Crossref journal-article
Tsinghua University Press
Nano Research (11138)
Bibliography

Kobayashi, Y., Mori, S., Maniwa, Y., & Miyata, Y. (2015). Bandgap-tunable lateral and vertical heterostructures based on monolayer Mo1-x W x S2 alloys. Nano Research, 8(10), 3261–3271.

Authors 4
  1. Yu Kobayashi (first)
  2. Shohei Mori (additional)
  3. Yutaka Maniwa (additional)
  4. Yasumitsu Miyata (additional)
References 38 Referenced 56
  1. Geim, A. K.; Grigorieva, I. V. Van der Waals heterostructures. Nature 2013, 499, 419–425. (10.1038/nature12385) / Nature by A. K. Geim (2013)
  2. Dean, C. R.; Young, A. F.; Meric, I; Lee, C.; Wang, L.; Sorgenfrei, S.; Watanabe, K.; Taniguchi, T.; Kim, P.; Shepard, K. L. et al. Boron nitride substrates for high-quality graphene electronics. Nat. Nanotechnol. 2010, 5, 722–726. (10.1038/nnano.2010.172) / Nat. Nanotechnol. by C. R. Dean (2010)
  3. Dean, C.; Young, A. F.; Wang, L.; Meric, I.; Lee, G.-H.; Watanabe, K.; Taniguchi, T.; Shepard, K.; Kim, P.; Hone, J. Graphene based heterostructures. Solid State Commun. 2012, 152, 1275–1282. (10.1016/j.ssc.2012.04.021) / Solid State Commun. by C. Dean (2012)
  4. Georgiou, T.; Jalil, R.; Belle, B. D.; Britnell, L.; Gorbachev, R. V.; Morozov, S. V.; Kim, Y.-J.; Gholinia, A.; Haigh, S. J.; Makarovsky, O. et al. Vertical field-effect transistor based on graphene-WS2 heterostructures for flexible and transparent electronics. Nat. Nanotechnol. 2013, 8, 100–103. (10.1038/nnano.2012.224) / Nat. Nanotechnol. by T. Georgiou (2013)
  5. Wang, Q. H.; Kalantar-Zadeh, K.; Kis, A.; Coleman, J. N.; Strano, M. S. Electronics and optoelectronics of twodimensional transition metal dichalcogenides. Nat. Nanotechnol. 2012, 7, 699–712. (10.1038/nnano.2012.193) / Nat. Nanotechnol. by Q. H. Wang (2012)
  6. Lee, G.-H.; Yu, Y.-J.; Cui, X.; Petrone, N.; Lee, C.-H.; Choi, M. S.; Lee, D.-Y.; Lee, C.; Yoo, W. J.; Watanabe, K. et al. Flexible and transparent MoS2 field-effect transistors on hexagonal boron nitride-graphene heterostructures. ACS Nano 2013, 7, 7931–7936. (10.1021/nn402954e) / ACS Nano by G.-H. Lee (2013)
  7. Wang, L.; Meric, I.; Huang, P. Y.; Gao, Q.; Gao, Y.; Tran, H.; Taniguchi, T.; Watanabe, K.; Campos, L. M.; Muller, D. A. et al. One-dimensional electrical contact to a two-dimensional material. Science 2013, 342, 614–617. (10.1126/science.1244358) / Science by L. Wang (2013)
  8. Gorbachev, R. V.; Song, J. C. W.; Yu, G. L.; Kretinin, A. V.; Withers, F.; Cao, Y.; Mishchenko, A.; Grigorieva, I. V.; Novoselov, K. S.; Levitov, L. S. et al. Detecting topological currents in graphene superlattices. Science 2014, 346, 448–451. (10.1126/science.1254966) / Science by R. V. Gorbachev (2014)
  9. Roy, K.; Padmanabhan, M.; Goswami, S.; Sai, T. P.; Ramalingam, G.; Raghavan, S.; Ghosh, A. Graphene-MoS2 hybrid structures for multifunctional photoresponsive memory devices. Nat. Nanotechnol. 2013, 8, 826–830. (10.1038/nnano.2013.206) / Nat. Nanotechnol. by K. Roy (2013)
