Plasma-assisted fabrication of monolayer phosphorene and its Raman characterization
10.1007/s12274-014-0446-7
Crossref journal-article
Tsinghua University Press
Nano Research (11138)
Bibliography

Lu, W., Nan, H., Hong, J., Chen, Y., Zhu, C., Liang, Z., Ma, X., Ni, Z., Jin, C., & Zhang, Z. (2014). Plasma-assisted fabrication of monolayer phosphorene and its Raman characterization. Nano Research, 7(6), 853–859.

Authors 10
  1. Wanglin Lu (first)
  2. Haiyan Nan (additional)
  3. Jinhua Hong (additional)
  4. Yuming Chen (additional)
  5. Chen Zhu (additional)
  6. Zheng Liang (additional)
  7. Xiangyang Ma (additional)
  8. Zhenhua Ni (additional)
  9. Chuanhong Jin (additional)
  10. Ze Zhang (additional)
References 27 Referenced 636
  1. Novoselov, K. S.; Geim, A. K.; Morozov, S. V.; Jiang, D.; Zhang, Y.; Dubonos, S. V.; Grigorieva, I. V.; Firsov, A. A. Electric field effect in atomically thin carbon films. Science 2004, 306, 666–669. (10.1126/science.1102896) / Science by K S Novoselov (2004)
  2. Geim, A. K.; Novoselov, K. S. The rise of graphene. Nat. Mater. 2007, 6, 183–191. (10.1038/nmat1849) / Nat. Mater. by A K Geim (2007)
  3. Lin, Y.-M.; Dimitrakopoulos, C.; Jenkins, K. A.; Farmer, D. B.; Chiu, H.-Y.; Grill, A.; Avouris, P. 100-GHz transistors from wafer-scale epitaxial graphene. Science 2010, 327, 662–662. (10.1126/science.1184289) / Science by Y-M Lin (2010)
  4. Geim, A. K. Graphene: Status and prospects. Science 2009, 324, 1530–1534. (10.1126/science.1158877) / Science by A K Geim (2009)
  5. Xu, M. S.; Liang, T.; Shi, M. M.; Chen, H. Z. Graphene-like two-dimensional materials. Chem. Rev. 2013, 113, 3766–3798. (10.1021/cr300263a) / Chem. Rev. by M S Xu (2013)
  6. Radisavljevic, B.; Radenovic, A.; Brivio, J.; Giacometti, V.; Kis, A. Single-layer MoS2 transistors. Nat. Nanotechnol. 2011, 6, 147–150. (10.1038/nnano.2010.279) / Nat. Nanotechnol. by B Radisavljevic (2011)
  7. Novoselov, K. S.; Geim, A. K.; Morozov, S. V.; Jiang, D.; Katsnelson, M. I.; Grigorieva, I. V.; Dubonos, S. V.; Firsov, A. A. Two-dimensional gas of massless Dirac fermions in graphene. Nature 2005, 438, 197–200. (10.1038/nature04233) / Nature by K S Novoselov (2005)
  8. Mak, K. F.; Lee, C. G.; Hone, J.; Shan, J.; Heinz, T. F. Atomically thin MoS2: A new direct-gap semiconductor. Phys. Rev. Lett. 2010, 105, 136805. (10.1103/PhysRevLett.105.136805) / Phys. Rev. Lett. by K F Mak (2010)
  9. Radisavljevic, B.; Whitwick, M. B.; Kis, A. Integrated circuits and logic operations based on single-layer MoS2. ACS Nano 2011, 5, 9934–9938. (10.1021/nn203715c) / ACS Nano by B Radisavljevic (2011)
  10. Wang, H.; Yu, L. L.; Lee, Y.-H.; Shi, Y. M.; Hsu, A.; Chin, M. L.; Li, L.-J.; Dubey, M.; Kong, J.; Palacios, T. Integrated circuits based on bilayer MoS2 transistors. Nano Lett. 2012, 12, 4674–4680. (10.1021/nl302015v) / Nano Lett. by H Wang (2012)
  11. Zhu, W. J.; Low, T.; Lee, Y.-H.; Wang, H.; Farmer, D. B.; Kong, J.; Xia, F. N.; Avouris, P. Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition. Nat. Commun. 2014, 5, 3087. (10.1038/ncomms4087) / Nat. Commun. by W J Zhu (2014)
  12. Morita, A. Semiconducting black phosphorus. Appl. Phys. A 1986, 39, 227–242. (10.1007/BF00617267) / Appl. Phys. A by A Morita (1986)
  13. Takahashi, T.; Tokailin, H.; Suzuki, S.; Sagawa, T.; Shirotani, I. Electronic band structure of black phosphorus studied by angle-resolved ultraviolet photoelectron spectroscopy. J. Phys. C: Solid State Phys. 1985, 18, 825. (10.1088/0022-3719/18/4/013) / J. Phys. C: Solid State Phys. by T Takahashi (1985)
  14. Li, L. K.; Yu, Y. J.; Ye, G. J.; Chen, X. H.; Zhang, Y. B. Electronic properties of few-layer black phosphorus. In APS March Meeting Abstracts, Baltimore, Maryland, 2013, pp 6013. / APS March Meeting Abstracts, Baltimore, Maryland by L K Li (2013)
