Crossref
journal-article
Tsinghua University Press
Nano Research (11138)
References
38
Referenced
230
-
Novoselov, K. S.; Geim, A. K.; Morozov, S. V.; Jiang, D.; Zhang, Y.; Dubonos, S. V.; Grigorieva, I. V.; Firsov, A. A. Electric field effect in atomically thin carbon films. Science 2004, 306, 666–669.
(
10.1126/science.1102896
) / Science by K S Novoselov (2004) -
Geim, A. K.; Novoselov, K. S. The rise of graphene. Nat. Mater. 2007, 6, 183–191.
(
10.1038/nmat1849
) / Nat. Mater. by A K Geim (2007) -
Kubota, Y.; Watanabe, K.; Tsuda, O.; Taniguchi, T. Deep ultraviolet light-emitting hexagonal boron nitride synthesized at atmospheric pressure. Science 2007, 317, 932–934.
(
10.1126/science.1144216
) / Science by Y Kubota (2007) -
Mak, K. F.; Lee, C.; Hone, J.; Shan, J.; Heinz, T. F. Atomically thin MoS2: A new direct-gap semiconductor. Phys. Rev. Lett. 2010, 105, 136805.
(
10.1103/PhysRevLett.105.136805
) / Phys. Rev. Lett. by K F Mak (2010) -
Matte, H. S. S. R.; Gomathi, A.; Manna, A. K.; Late, D. J.; Datta, R.; Pati, S. K.; Rao, C. N. R. MoS2 and WS2 analogues of graphene. Angew. Chem. Int. Edit. 2010, 49, 4059–4062.
(
10.1002/anie.201000009
) / Angew. Chem. Int. Edit. by H S S R Matte (2010) -
Radisavljevic, B.; Radenovic, A.; Brivio, J.; Giacometti, V.; Kis, A. Single-layer MoS2 transistors. Nat. Nanotech 2011, 6, 147–150.
(
10.1038/nnano.2010.279
) / Nat. Nanotech by B Radisavljevic (2011) -
Huang, X.; Zeng, Z. Y.; Zhang, H. Metal dichalcogenide nanosheets: Preparation, properties and applications. Chem. Soc. Rev. 2013, 42, 1934–1946.
(
10.1039/c2cs35387c
) / Chem. Soc. Rev. by X Huang (2013) -
Bolotin, K. I.; Ghahari, F.; Shulman, M. D.; Stormer, H. L.; Kim, P. Observation of the fractional quantum Hall effect in graphene. Nature 2009, 462, 196–199.
(
10.1038/nature08582
) / Nature by K I Bolotin (2009) -
Dean, C. R.; Young, A. F.; Meric, I.; Lee, C.; Wang, L.; Sorgenfrei, S.; Watanabe, K.; Taniguchi, T.; Kim, P.; Shepard, K. L.; Hone, J. Boron nitride substrates for high-quality graphene electronics. Nat. Nanotech 2010, 5, 722–726.
(
10.1038/nnano.2010.172
) / Nat. Nanotech by C R Dean (2010) -
Zhang, H. J.; Liu, C. X.; Qi, X. L.; Dai, X.; Fang, Z.; Zhang, S. C. Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface. Nat. Phys. 2009, 5, 438–442.
(
10.1038/nphys1270
) / Nat. Phys. by H J Zhang (2009) -
Kong, D. S.; Randel, J. C.; Peng, H. L.; Cha, J. J.; Meister, S.; Lai, K. J.; Chen, Y. L.; Shen, Z. X.; Manoharan, H. C.; Cui, Y. Topological insulator nanowires and nanoribbons. Nano Lett. 2010, 10, 329–333.
(
10.1021/nl903663a
) / Nano Lett. by D S Kong (2010) -
Peng, H. L.; Lai, K. J.; Kong, D. S.; Meister, S.; Chen, Y. L.; Qi, X. L.; Zhang, S. C.; Shen, Z. X.; Cui, Y. Aharonov-Bohm interference in topological insulator nanoribbons. Nat. Mater. 2010, 9, 225–229.
(
10.1038/nmat2609
) / Nat. Mater. by H L Peng (2010) -
Chun, D.; Walser, R. M.; Bene, R. W.; Courtney, T. H. Polarity-dependent memory switching in devices with SnSe and SnSe2 crystals. Appl. Phys. Lett. 1974, 24, 479–481.
(
10.1063/1.1655019
) / Appl. Phys. Lett. by D Chun (1974) -
Agarwal, A.; Vashi, M. N.; Lakshminarayana, D.; Batra, N. M. Electrical resistivity anisotropy in layered p-SnSe single crystals. J. Mater. Sci-Mater. El. 2000, 11, 67–71.
