DOI: 10.1016/0022-0248(85)90016-8. Vapor phase epitaxial growth of high purity InGaAs, InP and InGaAs/InP multilayer structures

Vapor phase epitaxial growth of high purity InGaAs, InP and InGaAs/InP multilayer structures

10.1016/0022-0248(85)90016-8

Crossref journal-article

Elsevier BV

Journal of Crystal Growth (78)

Bibliography

Cox, H. M., Koza, M. A., Keramidas, V. G., & Young, M. S. (1985). Vapor phase epitaxial growth of high purity InGaAs, InP and InGaAs/InP multilayer structures. Journal of Crystal Growth, 73(3), 523â528.

Authors 4

H.M. Cox (first)
M.A. Koza (additional)
V.G. Keramidas (additional)
M.S. Young (additional)

References 22 Referenced 21

10.1109/EDL.1980.25249 / IEEE Electron Device Letters by Leheny (1980)
10.1063/1.94670 / Appl. Phys. Letters by Chen (1984)
10.1007/BF02652891 / J. Elektron. Mater. by Oliver (1980)
10.1143/JJAP.20.2105 / Japan. J. Appl. Phys. by Amano (1981)
{'key': '10.1016/0022-0248(85)90016-8_BIB5', 'series-title': 'Proc. 10th Intern. Symp. on GaAs and Related Compounds', 'first-page': '133', 'volume': '65', 'author': 'Cox', 'year': '1983'} / Proc. 10th Intern. Symp. on GaAs and Related Compounds by Cox (1983)
10.1016/0022-0248(72)90247-3 / J. Crystal Growth by DiLorenzo (1972)
10.1143/JJAP.14.184 / Japan. J. Appl. Phys. by Mizuno (1975)
{'key': '10.1016/0022-0248(85)90016-8_BIB8', 'series-title': 'Proc. North American Conf. on GaAs and Related Compounds', 'first-page': '45', 'volume': '33b', 'author': 'Fairman', 'year': '1977'} / Proc. North American Conf. on GaAs and Related Compounds by Fairman (1977)
10.1016/0022-0248(71)90032-7 / J. Crystal Growth by Shaw (1971)
10.1149/1.2424100 / J. Electrochemical Soc. by Tietjan (1966)
{'key': '10.1016/0022-0248(85)90016-8_BIB11', 'first-page': '309', 'volume': 'Vol. 2', 'author': 'Olsen', 'year': '1979'} by Olsen (1979)
10.1143/JJAP.20.L253 / Japan. J. Appl. Phys. by Susa (1981)
10.1143/JJAP.19.L113 / Japan. J. Appl. Phys. by Mitzutani (1980)
10.1049/el:19830321 / Electron. Letters by Komeno (1983)
M.S. Young, R. Caruso and J.M. Parsey, Jr., to be published.
10.1016/0022-0248(81)90485-1 / J. Crystal Growth by Chevrier (1981)
10.1109/T-ED.1972.17557 / IEEE Trans. Electron Devices by Miller (1972)
10.1063/1.1683777 / Rev. Sci. Instr. by Hammer (1969)
10.1063/1.90575 / Appl. Phys. Letters by Bisaro (1979)
{'key': '10.1016/0022-0248(85)90016-8_BIB20', 'first-page': '1', 'volume': '13', 'author': 'van der Pauw', 'year': '1958', 'journal-title': 'Philips Res. Rept.'} / Philips Res. Rept. by van der Pauw (1958)
10.1109/EDL.1981.25434 / IEEE Trans. Electron Device Letters by Forrest (1981)
{'key': '10.1016/0022-0248(85)90016-8_BIB22', 'series-title': 'IEEE Intern. Electron Device Meeting', 'author': 'Brown', 'year': '1984'} / IEEE Intern. Electron Device Meeting by Brown (1984)

Dates

Type	When
Created	22 years, 10 months ago (Oct. 16, 2002, 10:09 a.m.)
Deposited	6 years, 4 months ago (April 7, 2019, 3:23 p.m.)
Indexed	1 year, 5 months ago (March 4, 2024, 12:20 p.m.)
Issued	39 years, 8 months ago (Dec. 1, 1985)
Published	39 years, 8 months ago (Dec. 1, 1985)
Published Print	39 years, 8 months ago (Dec. 1, 1985)

Funders 0

None

BibTeX

@article{Cox_1985, title={Vapor phase epitaxial growth of high purity InGaAs, InP and InGaAs/InP multilayer structures}, volume={73}, ISSN={0022-0248}, url={http://dx.doi.org/10.1016/0022-0248(85)90016-8}, DOI={10.1016/0022-0248(85)90016-8}, number={3}, journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Cox, H.M. and Koza, M.A. and Keramidas, V.G. and Young, M.S.}, year={1985}, month=dec, pages={523–528} }

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