  10. Hunt, B.; Sanchez-Yamagishi, J. D.; Young, A. F.; Yankowitz, M.; LeRoy, B. J.; Watanabe, K.; Taniguchi, T.; Moon, P.; Koshino, M.; Jarillo-Herrero, P. et al. Massive dirac fermions and hofstadter butterfly in a van der Waals heterostructure. Science 2013, 340, 1427–1430. (10.1126/science.1237240) / Science by B. Hunt (2013)
  11. Yu, Y. F.; Hu, S.; Su, L. Q.; Huang, L. J.; Liu, Y.; Jin, Z. H.; Purezky, A. A.; Geohegan, D. B.; Kim, K. W.; Zhang, Y. et al. Equally efficient interlayer exciton relaxation and improved absorption in epitaxial and nonepitaxial MoS2/WS2 heterostructures. Nano Lett. 2015, 15, 486–491. (10.1021/nl5038177) / Nano Lett. by Y. F. Yu (2015)
  12. Levendorf, M. P.; Kim, C.-J.; Brown, L.; Huang, P. Y.; Havener, R. W.; Muller, D. A.; Park, J. Graphene and boron nitride lateral heterostructures for atomically thin circuitry. Nature 2012, 488, 627–632. (10.1038/nature11408) / Nature by M. P. Levendorf (2012)
  13. Sutter, P.; Cortes, R.; Lahiri, J.; Sutter, E. Interface formation in monolayer graphene-boron nitride heterostructures. Nano Lett. 2012, 12, 4869–4874. (10.1021/nl302398m) / Nano Lett. by P. Sutter (2012)
  14. Miyata, Y.; Maeda, E.; Kamon, K.; Kitaura, R.; Sasaki, Y.; Suzuki, S.; Shinohara, H. Fabrication and characterization of graphene/hexagonal boron nitride hybrid sheets. Appl. Phys. Express 2012, 5, 085102. (10.1143/APEX.5.085102) / Appl. Phys. Express by Y. Miyata (2012)
  15. Liu, Z.; Ma, L. L.; Shi, G.; Zhou, W.; Gong, Y. J.; Lei, S. D.; Yang, X. B.; Zhang, J. N.; Yu, J. J.; Hackenberg, K. P. et al. In-plane heterostructures of graphene and hexagonal boron nitride with controlled domain sizes. Nat. Nanotechnol. 2013, 8, 119–124. (10.1038/nnano.2012.256) / Nat. Nanotechnol. by Z. Liu (2013)
  16. Liu, L.; Park, J.; Siegel, D. A.; McCarty, K. F.; Clark, K. W.; Deng, W.; Basile, L.; Idrobo, J. C.; Li, A.-P.; Gu, G. Heteroepitaxial growth of two-dimensional hexagonal boron nitride templated by graphene edges. Science 2014, 343, 163–167. (10.1126/science.1246137) / Science by L. Liu (2014)
  17. Han, G. H.; Rodrí guez-Manzo, J. A.; Lee, C.-W.; Kybert, N. J.; Lerner, M. B.; Qi, Z. J.; Dattoli, E. N.; Rappe, A. M.; Drndic, M.; Johnson, A. T. C. Continuous growth of hexagonal graphene and boron nitride in-plane heterostructures by atmospheric pressure chemical vapor deposition. ACS Nano 2013, 7, 10129–10138. (10.1021/nn404331f) / ACS Nano by G. H. R. Han (2013)
  18. Havener, R. W.; Kim, C.-J.; Brown, L.; Kevek, J. W.; Sleppy, J. D.; McEuen, P. L.; Park, J. Hyperspectral imaging of structure and composition in atomically thin heterostructures. Nano Lett. 2013, 13, 3942–3946. (10.1021/nl402062j) / Nano Lett. by R. W. Havener (2013)
  19. Gao, Y. B.; Zhang, Y. F.; Chen, P. C.; Li, Y. C.; Liu, M. X.; Gao, T.; Ma, D. L.; Chen, Y. B.; Cheng, Z. H.; Qiu, X. H. et al. Toward single-layer uniform hexagonal boron nitridegraphene patchworks with zigzag linking edges. Nano Lett. 2013, 13, 3439–3443. (10.1021/nl4021123) / Nano Lett. by Y. B. Gao (2013)
