Crossref
journal-article
Elsevier BV
Journal of Crystal Growth (78)
References
11
Referenced
9
10.1063/1.93970
/ Appl. Phys. Letters by Nishino (1983)10.1016/0022-0248(84)90275-6
/ J. Crystal Growth by Suzuki (1984)10.1063/1.94973
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/ Appl. Phys. Letters by Furukawa (1986)10.1109/EDL.1986.26417
/ IEEE Electron Device Letters by Kondo (1986)10.1109/EDL.1987.26547
/ IEEE Electron Device Letters by Furukawa (1987)10.1109/EDL.1986.26522
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/ Appl. Phys. Letters by Nutt (1987)10.1063/1.97676
/ Appl. Phys. Letters by Shibahara (1987)10.1063/1.97767
/ Appl. Phys. Letters by Shigeta (1987){'key': '10.1016/0022-0248(88)90617-3_BIB11', 'series-title': 'Proc. 1988 Spring Meeting of Materials Research Society', 'author': 'Fujii', 'year': '1988'}
/ Proc. 1988 Spring Meeting of Materials Research Society by Fujii (1988)
Dates
Type | When |
---|---|
Created | 22 years, 10 months ago (Oct. 16, 2002, 2:09 p.m.) |
Deposited | 6 years, 4 months ago (April 7, 2019, 8:27 p.m.) |
Indexed | 1 year, 6 months ago (Feb. 2, 2024, 7:38 p.m.) |
Issued | 37 years, 7 months ago (Jan. 1, 1988) |
Published | 37 years, 7 months ago (Jan. 1, 1988) |
Published Print | 37 years, 7 months ago (Jan. 1, 1988) |
@article{Shigeta_1988, title={Inclined-epitaxy of β-SiC on Si(n11) substrates (n = 3, 4, 5, 6) by chemical vapor deposition}, volume={93}, ISSN={0022-0248}, url={http://dx.doi.org/10.1016/0022-0248(88)90617-3}, DOI={10.1016/0022-0248(88)90617-3}, number={1–4}, journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Shigeta, M. and Fujii, Y. and Ogura, A. and Furukawa, K. and Suzuki, A. and Nakajima, S.}, year={1988}, pages={766–770} }