DOI: 10.1016/0022-0248(72)90184-4. Vapor epitaxy of gallium nitride

Vapor epitaxy of gallium nitride

10.1016/0022-0248(72)90184-4

Crossref journal-article

Elsevier BV

Journal of Crystal Growth (78)

Bibliography

Ilegems, M. (1972). Vapor epitaxy of gallium nitride. Journal of Crystal Growth, 13â14, 360â364.

Authors 1

M Ilegems (first)

References 14 Referenced 97

10.1103/PhysRevB.4.1211 / Phys. Rev. B by Dingle (1971)
10.1063/1.1653363 / Appl. Phys. Letters by Pankove (1970)
10.1063/1.1653730 / Appl. Phys. Letters by Dingle (1971)
10.1007/BF02403284 / J. Mater. Sci. by Zetterstrom (1970)
10.1063/1.1652845 / Appl. Phys. Letters by Maruska (1969)
10.1016/0022-0248(71)90225-9 / J. Crystal Growth by Wickenden (1971)
10.1116/1.1315693 / J. Vacuum Sci. Technol. by Kosicki (1969)
10.1063/1.1695924 / J. Chem. Phys. by Munir (1965)
10.1021/j100894a035 / J. Phys. Chem. by Schoonmaker (1965)
Nominal minimum purities of materials and gases: Ga: 99.9999%, HCl: 99.99%, NH3: 99.999%, He: 99.995 to 99.999%. The He gas is purified before use by passage through a 77 K cold trap.
10.1016/0038-1098(71)90112-8 / Solid State Commun. by Dingle (1975)
{'key': '10.1016/0022-0248(72)90184-4_BIB12', 'article-title': 'JANAF Thermochemical Tables', 'year': '1965', 'journal-title': 'U.S. Dept. Commerce Document PB168370'} / U.S. Dept. Commerce Document PB168370 / JANAF Thermochemical Tables (1965)
{'key': '10.1016/0022-0248(72)90184-4_BIB13', 'author': 'Wagman', 'year': '1968', 'journal-title': 'National Bureau of Standards Technical Note 270-3'} / National Bureau of Standards Technical Note 270-3 by Wagman (1968)
{'key': '10.1016/0022-0248(72)90184-4_BIB14', 'volume': '584', 'author': 'Kelley', 'year': '1960', 'journal-title': 'U.S. Bureau of Mines Bulletin'} / U.S. Bureau of Mines Bulletin by Kelley (1960)

Dates

Type	When
Created	22 years, 7 months ago (Jan. 17, 2003, 1:39 p.m.)
Deposited	6 years, 9 months ago (Nov. 14, 2018, 8:53 a.m.)
Indexed	1 year, 2 months ago (July 4, 2024, 6:11 p.m.)
Issued	53 years, 4 months ago (May 1, 1972)
Published	53 years, 4 months ago (May 1, 1972)
Published Print	53 years, 4 months ago (May 1, 1972)

Funders 0

None

BibTeX

@article{Ilegems_1972, title={Vapor epitaxy of gallium nitride}, volume={13–14}, ISSN={0022-0248}, url={http://dx.doi.org/10.1016/0022-0248(72)90184-4}, DOI={10.1016/0022-0248(72)90184-4}, journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Ilegems, M}, year={1972}, month=may, pages={360–364} }

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