  15. Liu, Y. L.; Nan, H. Y.; Wu, X.; Pan, W.; Wang, W. H.; Bai, J.; Zhao, W. W.; Sun, L. T.; Wang, X. R.; Ni, Z. H. Layer-by-layer thinning of MoS2 by plasma. ACS Nano 2013, 7, 4202–4209. (10.1021/nn400644t) / ACS Nano by Y L Liu (2013)
  16. Castellanos-Gomez, A.; Barkelid, M.; Goossens, A. M.; Calado, V. E.; van der Zant, H. S. J.; Steele, G. A. Laser-thinning of MoS2: On demand generation of a single-layer semiconductor. Nano Lett. 2012, 12, 3187–3192. (10.1021/nl301164v) / Nano Lett. by A Castellanos-Gomez (2012)
  17. Ni, Z. H.; Wang, H. M.; Kasim, J.; Fan, H. M.; Yu, T.; Wu, Y. H.; Feng, Y. P.; Shen, Z. X. Graphene thickness determination using reflection and contrast spectroscopy. Nano Lett. 2007, 7, 2758–2763. (10.1021/nl071254m) / Nano Lett. by Z H Ni (2007)
  18. Mak, K. F.; Sfeir, M. Y.; Wu, Y.; Lui, C. H.; Misewich, J. A.; Heinz, T. F. Measurement of the optical conductivity of graphene. Phys. Rev. Lett. 2008, 101, 196405. (10.1103/PhysRevLett.101.196405) / Phys. Rev. Lett. by K F Mak (2008)
  19. Sugai, S.; Shirotani, I. Raman and infrared reflection spectroscopy in black phosphorus. Solid State Commun. 1985, 53, 753–755. (10.1016/0038-1098(85)90213-3) / Solid State Commun. by S Sugai (1985)
  20. Molina-Sánchez, A.; Wirtz, L. Phonons in single-layer and few-layer MoS2 and WS2. Phys. Rev. B 2011, 84, 155413. (10.1103/PhysRevB.84.155413) / Phys. Rev. B by A Molina-Sánchez (2011)
  21. Lee, C. G.; Yan, H. G.; Brus, L. E.; Heinz, T. F.; Hone, J.; Ryu, S. Anomalous lattice vibrations of single-and few-layer MoS2. ACS Nano 2010, 4, 2695–2700. (10.1021/nn1003937) / ACS Nano by C G Lee (2010)
  22. Appalakondaiah, S.; Vaitheeswaran, G.; Lebègue, S.; Christensen, N. E.; Svane, A. Effect of van der Waals interactions on the structural and elastic properties of black phosphorus. Phys. Rev. B 2012, 86, 035105. (10.1103/PhysRevB.86.035105) / Phys. Rev. B by S Appalakondaiah (2012)
  23. Sugai, S.; Ueda, T.; Murase, K. Pressure dependence of the lattice vibration in the orthorhombic and rhombohedral structures of black phosphorus. J. Phys. Soc. Jpn. 1981, 50, 3356–3361. (10.1143/JPSJ.50.3356) / J. Phys. Soc. Jpn. by S Sugai (1981)
  24. Qiao, J. S.; Kong, X. H.; Hu, Z.-X.; Yang, F.; Ji, W. Few-layer black phosphorus: Emerging 2D semiconductor with high carrier mobility and linear dichroism. arXiv preprint, 2014, arXiv:1401.5045. / arXiv preprint by J S Qiao (2014)
  25. Wang, Y. Y.; Ni, Z. H.; Shen, Z. X.; Wang, H. M.; Wu, Y. H. Interference enhancement of Raman signal of graphene. Appl. Phys. Lett. 2008, 92, 043121. (10.1063/1.2838745) / Appl. Phys. Lett. by Y Y Wang (2008)
  26. Koh, Y. K.; Bae, M.-H.; Cahill, D. G.; Pop, E. Reliably counting atomic planes of few-layer graphene (n > 4). ACS Nano 2010, 5, 269–274. (10.1021/nn102658a) / ACS Nano by Y K Koh (2010)
  27. Takao, Y.; Asahina, H.; Morita, A. Electronic structure of black phosphorus in tight binding approach. J. Phys. Soc. Jpn. 1981, 50, 3362–3369. (10.1143/JPSJ.50.3362) / J. Phys. Soc. Jpn. by Y Takao (1981)
Dates
Type When
Created 11 years, 3 months ago (May 8, 2014, 11:41 a.m.)
Deposited 8 months, 1 week ago (Dec. 12, 2024, 6:08 p.m.)
Indexed 3 weeks, 1 day ago (Aug. 3, 2025, 12:19 a.m.)
Issued 11 years, 3 months ago (May 8, 2014)
Published 11 years, 3 months ago (May 8, 2014)
Published Online 11 years, 3 months ago (May 8, 2014)
Published Print 11 years, 2 months ago (June 1, 2014)
Funders 0

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@article{Lu_2014, title={Plasma-assisted fabrication of monolayer phosphorene and its Raman characterization}, volume={7}, ISSN={1998-0000}, url={http://dx.doi.org/10.1007/s12274-014-0446-7}, DOI={10.1007/s12274-014-0446-7}, number={6}, journal={Nano Research}, publisher={Tsinghua University Press}, author={Lu, Wanglin and Nan, Haiyan and Hong, Jinhua and Chen, Yuming and Zhu, Chen and Liang, Zheng and Ma, Xiangyang and Ni, Zhenhua and Jin, Chuanhong and Zhang, Ze}, year={2014}, month=may, pages={853–859} }