Crossref
journal-article
Tsinghua University Press
Nano Research (11138)
References
29
Referenced
133
-
De Franceschi, S.; van Dam, J. A.; Bakkers, E. P. A. M.; Feiner L. F.; Gurevich, L.; Kouwenhoven, L. P. Single-electron tunneling in InP nanowires. Appl. Phys. Lett.
2003, 83, 344–346.
(
10.1063/1.1590426
) / Appl. Phys. Lett. by S. De Franceschi (2003) -
Bryllert, T.; Wernersson, L. E.; Froberg, L. E.; Samuelson, L. Vertical high-mobility wrap-gated InAs nanowire transistor. IEEE Electron. Dev. Lett.
2006, 27, 323–325.
(
10.1109/LED.2006.873371
) / IEEE Electron. Dev. Lett. by T. Bryllert (2006) -
Huang, Y.; Duan, X. F.; Cui, Y.; Lauhon, L. J.; Kim, K. H.; Lieber, C. M. Logic gates and computation from assembled nanowire building blocks. Science
2001, 294, 1313–1317.
(
10.1126/science.1066192
) / Science by Y. Huang (2001) -
Zheng, G. F.; Patolsky, F.; Cui, Y.; Wang, W. U.; Lieber, C. M. Multiplexed electrical detection of cancer markers with nanowire sensor arrays. Nat. Biotechnol.
2005, 23, 1294–1301.
(
10.1038/nbt1138
) / Nat. Biotechnol. by G. F. Zheng (2005) -
Dick, K. A.; Deppert, K.; Larsson, M. W.; Martensson, T.; Seifert, W.; Wallenberg, L. R.; Samuelson, L. Synthesis of branched “nanotrees” by controlled seeding of multiple branching events. Nat. Mater.
2004, 3, 380–384.
(
10.1038/nmat1133
) / Nat. Mater. by K. A. Dick (2004) -
Bakkers, E. P. A. M.; Borgström, M. T.; Verheijen, M. A. Epitaxial growth of III-V nanowires on group IV substrates. MRS Bull.
2007, 32, 117–122.
(
10.1557/mrs2007.43
) / MRS Bull. by E. P. A. M. Bakkers (2007) -
Regolin, I.; Sudfeld, D.; Luttjohann, S.; Khorenko, V.; Prost, W.; Kastner, J.; Dumpich, G.; Meier, C.; Lorke, A.; Tegude, F. J. Growth and characterisation of GaAs/InGaAs/GaAs nanowhiskers on (111) GaAs. J. Cryst. Growth
2007, 298, 607–611.
(
10.1016/j.jcrysgro.2006.10.122
) / J. Cryst. Growth by I. Regolin (2007) -
Borgström, M.; Deppert, K.; Samuelson, L.; Seifert, W. Size- and shape-controlled GaAs nano-whiskers grown by MOVPE: A growth study. J. Cryst. Growth
2004, 260, 18–22.
(
10.1016/j.jcrysgro.2003.08.009
) / J. Cryst. Growth by M. Borgström (2004) -
Verheijen, M. A.; Immink, G.; deSmet, T.; Borgstrom, M. T.; Bakkers, E. P. A. M. Growth kinetics of heterostructured GaP-GaAs nanowires. J. Am. Chem. Soc.
2006, 128, 1353–1359.
(
10.1021/ja057157h
) / J. Am. Chem. Soc. by M. A. Verheijen (2006) -
Joyce, H. J.; Gao, Q.; Tan, H. H.; Jagadish, C.; Kim, Y.; Zhang, X.; Guo, Y. N.; Zou, J. Twin-free uniform epitaxial GaAs nanowires grown by a two-temperature process. Nano. Lett.
2007, 7, 921–926.
(
10.1021/nl062755v
) / Nano. Lett. by H. J. Joyce (2007) -
Lauhon, L. J.; Gudiksen, M. S.; Wang, C. L.; Lieber, C. M. Epitaxial core-shell and core-multishell nanowire heterostructures. Nature
2002, 420, 57–61.
