crystal Growth by Bhat (1988)
10.1063/1.102862 / Appl. Phys. Letters by Lebens (1990)
10.1063/1.103487 / Appl. Phys. Letters by Fukui (1990)
{'key': '10.1016/0022-0248(92)90507-F_BIB6_1', 'series-title': "Proc. SSDM'91", 'first-page': '414', 'author': 'Tsukamoto', 'year': '1991'} / Proc. SSDM'91 by Tsukamoto (1991)
10.1063/1.350695 / J. Appl. Phys. by Tsukamoto (1992)
{'key': '10.1016/0022-0248(92)90507-F_BIB7', 'series-title': "IIAS '91", 'author': 'Nagamune', 'year': '1991'} / IIAS '91 by Nagamune (1991)
{'key': '10.1016/0022-0248(92)90507-F_BIB8', 'series-title': "IQWC '92", 'author': 'Ishikawa', 'year': '1992'} / IQWC '92 by Ishikawa (1992)
10.1016/0022-0248(91)90525-A / J. Crystal Growth by Grodzinski (1991)
{'key': '10.1016/0022-0248(92)90507-F_BIB10', 'series-title': "MSS '91", 'author': 'Yamauchi', 'year': '1991'} / MSS '91 by Yamauchi (1991)
{'key': '10.1016/0022-0248(92)90507-F_BIB11', 'series-title': "Proc. SSDM '91", 'first-page': '689', 'author': 'Nagamune', 'year': '1991'} / Proc. SSDM '91 by Nagamune (1991)

Dates

Type	When
Created	22 years, 10 months ago (Oct. 16, 2002, 1:17 p.m.)
Deposited	3 years, 2 months ago (June 21, 2022, 2:08 p.m.)
Indexed	1 year, 6 months ago (Feb. 3, 2024, 2:40 a.m.)
Issued	32 years, 9 months ago (Nov. 1, 1992)
Published	32 years, 9 months ago (Nov. 1, 1992)
Published Print	32 years, 9 months ago (Nov. 1, 1992)

Funders 0

None

BibTeX

@article{Nishioka_1992, title={Fabrication of InGaAs strained quantum wires using selective MOCVD growth on SiO2-patterned GaAs substrate}, volume={124}, ISSN={0022-0248}, url={http://dx.doi.org/10.1016/0022-0248(92)90507-f}, DOI={10.1016/0022-0248(92)90507-f}, number={1–4}, journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Nishioka, M. and Tsukamoto, S. and Nagamune, Y. and Tanaka, T. and Arakawa, Y.}, year={1992}, month=nov, pages={502–506} }

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