Crossref journal-article
Springer Science and Business Media LLC
Nanoscale Research Letters (297)
Abstract

Abstract In this study, β-In2S3nanowires were first synthesized by sulfurizing the pure Indium (In) nanowires in an AAO membrane. As FE-SEM results, β-In2S3nanowires are highly ordered, arranged tightly corresponding to the high porosity of the AAO membrane used. The diameter of the β-In2S3nanowires is about 60 nm with the length of about 6–8 μm. Moreover, the aspect ratio of β-In2S3nanowires is up to 117. An EDS analysis revealed the β-In2S3nanowires with an atomic ratio of nearly S/In = 1.5. X-ray diffraction and corresponding selected area electron diffraction patterns demonstrated that the β-In2S3nanowire is tetragonal polycrystalline. The direct band gap energy (Eg) is 2.40 eV from the optical measurement, and it is reasonable with literature.

Bibliography

Shi, J.-B., Chen, C.-J., Lin, Y.-T., Hsu, W.-C., Chen, Y.-C., & Wu, P.-F. (2009). Anodic Aluminum Oxide Membrane-Assisted Fabrication of β-In2S3Nanowires. Nanoscale Research Letters, 4(9).

Authors 6
  1. Jen-Bin Shi (first)
  2. Chih-Jung Chen (additional)
  3. Ya-Ting Lin (additional)
  4. Wen-Chia Hsu (additional)
  5. Yu-Cheng Chen (additional)
  6. Po-Feng Wu (additional)
References 21 Referenced 11
  1. Yi G, Schwarzacher W: Appl. Phys. Lett.. 1999, 74: 1746. ; COI number [1:CAS:528:DyaK1MXhvV2ntbY%3D]; Bibcode number [1999ApPhL..74.1746Y] 10.1063/1.123675 (10.1063/1.123675) / Appl. Phys. Lett by G Yi (1999)
  2. Ross CA, Hwang M, Shima M, Smith HI, Farhoud M, Savas TA, et al.: J. Magn. Magn. Mater.. 2002, 249: 200. ; COI number [1:CAS:528:DC%2BD38XotFOitb8%3D]; Bibcode number [2002JMMM..249..200R] 10.1016/S0304-8853(02)00531-0 (10.1016/S0304-8853(02)00531-0) / J. Magn. Magn. Mater by CA Ross (2002)
  3. Zach MP, Ng KH, Penner RM: Science. 2000, 290: 2120. ; COI number [1:CAS:528:DC%2BD3cXptVyis78%3D]; Bibcode number [2000Sci...290.2120Z] 10.1126/science.290.5499.2120 (10.1126/science.290.5499.2120) / Science by MP Zach (2000)
  4. Shi JB, Chen YJ, Lin YT, Wu C, Chen CJ, Lin JY: Jpn. J. Appl. Phys.. 2006, 45: 9075. ; COI number [1:CAS:528:DC%2BD2sXhs1eltw%3D%3D]; Bibcode number [2006JaJAP..45.9075S] 10.1143/JJAP.45.9075 (10.1143/JJAP.45.9075) / Jpn. J. Appl. Phys by JB Shi (2006)
  5. Shi JB, Chen YC, Lee CW, Lin YT, Wu C, Chen CJ: Mater. Lett.. 2008, 62: 15. COI number [1:CAS:528:DC%2BD2sXhtlejsrzP] 10.1016/j.matlet.2007.04.060 (10.1016/j.matlet.2007.04.060) / Mater. Lett by JB Shi (2008)
  6. Diehl R, Nitsche R: J. Cryst. Growth. 1975, 28: 306. ; COI number [1:CAS:528:DyaE2MXktlGrtbw%3D]; Bibcode number [1975JCrGr..28..306D] 10.1016/0022-0248(75)90067-6 (10.1016/0022-0248(75)90067-6) / J. Cryst. Growth by R Diehl (1975)
  7. Diehl R, Carpentier CD, Nitsche R: Acta Crystallogr. B. 1976, 32: 1257. 10.1107/S0567740876005062 (10.1107/S0567740876005062) / Acta Crystallogr. B by R Diehl (1976)
  8. Bube RH, McCaroll WH: J. Phys. Chem. Solids. 1959, 10: 333. ; COI number [1:CAS:528:DyaF3cXjt1Ohuw%3D%3D]; Bibcode number [1959JPCS...10..333B] 10.1016/0022-3697(59)90010-1 (10.1016/0022-3697(59)90010-1) / J. Phys. Chem. Solids by RH Bube (1959)