(
10.1023/A:1008960305097
) / J. Mater. Sci-Mater. El. by A Agarwal (2000) -
Boscher, N. D.; Carmalt, C. J.; Palgrave, R. G.; Parkin, I. P. Atmospheric pressure chemical vapor deposition of SnSe and SnSe2 thin films on glass. Thin Solid Films 2008, 516, 4750–4757.
(
10.1016/j.tsf.2007.08.100
) / Thin Solid Films by N D Boscher (2008) -
Sumesh, C. K.; Patel, M.; Patel, K. D.; Solanki, G. K.; Pathak, V. M.; Srivastav, R. Low temperature electrical transport properties in p-SnSe single crystals. Eur. Phys. J-Appl.Phys. 2011, 53, 10302.
(
10.1051/epjap/2010100383
) / Eur. Phys. J-Appl.Phys. by C K Sumesh (2011) -
Xue, M. Z.; Yao, J.; Cheng, S. C.; Fu, Z. W. Lithium electrochemistry of a novel SnSe thin-film anode. J. Electrochem. Soc. 2006, 153, A270–A274.
(
10.1149/1.2139871
) / J. Electrochem. Soc. by M Z Xue (2006) -
Lefebvre, I.; Szymanski, M. A.; Olivier-Fourcade, J.; Jumas, J. C. Electronic structure of tin monochalcogenides from SnO to SnTe. Phys. Rev. B 1998, 58, 1896–1906.
(
10.1103/PhysRevB.58.1896
) / Phys. Rev. B by I Lefebvre (1998) -
Baumgardner, W. J.; Choi, J. J.; Lim, Y. F.; Hanrath, T. SnSe nanocrystals: Synthesis, structure, optical properties, and surface chemistry. J. Am. Chem. Soc. 2010, 132, 9519–9521.
(
10.1021/ja1013745
) / J. Am. Chem. Soc. by W J Baumgardner (2010) -
Franzman, M. A.; Schlenker, C. W.; Thompson, M. E.; Brutchey, R. L. Solution-phase synthesis of SnSe nanocrystals for use in solar cells. J. Am. Chem. Soc. 2010, 132, 4060–4062.
(
10.1021/ja100249m
) / J. Am. Chem. Soc. by M A Franzman (2010) -
Liu, S.; Guo, X. Y.; Li, M. R.; Zhang, W. H.; Liu, X. Y.; Li, C. Solution-phase synthesis and characterization of single-crystalline SnSe nanowires. Angew. Chem. Int. Edit. 2011, 50, 12050–12053.
(
10.1002/anie.201105614
) / Angew. Chem. Int. Edit. by S Liu (2011) -
Zhao, L. D.; Lo, S. H.; Zhang, Y. S.; Sun, H.; Tan, G. J.; Uher, C.; Wolverton, C.; Dravid, V. P.; Kanatzidis, M. G. Ultralow thermal conductivity and high thermoelectric figure of merit in SnSe crystals. Nature 2014, 508, 373–377.
(
10.1038/nature13184
) / Nature by L D Zhao (2014) -
Car, R.; Ciucci, G.; Quartapelle, L. Electronic Band-Structure of SnSe. Phys. Status. Solidi. B. 1978, 86, 471–478.
(
10.1002/pssb.2220860204
) / Phys. Status. Solidi. B. by R Car (1978) -
Li, L.; Chen, Z.; Hu, Y.; Wang, X. W.; Zhang, T.; Chen, W.; Wang, Q. B. Single-layer single-crystalline snse nanosheets. J. Am. Chem. Soc. 2013, 135, 1213–1216.
(
10.1021/ja3108017
) / J. Am. Chem. Soc. by L Li (2013) -
Vaughn, D. D.; In, S. I.; Schaak, R. E. A Precursor-limited nanoparticle coalescence pathway for tuning the thickness of laterally-uniform colloidal nanosheets: The case of SnSe. ACS nano 2011, 5, 8852–8860.
(
10.1021/nn203009v
) / ACS nano by D D Vaughn (2011) -
Tritsaris, G. A.; Malone, B. D.; Kaxiras, E. Optoelectronic properties of single-layer, double-layer, and bulk tin sulfide: A theoretical study. J. Appl. Phys. 2013, 113, 233507.
(
10.1063/1.4811455
) / J. Appl. Phys. by G A Tritsaris (2013) -
Wang, Q. H.; Kalantar-Zadeh, K.; Kis, A.; Coleman, J. N.; Strano, M. S. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nat. Nanotech 2012, 7, 699–712.
(
10.1038/nnano.2012.193
) / Nat. Nanotech by Q H Wang (2012) -
Antunez, P. D.; Buckley, J. J.; Brutchey, R. L. Tin and germanium monochalcogenide IV–VI semiconductor nanocrystals for use in solar cells. Nanoscale 2011, 3, 2399–2411.