(
10.1038/nature01141
) / Nature by L. J. Lauhon (2002) -
Joyce, H. J.; Gao, Q.; Tan, H. H.; Jagadish, C.; Kim, Y.; Fickenscher, M. A.; Perera, S.; Hoang, T. B.; Smith, L. M.; Jackson, H. E.; Yarrison-Rice, J. M.; Zhang, X.; Zou, J. Unexpected benefits of rapid growth rate for III–V nanowires. Nano Lett.
2009, 9, 695–701.
(
10.1021/nl803182c
) / Nano Lett. by H. J. Joyce (2009) -
Suhara, M.; Nagao, C.; Honji, H.; Miyamoto, Y.; Furuya, K.; Takemura, R. Atomically flat OMVPE growth of GaInAs and InP observed by AFM for level narrowing in resonant tunneling diodes. J. Cryst. Growth
1997, 179, 18–25.
(
10.1016/S0022-0248(97)00103-6
) / J. Cryst. Growth by M. Suhara (1997) - Stringfellow, G. B. Organometallic Vapor Phase Epitaxy: Theory and Practice; 2nd edn; Academic Press: San Diego, 1999. / Organometallic Vapor Phase Epitaxy: Theory and Practice by G. B. Stringfellow (1999)
-
Chen, C. H.; Kitamura, M.; Cohen, R. M.; Stringfellow, G. B. Growth of ultrapure InP by atmospheric-pressure organometallic vapor-phase epitaxy. Appl. Phys. Lett.
1986, 49, 963–965.
(
10.1063/1.97496
) / Appl. Phys. Lett. by C. H. Chen (1986) -
Hsu, C. C.; Yuan, J. S.; Cohen, R. M.; Stringfellow, G. B. Doping studies for InP grown by organometallic vapor-phase epitaxy. J. Cryst. Growth
1986, 74, 535–542.
(
10.1016/0022-0248(86)90199-5
) / J. Cryst. Growth by C. C. Hsu (1986) -
Dick, K. A.; Deppert, K.; Samuelson, L.; Seifert, W. InAs nanowires grown by MOVPE. J. Cryst. Growth
2007, 298, 631–634.
(
10.1016/j.jcrysgro.2006.10.083
) / J. Cryst. Growth by K. A. Dick (2007) -
Dayeh, S. A.; Yu, E. T.; Wang, D. III–V nanowire growth mechanism: III–V ratio and temperature effects. Nano Lett.
2007, 7, 2486–2490.
(
10.1021/nl0712668
) / Nano Lett. by S. A. Dayeh (2007) -
Caneau, C.; Bhat, R.; Koza, M.; Hayes, J. R.; Esagui, R. Etching of InP by HCl in an OMVPE Reactor. J. Cryst. Growth
1991, 107, 203–208.
(
10.1016/0022-0248(91)90457-G
) / J. Cryst. Growth by C. Caneau (1991) -
Kitatani, T.; Tsuchiya, T.; Shinoda, K.; Aoki, M. In situ etching of InGaAsP/InP by using HCl in an MOVPE reactor. J. Cryst. Growth
2005, 274, 372–378.
(
10.1016/j.jcrysgro.2004.10.163
) / J. Cryst. Growth by T. Kitatani (2005) -
Magnusson, M. H.; Deppert, K.; Malm, J. O.; Bovin, J. O.; Samuelson, L. Size-selected gold nanoparticles by aerosol technology. Nanostruct. Mater.
1999, 12, 45–48.
(
10.1016/S0965-9773(99)00063-X
) / Nanostruct. Mater. by M. H. Magnusson (1999) -
Tsujino, K.; Matsumura, M. Morphology of nanoholes formed in silicon by wet etching in solutions containing HF and H2O2 at different concentrations using silver nanoparticles as catalysts. Electrochim. Acta
2007, 53, 28–34.