  20. Gong, Y. J.; Lin, J. H.; Wang, X. L.; Shi, G.; Lei, S. D.; Lin, Z.; Zou, X. L.; Ye, G. L.; Vajtai, R.; Yakobson, B. I. et al. Vertical and in-plane heterostructures from WS2/MoS2 monolayers. Nat. Mater. 2014, 13, 1135–1142. (10.1038/nmat4091) / Nat. Mater. by Y. J. Gong (2014)
  21. Duan, X. D.; Wang, C.; Shaw, J. C.; Cheng, R.; Chen, Y.; Li, H. L.; Wu, X. P.; Tang, Y.; Zhang, Q. L.; Pan, A. L. et al. Lateral epitaxial growth of two-dimensional layered semiconductor heterojunctions. Nat. Nanotechnol. 2014, 9, 1024–1030. (10.1038/nnano.2014.222) / Nat. Nanotechnol. by X. D. Duan (2014)
  22. Huang, C. M.; Wu, S. F.; Sanchez, A. M.; Peters, J. J. P.; Beanland, R.; Ross, J. S.; Rivera, P.; Yao, W.; Cobden, D. H.; Xu, X. D. Lateral heterojunctions within monolayer MoSe2/WSe2 semiconductors. Nat. Mater. 2014, 13, 1096–1101. (10.1038/nmat4064) / Nat. Mater. by C. M. Huang (2014)
  23. Zhang, X.-Q.; Lin, C.-H.; Tseng, Y.-W.; Huang, K.-H.; Lee, Y.-H. Synthesis of lateral heterostructures of semiconducting atomic layers. Nano Lett. 2015, 15, 410–415. (10.1021/nl503744f) / Nano Lett. by X.-Q. Zhang (2015)
  24. Chen, Y. F.; Xi, J. Y.; Dumcenco, D. O.; Liu, Z.; Suenaga, K.; Wang, D.; Shuai, Z. G.; Huang, Y.-S.; Xie, L. M. Tunable band gap photoluminescence from atomically thin transition-metal dichalcogenide alloys. ACS Nano 2013, 7, 4610–4616. (10.1021/nn401420h) / ACS Nano by Y. F. Chen (2013)
  25. Gong, Y. J.; Liu, Z.; Lupini, A. R.; Shi, G.; Lin, J. H.; Najmaei, S.; Lin, Z.; Elías, A. L.; Berkdemir, A.; You, G. et al. Band gap engineering and layer-by-layer mapping of selenium-doped molybdenum disulfide. Nano Lett. 2014, 14, 442–449. (10.1021/nl4032296) / Nano Lett. by Y. J. Gong (2014)
  26. Chen, Y. F.; Dumcenco, D. O.; Zhu, Y. M.; Zhang, X.; Mao, N. N.; Feng, Q. L.; Zhang, M.; Zhang, J.; Tan, P.-H.; Huang, Y.-S. et al. Composition-dependent raman modes of Mo1–x WxS2 monolayer alloys. Nanoscale 2013, 6, 2833–2839. (10.1039/C3NR05630A) / Nanoscale by Y. F. Chen (2013)
  27. Zhao, W. J.; Ghorannevis, Z.; Chu, L. Q.; Toh, M. L.; Kloc, C.; Tan, P.-H.; Eda, G. Evolution of electronic structure in atomically thin sheets of WS2 and WSe2. ACS Nano 2013, 7, 791–797. (10.1021/nn305275h) / ACS Nano by W. J. Zhao (2013)
  28. Mak, K. F.; Lee, C.; Hone, J.; Shan, J.; Heinz, T. F. Atomically thin MoS2: A new direct-gap semiconductor. Phys. Rev. Lett. 2010, 105, 136805. (10.1103/PhysRevLett.105.136805) / Phys. Rev. Lett. by K. F. Mak (2010)
  29. Splendiani, A.; Sun, L.; Zhang, Y. B.; Li, T. S.; Kim, J.; Chim, C.-Y.; Galli, G.; Wang, F. Emerging photoluminescence in monolayer MoS2. Nano Lett. 2010, 10, 1271–1275. (10.1021/nl903868w) / Nano Lett. by A. Splendiani (2010)
  30. Zhou, H. Q.; Yu, F.; Liu, Y. Y.; Zou, X. L.; Cong, C. X.; Qiu, C. Y.; Yu, T.; Yan, Z.; Shen, X. N.; Sun, L. F. et al. Thickness-dependent patterning of MoS2 sheets with welloriented triangular pits by heating in air. Nano Res. 2013, 6, 703–711. (10.1007/s12274-013-0346-2) / Nano Res. by H. Q. Zhou (2013)
