DOI: 10.1016/0022-0248(89)90301-1. Facet growth of AlGaAs on GaAs with SiO2 gratings by MOCVD and applications to quantum well wires

Facet growth of AlGaAs on GaAs with SiO2 gratings by MOCVD and applications to quantum well wires

10.1016/0022-0248(89)90301-1

Crossref journal-article

Elsevier BV

Journal of Crystal Growth (78)

Bibliography

Ando, S., & Fukui, T. (1989). Facet growth of AlGaAs on GaAs with SiO2 gratings by MOCVD and applications to quantum well wires. Journal of Crystal Growth, 98(4), 646â652.

Authors 2

Seigo Ando (first)
Takashi Fukui (additional)

References 17 Referenced 72

10.1143/JJAP.19.L735 / Japan. J. Appl. Phys. by Sakaki (1980)
10.1063/1.97232 / Appl. Phys. Letters by Yuh (1986)
{'key': '10.1016/0022-0248(89)90301-1_BIB3', 'first-page': '1807', 'volume': '53', 'author': 'Tokura', 'year': '1988', 'journal-title': 'Appl. Phys. Letters'} / Appl. Phys. Letters by Tokura (1988)
10.1016/0749-6036(86)90050-9 / Superlattices and Microstructures by Bernstein (1986)
10.1109/EDL.1985.26130 / IEEE Electron Device Letters EDL-6 by Warren (1985)
10.1103/PhysRevLett.56.1198 / Phys. Rev. Letters by Thornton (1986)
10.1016/0039-6028(86)90931-3 / Surface Sci. by Skocpol (1986)
10.1103/PhysRevB.32.5540 / Phys. Rev. by Choi (1985)
10.1143/JJAP.24.L516 / Japan. J. Appl. Phys. by Hirayama (1985)
10.1063/1.97384 / Appl. Phys. Letters by Cibert (1986)
10.1063/1.93610 / Appl. Phys. Letters by Petroff (1982)
10.1063/1.98621 / Appl. Phys. Letters by Asai (1987)
{'key': '10.1016/0022-0248(89)90301-1_BIB13', 'first-page': '631', 'author': 'Fukai', 'year': '1988', 'journal-title': 'Proc. SSDM-20'} / Proc. SSDM-20 by Fukai (1988)
10.1016/0022-0248(86)90317-9 / J. Crystal Growth by Hersee (1986)
10.1016/0022-0248(87)90091-1 / J. Crystal Growth by Asai (1987)
10.1016/0022-0248(87)90119-9 / J. Crystal Growth by Kamon (1987)
10.1049/el:19890282 / Electron. Letters by Fukui (1989)

Dates

Type	When
Created	22 years, 10 months ago (Oct. 16, 2002, 1:52 p.m.)
Deposited	6 years, 4 months ago (April 7, 2019, 7:54 p.m.)
Indexed	11 months, 3 weeks ago (Sept. 15, 2024, 9:08 p.m.)
Issued	35 years, 9 months ago (Dec. 1, 1989)
Published	35 years, 9 months ago (Dec. 1, 1989)
Published Print	35 years, 9 months ago (Dec. 1, 1989)

Funders 0

None

BibTeX

@article{Ando_1989, title={Facet growth of AlGaAs on GaAs with SiO2 gratings by MOCVD and applications to quantum well wires}, volume={98}, ISSN={0022-0248}, url={http://dx.doi.org/10.1016/0022-0248(89)90301-1}, DOI={10.1016/0022-0248(89)90301-1}, number={4}, journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Ando, Seigo and Fukui, Takashi}, year={1989}, month=dec, pages={646–652} }

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