(
10.1016/j.electacta.2007.01.035
) / Electrochim. Acta by K. Tsujino (2007) -
Algra, R.; Verheijen, M. A.; Borgström, M. T.; Feiner, L. F.; Immink, G.; van Enckevort, W. J. P.; Vlieg, E.; Bakkers, E. P. A. M. Twinning superlattices in indium phosphide nanowires. Nature
2008, 456, 369–372.
(
10.1038/nature07570
) / Nature by R. Algra (2008) -
Skromme, B. J.; Stillman, G. E.; Oberstar, J. D.; Chan, S. S. Photoluminescence identification of the C and Be acceptor levels in InP. J. Electron. Mater.
1984, 13, 463–491.
(
10.1007/BF02656648
) / J. Electron. Mater. by B. J. Skromme (1984) -
Fry, K. L.; Kuo, C. P.; Larsen, C. A.; Cohen, R. M.; Stringfellow, G. B.; Melas, A. OMVPE Growth of InP and Ga0.47In0.53As using ethyldimethylindium. J. Electron. Mater.
1986, 15, 91–96.
(
10.1007/BF02649909
) / J. Electron. Mater. by K. L. Fry (1986) -
Pemasiri, K.; Montazeri, M.; Gass, R.; Smith, L. M.; Jackson, H. E.; Yarrison-Rice, J.; Paiman, S.; Gao, Q.; Tan, H. H.; Jagadish, C.; Zhang, X.; Zou, J. Carrier dynamics and quantum confinement in type II ZB-WZ InP nanowire homostructures. Nano Lett.
2009, 9, 648–654.
(
10.1021/nl802997p
) / Nano Lett. by K. Pemasiri (2009) -
Bao, J. M.; Bell, D. C.; Capasso, F.; Wagner, J. B.; Martensson, T.; Tragardh, J.; Samuelson, L. Optical properties of rotationally twinned InP nanowire heterostructures. Nano Lett.
2008, 8, 836–841.
(
10.1021/nl072921e
) / Nano Lett. by J. M. Bao (2008) - Okamoto, H.; Massalski, T. B. The Au-C (gold-carbon) system. J. Phase Equil. 1984, 5, 378–379. / J. Phase Equil. by H. Okamoto (1984)
-
Borgstrom, M. T.; Immink, G.; Ketelaars, B.; Algra, R.; Bakkers, E. P. A. M. Synergetic nanowire growth. Nat. Nanotechnol.
2007, 2, 541–544.
(
10.1038/nnano.2007.263
) / Nat. Nanotechnol. by M. T. Borgstrom (2007)
Dates
Type | When |
---|---|
Created | 15 years, 5 months ago (March 20, 2010, 7:01 a.m.) |
Deposited | 8 months, 1 week ago (Dec. 12, 2024, 6:04 p.m.) |
Indexed | 4 months, 2 weeks ago (April 7, 2025, 9:09 p.m.) |
Issued | 15 years, 5 months ago (March 20, 2010) |
Published | 15 years, 5 months ago (March 20, 2010) |
Published Online | 15 years, 5 months ago (March 20, 2010) |
Published Print | 15 years, 4 months ago (April 1, 2010) |
@article{Borgstr_m_2010, title={In situ etching for total control over axial and radial nanowire growth}, volume={3}, ISSN={1998-0000}, url={http://dx.doi.org/10.1007/s12274-010-1029-x}, DOI={10.1007/s12274-010-1029-x}, number={4}, journal={Nano Research}, publisher={Tsinghua University Press}, author={Borgström, Magnus T. and Wallentin, Jesper and Trägårdh, Johanna and Ramvall, Peter and Ek, Martin and Wallenberg, L. Reine and Samuelson, Lars and Deppert, Knut}, year={2010}, month=mar, pages={264–270} }