DOI: 10.1016/0022-0248(81)90397-3. Microdefects in silicon and their relation to point defects

Microdefects in silicon and their relation to point defects

10.1016/0022-0248(81)90397-3

Crossref journal-article

Elsevier BV

Journal of Crystal Growth (78)

Bibliography

FÃ¶ll, H., GÃ¶sele, U., & Kolbesen, B. O. (1981). Microdefects in silicon and their relation to point defects. Journal of Crystal Growth, 52, 907â916.

Authors 3

H. Föll (first)
U. Gösele (additional)
B.O. Kolbesen (additional)

References 37 Referenced 37

{'key': '10.1016/0022-0248(81)90397-3_BIB1', 'first-page': '809', 'volume': '233', 'author': 'Plaskett', 'year': '1965', 'journal-title': 'Trans. Met. Soc. AIME'} / Trans. Met. Soc. AIME by Plaskett (1965)
{'key': '10.1016/0022-0248(81)90397-3_BIB2', 'first-page': '662', 'article-title': '1976 Crystal Growth and Materials', 'author': 'de Kock', 'year': '1977'} / 1976 Crystal Growth and Materials by de Kock (1977)
10.1116/1.569117 / J. Vacuum Sci. Technol. by Hu (1977)
10.7567/JJAPS.18S1.153 / Japan. J. Appl. Phys. by Chikawa (1979)
10.1016/0022-0248(75)90210-9 / J. Crystal Growth by Petroff (1975)
10.1007/BF00898366 / Appl. Phys. by Föll (1975)
10.1002/pssb.19680290202 / Phys. Status Solidi by Seeger (1968)
10.1080/00337577108242025 / Radiation Effects by Seeger (1971)
{'key': '10.1016/0022-0248(81)90397-3_BIB9', 'first-page': '262', 'article-title': 'Radiation Damage and Defects in Semiconductors', 'author': 'Seeger', 'year': '1972'} / Radiation Damage and Defects in Semiconductors by Seeger (1972)
{'key': '10.1016/0022-0248(81)90397-3_BIB10', 'first-page': '23', 'article-title': 'Lattice Defects in Semiconductors', 'author': 'Frank', 'year': '1975', 'journal-title': 'Inst. Phys. Conf. Ser. No. 23'} / Inst. Phys. Conf. Ser. No. 23 / Lattice Defects in Semiconductors by Frank (1975)
{'key': '10.1016/0022-0248(81)90397-3_BIB11', 'first-page': '12', 'article-title': 'Radiation Effects in Semiconductors', 'author': 'Seeger', 'year': '1977', 'journal-title': 'Inst. Phys. Conf. Ser. No. 31'} / Inst. Phys. Conf. Ser. No. 31 / Radiation Effects in Semiconductors by Seeger (1977)
{'issue': 'Suppl. No. 1', 'key': '10.1016/0022-0248(81)90397-3_BIB12', 'author': 'de Kock', 'year': '1973', 'journal-title': 'Philips Res. Rept.'} / Philips Res. Rept. by de Kock (1973)
10.1016/0022-0248(74)90176-6 / J. Crystal Growth by de Kock (1974)
{'key': '10.1016/0022-0248(81)90397-3_BIB14', 'first-page': '83', 'article-title': 'Semiconductor Silicon', 'author': 'de Kock', 'year': '1973'} / Semiconductor Silicon by de Kock (1973)
10.1016/0022-0248(77)90034-3 / J. Crystal Growth by Föll (1977)
{'key': '10.1016/0022-0248(81)90397-3_BIB16', 'first-page': '508', 'article-title': 'Semiconductor Silicon', 'author': 'de Kock', 'year': '1977'} / Semiconductor Silicon by de Kock (1977)
{'key': '10.1016/0022-0248(81)90397-3_BIB17', 'first-page': '565', 'article-title': 'Semiconductor Silicon', 'author': 'Föll', 'year': '1977'} / Semiconductor Silicon by Föll (1977)
10.1016/0022-0248(76)90179-2 / J. Crystal Growth by Roksnoer (1976)
10.1063/1.90863 / Appl. Phys. Letters by de Kock (1979)
10.1007/BF00894994 / Appl. Phys. by Gösele (1979)
10.1063/1.1728875 / J. Appl. Phys. by Webb (1962)
10.1016/0022-0248(76)90241-4 / J. Crystal Growth by Fletcher (1976)
10.1149/1.2426720 / J. Electrochem. Soc. by Morizane (1967)
10.1016/0022-0248(77)90282-2 / J. Crystal Growth by Chikawa (1977)
10.1063/1.88006 / Appl. Phys. Letters by Van Vechten (1975)
10.1016/0022-0248(76)90201-3 / J. Crystal Growth by Matthews (1976)
10.1116/1.569410 / J. Vacuum Sci. Technol. by Van Vechten (1977)
10.1103/PhysRevB.17.3197 / Phys. Rev. by Van Vechten (1978)
10.1116/1.570139 / J. Vacuum Sci. Technol. by Snyder (1979)
10.1116/1.570140 / J. Vacuum Sci. Technol. by Miller (1979)
{'key': '10.1016/0022-0248(81)90397-3_BIB31', 'first-page': '4', 'article-title': 'Semiconductor Silicon', 'author': 'Sirtl', 'year': '1977'} / Semiconductor Silicon by Sirtl (1977)
10.1080/14786437308226889 / Phil. Mag. by Matthews (1973)
10.1063/1.326051 / J. Appl. Phys. by Kim (1979)
10.1149/1.2132791 / J. Electrochem. Soc. by Murgai (1976)
10.1103/PhysRevB.12.1247 / Phys. Rev. by van Vechten (1975)
{'issue': 'Suppl. II', 'key': '10.1016/0022-0248(81)90397-3_BIB36', 'first-page': '22', 'volume': '18', 'author': 'Watkins', 'year': '1963', 'journal-title': 'J. Phys. Soc. Japan'} / J. Phys. Soc. Japan by Watkins (1963)
10.1063/1.325885 / J. Appl. Phys. by Yasuami (1979)

Dates

Type	When
Created	22 years, 10 months ago (Oct. 16, 2002, 2:46 p.m.)
Deposited	6 years, 4 months ago (April 7, 2019, 6:54 p.m.)
Indexed	4 weeks, 1 day ago (Aug. 7, 2025, 4:39 p.m.)
Issued	44 years, 5 months ago (April 1, 1981)
Published	44 years, 5 months ago (April 1, 1981)
Published Print	44 years, 5 months ago (April 1, 1981)

Funders 0

None

BibTeX

@article{F_ll_1981, title={Microdefects in silicon and their relation to point defects}, volume={52}, ISSN={0022-0248}, url={http://dx.doi.org/10.1016/0022-0248(81)90397-3}, DOI={10.1016/0022-0248(81)90397-3}, journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Föll, H. and Gösele, U. and Kolbesen, B.O.}, year={1981}, month=apr, pages={907–916} }

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