(
10.1039/c1nr10084j
) / Nanoscale by P D Antunez (2011) -
Li, H.; Cao, J.; Zheng, W. S.; Chen, Y. L.; Wu, D.; Dang, W. H.; Wang, K.; Peng, H. L.; Liu, Z. F. Controlled synthesis of topological insulator nanoplate arrays on mica. J. Am. Chem. Soc. 2012, 134, 6132–6135.
(
10.1021/ja3021395
) / J. Am. Chem. Soc. by H Li (2012) -
Dang, W. H.; Peng, H. L.; Li, H.; Wang, P.; Liu, Z. F. Epitaxial heterostructures of ultrathin topological insulator nanoplate and graphene. Nano Lett. 2010, 10, 2870–2876.
(
10.1021/nl100938e
) / Nano Lett. by W H Dang (2010) -
Peng, H. L.; Dang, W. H.; Cao, J.; Chen, Y. L.; Wu, W.; Zheng, W. S.; Li, H.; Shen, Z. X.; Liu, Z. F. Topological insulator nanostructures for near-infrared transparent flexible electrodes. Nat. Chem. 2012, 4, 281–286.
(
10.1038/nchem.1277
) / Nat. Chem. by H L Peng (2012) -
Colin, R.; J. Drowart, J. Thermodynamic study of tin selenide and tin telluride using a mass spectrometer. J. Trans. Faraday Soc. 1964, 60, 673–683.
(
10.1039/tf9646000673
) / J. Trans. Faraday Soc. by R Colin (1964) -
Vaughn, D. D.; Patel, R. J.; Hickner, M. A.; Schaak, R. E. Single-crystal colloidal nanosheets of GeS and GeSe. J. Am. Chem. Soc. 2010, 132, 15170–15172.
(
10.1021/ja107520b
) / J. Am. Chem. Soc. by D D Vaughn (2010) -
Yoon, S. M.; Song, H. J.; Choi, H. C. p-Type Semiconducting GeSe combs by a vaporization-condensation-recrystallization (VCR) process. Adv. Mater. 2010, 22, 2164–2167.
(
10.1002/adma.200903719
) / Adv. Mater. by S M Yoon (2010) -
Xue, D. J.; Tan, J. H.; Hu, J. S.; Hu, W. P.; Guo, Y. G.; Wan, L. J. Anisotropic photoresponse properties of single micrometer-sized GeSe nanosheet. Adv. Mater. 2012, 24, 4528–4533.
(
10.1002/adma.201201855
) / Adv. Mater. by D J Xue (2012) -
Chandrasekhar, H. R.; Humphreys, R. G.; Zwick, U.; Cardona, M. Infrared and Raman spectra ofthe IV–VI compounds SnS and SnSe. Phys. Rev. B 1977, 15, 2177–2183.
(
10.1103/PhysRevB.15.2177
) / Phys. Rev. B by H R Chandrasekhar (1977) -
Ayari, A.; Cobas, E.; Ogundadegbe, O.; Fuhrer, M. S. Realization and electrical characterization of ultrathin crystals of layered transition-metal dichalcogenides. J. Appl. Phys. 2007, 101, 014507.
(
10.1063/1.2407388
) / J. Appl. Phys. by A Ayari (2007) -
Maier, H.; Daniel, D. R. SnSe single-crystals-sublimation growth, deviation from stoichiometry and electrical-properties. J. Electron. Mater. 1977, 6, 693–704.
(
10.1007/BF02660344
) / J. Electron. Mater. by H Maier (1977)
Dates
Type | When |
---|---|
Created | 10 years, 7 months ago (Jan. 20, 2015, 6:23 a.m.) |
Deposited | 8 months, 1 week ago (Dec. 12, 2024, 6:10 p.m.) |
Indexed | 1 week, 3 days ago (Aug. 12, 2025, 5:55 p.m.) |
Issued | 10 years, 7 months ago (Jan. 1, 2015) |
Published | 10 years, 7 months ago (Jan. 1, 2015) |
Published Online | 10 years, 7 months ago (Jan. 21, 2015) |
Published Print | 10 years, 7 months ago (Jan. 1, 2015) |
@article{Zhao_2015, title={Controlled synthesis of single-crystal SnSe nanoplates}, volume={8}, ISSN={1998-0000}, url={http://dx.doi.org/10.1007/s12274-014-0676-8}, DOI={10.1007/s12274-014-0676-8}, number={1}, journal={Nano Research}, publisher={Tsinghua University Press}, author={Zhao, Shuli and Wang, Huan and Zhou, Yu and Liao, Lei and Jiang, Ying and Yang, Xiao and Chen, Guanchu and Lin, Min and Wang, Yong and Peng, Hailin and Liu, Zhongfan}, year={2015}, month=jan, pages={288–295} }