DOI: 10.1016/0022-0248(89)90354-0. Anisotropic surface migration of Ga atoms on GaAs (001)

Anisotropic surface migration of Ga atoms on GaAs (001)

10.1016/0022-0248(89)90354-0

Crossref journal-article

Elsevier BV

Journal of Crystal Growth (78)

Bibliography

Ohta, K., Kojima, T., & Nakagawa, T. (1989). Anisotropic surface migration of Ga atoms on GaAs (001). Journal of Crystal Growth, 95(1â4), 71â74.

Authors 3

Kimihiro Ohta (first)
Takeshi Kojima (additional)
Tadashi Nakagawa (additional)

References 8 Referenced 182

10.1007/BF00617180 / Appl. Phys. by Neave (1983)
10.1143/JJAP.23.L657 / Japan. J. Appl. Phys. by Sakamoto (1983)
10.1063/1.96281 / Appl. Phys. Letters by Neave (1985)
{'key': '10.1016/0022-0248(89)90354-0_BIB4', 'first-page': '57', 'volume': '8', 'author': 'Kojima', 'year': '1987', 'journal-title': 'Hyomen Kagaku (J. Surface Sci. Soc. Japan)'} / Hyomen Kagaku (J. Surface Sci. Soc. Japan) by Kojima (1987)
10.1016/0022-0248(87)90357-5 / J. Crystal Growth by Van Hove (1987)
T. Nishinaga, T. Shitara and K.I. Cho, in: Record 7th Alloy Semiconductor Physics and Electronics Symp., Kyoto, March 1988, p. 57.
10.1063/1.323712 / J. Appl. Phys. by Nagata (1977)
{'key': '10.1016/0022-0248(89)90354-0_BIB8', 'first-page': '33', 'volume': '8', 'author': 'Kojima', 'year': '1987', 'journal-title': 'Hyomen Kagaku (J. Surface Sci. Soc. Japan)'} / Hyomen Kagaku (J. Surface Sci. Soc. Japan) by Kojima (1987)

Dates

Type	When
Created	22 years, 10 months ago (Oct. 16, 2002, 2:09 p.m.)
Deposited	6 years, 4 months ago (April 7, 2019, 8:52 p.m.)
Indexed	2 weeks, 3 days ago (Aug. 20, 2025, 8:46 a.m.)
Issued	36 years, 7 months ago (Feb. 1, 1989)
Published	36 years, 7 months ago (Feb. 1, 1989)
Published Print	36 years, 7 months ago (Feb. 1, 1989)