  31. Tongay, S.; Suh, J.; Ataca, C.; Fan, W.; Luce, A.; Kang, J. S.; Liu, J.; Ko, C.; Raghunathanan, R.; Zhou, J. et al. Defects activated photoluminescence in two-dimensional semiconductors: Interplay between bound, charged, and free excitons. Sci. Rep. 2013, 3, 2657. (10.1038/srep02657) / Sci. Rep. by S. Tongay (2013)
  32. Bissett, M. A.; Konabe, S.; Okada, S.; Tsuji, M.; Ago, H. Enhanced chemical reactivity of graphene induced by mechanical strain. ACS Nano 2013, 7, 10335–10343. (10.1021/nn404746h) / ACS Nano by M. A. Bissett (2013)
  33. Kobayashi, Y.; Sasaki, S.; Mori, S.; Hibino, H.; Liu, Z.; Watanabe, K.; Taniguchi, T.; Suenaga, K.; Maniwa, Y.; Miyata, Y. Growth and optical properties of high-quality monolayer WS2 on graphite. ACS Nano 2015, 9, 4056–4063. (10.1021/acsnano.5b00103) / ACS Nano by Y. Kobayashi (2015)
  34. Orofeo, C. M.; Suzuki, S.; Sekine, Y.; Hibino, H. Scalable synthesis of layer-controlled WS2 and MoS2 sheets by sulfurization of thin metal films. Appl. Phys. Lett. 2014, 105, 083112. (10.1063/1.4893978) / Appl. Phys. Lett. by C. M. Orofeo (2014)
  35. Gutiérrez, H. R.; Perea-López, N.; Elí as, A. L.; Berkdemir, A.; Wang, B.; Lv, R. T.; López-Urías, F.; Crespi, V. H.; Terrones, H.; Terrones, M. Extraordinary room-temperature photoluminescence in triangular WS2 monolayers. Nano Lett. 2013, 13, 3447–3454. (10.1021/nl3026357) / Nano Lett. by H. R. Gutiérrez (2013)
  36. Chhowalla, M.; Shin, H. S.; Eda, G.; Li, L.-J.; Loh, K. P.; Zhang, H. The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets. Nat. Chem. 2013, 5, 263–275. (10.1038/nchem.1589) / Nat. Chem. by M. Chhowalla (2013)
  37. Yu, Q. K.; Jauregui, L. A.; Wu, W.; Colby, R.; Tian, J. F.; Su, Z. H.; Cao, H. L.; Liu, Z. H.; Pandey, D.; Wei, D. G. et al. Control and characterization of individual grains and grain boundaries in graphene grown by chemical vapour deposition. Nat. Mater. 2011, 10, 443–449. (10.1038/nmat3010) / Nat. Mater. by Q. K. Yu (2011)
  38. Ren, Y. J.; Zhu, C. F.; Cai, W. W.; Li, H. F.; Hao, Y. F.; Wu, Y. P.; Chen, S. S.; Wu, Q. Z.; Piner, R. D.; Ruoff, R. S. An improved method for transferring ggarphene grown by chemical vapor deposition. Nano 2012, 7, 1150001. (10.1142/S1793292011500019) / Nano by Y. J. Ren (2012)
Dates
Type When
Created 9 years, 11 months ago (Aug. 26, 2015, 12:44 a.m.)
Deposited 8 months, 1 week ago (Dec. 12, 2024, 6:11 p.m.)
Indexed 3 weeks, 6 days ago (July 27, 2025, 3:44 a.m.)
Issued 9 years, 11 months ago (Aug. 26, 2015)
Published 9 years, 11 months ago (Aug. 26, 2015)
Published Online 9 years, 11 months ago (Aug. 26, 2015)
Published Print 9 years, 10 months ago (Oct. 1, 2015)
Funders 0

None

@article{Kobayashi_2015, title={Bandgap-tunable lateral and vertical heterostructures based on monolayer Mo1-x W x S2 alloys}, volume={8}, ISSN={1998-0000}, url={http://dx.doi.org/10.1007/s12274-015-0826-7}, DOI={10.1007/s12274-015-0826-7}, number={10}, journal={Nano Research}, publisher={Tsinghua University Press}, author={Kobayashi, Yu and Mori, Shohei and Maniwa, Yutaka and Miyata, Yasumitsu}, year={2015}, month=aug, pages={3261–3271} }