Abstract
Abstract The field emission properties of SnO2nanowires fabricated by chemical vapor deposition with metallic catalyst-assistance were investigated. For the as-fabricated SnO2nanowires, the turn-on and threshold field were 4.03 and 5.4 V/μm, respectively. Considerable enhancement of field emission of SnO2nanowires was obtained by a post-annealing process in oxygen at high temperature. When the SnO2nanowires were post-annealed at 1,000 °C in oxygen, the turn-on and threshold field were decreased to 3.77 and 4.4 V/μm, respectively, and the current density was increased to 6.58 from 0.3 mA/cm2at the same applied electric field of 5.0 V/μm.
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Dates
Type | When |
---|---|
Created | 16 years, 2 months ago (June 23, 2009, 9:40 a.m.) |
Deposited | 2 years, 5 months ago (March 20, 2023, 12:22 a.m.) |
Indexed | 1 year, 6 months ago (Jan. 29, 2024, 1:45 p.m.) |
Issued | 16 years, 2 months ago (June 24, 2009) |
Published | 16 years, 2 months ago (June 24, 2009) |
Published Online | 16 years, 2 months ago (June 24, 2009) |
Published Print | 15 years, 10 months ago (Oct. 1, 2009) |
@article{Wang_2009, title={Considerable Enhancement of Field Emission of SnO2Nanowires by Post-Annealing Process in Oxygen at High Temperature}, volume={4}, ISSN={1556-276X}, url={http://dx.doi.org/10.1007/s11671-009-9367-x}, DOI={10.1007/s11671-009-9367-x}, number={10}, journal={Nanoscale Research Letters}, publisher={Springer Science and Business Media LLC}, author={Wang, J. B. and Li, K. and Zhong, X. L. and Zhou, Y. C. and Fang, X. S. and Tang, C. C. and Bando, Y.}, year={2009}, month=jun }