Funders 0

None

BibTeX

@article{Ohta_1989, title={Anisotropic surface migration of Ga atoms on GaAs (001)}, volume={95}, ISSN={0022-0248}, url={http://dx.doi.org/10.1016/0022-0248(89)90354-0}, DOI={10.1016/0022-0248(89)90354-0}, number={1–4}, journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Ohta, Kimihiro and Kojima, Takeshi and Nakagawa, Tadashi}, year={1989}, month=feb, pages={71–74} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        8,
        20
      ]
    ],
    "date-time": "2025-08-20T12:46:44Z",
    "timestamp": 1755694004645
  },
  "reference-count": 8,
  "publisher": "Elsevier BV",
  "issue": "1-4",
  "license": [
    {
      "start": {
        "date-parts": [
          [
            1989,
            2,
            1
          ]
        ],
        "date-time": "1989-02-01T00:00:00Z",
        "timestamp": 602294400000
      },
      "content-version": "tdm",
      "delay-in-days": 0,
      "URL": "https://www.elsevier.com/tdm/userlicense/1.0/"
    }
  ],
  "content-domain": {
    "domain": [],
    "crossmark-restriction": false
  },
  "published-print": {
    "date-parts": [
      [
        1989,
        2
      ]
    ]
  },
  "DOI": "10.1016/0022-0248(89)90354-0",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2002,
        10,
        16
      ]
    ],
    "date-time": "2002-10-16T18:09:35Z",
    "timestamp": 1034791775000
  },
  "page": "71-74",
  "source": "Crossref",
  "is-referenced-by-count": 182,
  "title": "Anisotropic surface migration of Ga atoms on GaAs (001)",
  "prefix": "10.1016",
  "volume": "95",
  "author": [
    {
      "given": "Kimihiro",
      "family": "Ohta",
      "sequence": "first",
      "affiliation": []
    },
    {
      "given": "Takeshi",
      "family": "Kojima",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "Tadashi",
      "family": "Nakagawa",
      "sequence": "additional",
      "affiliation": []
    }
  ],
  "member": "78",
  "reference": [
    {
      "key": "10.1016/0022-0248(89)90354-0_BIB1",
      "doi-asserted-by": "crossref",
      "first-page": "1",
      "DOI": "10.1007/BF00617180",
      "volume": "A31",
      "author": "Neave",
      "year": "1983",
      "journal-title": "Appl. Phys."
    },
    {
      "key": "10.1016/0022-0248(89)90354-0_BIB2",
      "doi-asserted-by": "crossref",
      "first-page": "L657",
      "DOI": "10.1143/JJAP.23.L657",
      "volume": "23",
      "author": "Sakamoto",
      "year": "1983",
      "journal-title": "Japan. J. Appl. Phys."
    },
    {
      "key": "10.1016/0022-0248(89)90354-0_BIB3",
      "doi-asserted-by": "crossref",
      "first-page": "100",
      "DOI": "10.1063/1.96281",
      "volume": "47",
      "author": "Neave",
      "year": "1985",
      "journal-title": "Appl. Phys. Letters"
    },
    {
      "key": "10.1016/0022-0248(89)90354-0_BIB4",
      "first-page": "57",
      "volume": "8",
      "author": "Kojima",
      "year": "1987",
      "journal-title": "Hyomen Kagaku (J. Surface Sci. Soc. Japan)"
    },
    {
      "key": "10.1016/0022-0248(89)90354-0_BIB5",
      "doi-asserted-by": "crossref",
      "first-page": "13",
      "DOI": "10.1016/0022-0248(87)90357-5",
      "volume": "81",
      "author": "Van Hove",
      "year": "1987",
      "journal-title": "J. Crystal Growth"
    },
    {
      "key": "10.1016/0022-0248(89)90354-0_BIB6",
      "unstructured": "T. Nishinaga, T. Shitara and K.I. Cho, in: Record 7th Alloy Semiconductor Physics and Electronics Symp., Kyoto, March 1988, p. 57."
    },
    {
      "key": "10.1016/0022-0248(89)90354-0_BIB7",
      "doi-asserted-by": "crossref",
      "first-page": "940",
      "DOI": "10.1063/1.323712",
      "volume": "48",
      "author": "Nagata",
      "year": "1977",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "10.1016/0022-0248(89)90354-0_BIB8",
      "first-page": "33",
      "volume": "8",
      "author": "Kojima",
      "year": "1987",
      "journal-title": "Hyomen Kagaku (J. Surface Sci. Soc. Japan)"
    }
  ],
  "container-title": "Journal of Crystal Growth",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://api.elsevier.com/content/article/PII:0022024889903540?httpAccept=text/xml",
      "content-type": "text/xml",
      "content-version": "vor",
      "intended-application": "text-mining"
    },
    {
      "URL": "https://api.elsevier.com/content/article/PII:0022024889903540?httpAccept=text/plain",
      "content-type": "text/plain",
      "content-version": "vor",
      "intended-application": "text-mining"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2019,
        4,
        8
      ]
    ],
    "date-time": "2019-04-08T00:52:16Z",
    "timestamp": 1554684736000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://linkinghub.elsevier.com/retrieve/pii/0022024889903540"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1989,
        2
      ]
    ]
  },
  "references-count": 8,
  "journal-issue": {
    "issue": "1-4",
    "published-print": {
      "date-parts": [
        [
          1989,
          2
        ]
      ]
    }
  },
  "alternative-id": [
    "0022024889903540"
  ],
  "URL": "http://dx.doi.org/10.1016/0022-0248(89)90354-0",
  "relation": {},
  "ISSN": [
    "0022-0248"
  ],
  "subject": [],
  "container-title-short": "Journal of Crystal Growth",
  "published": {
    "date-parts": [
      [
        1989,
        2
      ]
    ]
  }
}