  9. Barreau N, Marsillac S, Albertini D, Bernede JC: Thin Solid Films. 2002, 403–404: 331. 10.1016/S0040-6090(01)01512-7 (10.1016/S0040-6090(01)01512-7) / Thin Solid Films by N Barreau (2002)
  10. Gorai S, Chaudhuri S: Mater. Chem. Phys.. 2005, 89: 332. COI number [1:CAS:528:DC%2BD2cXhtVamtLbL] 10.1016/j.matchemphys.2004.09.009 (10.1016/j.matchemphys.2004.09.009) / Mater. Chem. Phys by S Gorai (2005)
  11. John TT, Kartha CS, Vijayakumar KP, Abe T, Kashiwaba Y: Vacuum. 2006, 80: 870. COI number [1:CAS:528:DC%2BD28XltVektbc%3D] 10.1016/j.vacuum.2005.11.046 (10.1016/j.vacuum.2005.11.046) / Vacuum by TT John (2006)
  12. Zhu X, Ma J, Wang Y, Tao J, Zhou J, Zhao Z, Xie L, Tian H: Mater. Res. Bull.. 2006, 41: 1584. COI number [1:CAS:528:DC%2BD28XmvVakur8%3D] 10.1016/j.materresbull.2005.12.016 (10.1016/j.materresbull.2005.12.016) / Mater. Res. Bull by X Zhu (2006)
  13. Zheng MJ, Zhang LD, Li GH, Zhang XY, Wang XF: Appl. Phys. Lett.. 2001, 79: 839. ; COI number [1:CAS:528:DC%2BD3MXls1Ortbg%3D]; Bibcode number [2001ApPhL..79..839Z] 10.1063/1.1389071 (10.1063/1.1389071) / Appl. Phys. Lett by MJ Zheng (2001)
  14. Shen S, Guo L: J. Solid State Chem.. 2006, 179: 2629. ; COI number [1:CAS:528:DC%2BD28Xns1Srtbo%3D]; Bibcode number [2006JSSCh.179.2629S] 10.1016/j.jssc.2006.05.010 (10.1016/j.jssc.2006.05.010) / J. Solid State Chem by S Shen (2006)
  15. Yasaki Y, Sonoyama N, Sakata T: J. Electroanal. Chem.. 1999, 469: 116. COI number [1:CAS:528:DyaK1MXksV2rt7g%3D] 10.1016/S0022-0728(99)00184-9 (10.1016/S0022-0728(99)00184-9) / J. Electroanal. Chem by Y Yasaki (1999)
  16. Chen LY, Zhang ZD, Wang WZ: J. Phys. Chem. C. 2008, 112: 4117. COI number [1:CAS:528:DC%2BD1cXisVCnu7Y%3D] 10.1021/jp710074h (10.1021/jp710074h) / J. Phys. Chem. C by LY Chen (2008)
  17. Zhao P, Huang T, Huang K: J. Phys. Chem. C. 2007, 111: 12890. COI number [1:CAS:528:DC%2BD2sXptVWlu7s%3D] 10.1021/jp073390l (10.1021/jp073390l) / J. Phys. Chem. C by P Zhao (2007)
  18. Burns G: Solid State Physics. Academic Press, Orlando; 1985. / Solid State Physics by G Burns (1985)
  19. Gorai S, Guha P, Ganguli D, Chaudhuri S: Mater. Chem. Phys.. 2003, 82: 974. COI number [1:CAS:528:DC%2BD3sXpt1GgtrY%3D] 10.1016/j.matchemphys.2003.08.013 (10.1016/j.matchemphys.2003.08.013) / Mater. Chem. Phys by S Gorai (2003)
  20. Timoumi A, Bouzouita H, Brini R, Kanzari M, Rezig B: Appl. Surf. Sci.. 2006, 253: 306. ; COI number [1:CAS:528:DC%2BD28XhtFKksL%2FJ]; Bibcode number [2006ApSS..253..306T] 10.1016/j.apsusc.2006.06.003 (10.1016/j.apsusc.2006.06.003) / Appl. Surf. Sci by A Timoumi (2006)
  21. Yoosuf R, Jayaraj MK: Sol. Energy Mater. Sol. Cells. 2005, 89: 85. COI number [1:CAS:528:DC%2BD2MXmsVWnu74%3D] 10.1016/j.solmat.2005.01.004 (10.1016/j.solmat.2005.01.004) / Sol. Energy Mater. Sol. Cells by R Yoosuf (2005)
Dates
Type When
Created 16 years, 2 months ago (June 5, 2009, 2:38 p.m.)
Deposited 2 years, 5 months ago (March 20, 2023, 12:22 a.m.)
Indexed 2 years, 4 months ago (April 17, 2023, 6:21 p.m.)
Issued 16 years, 2 months ago (June 6, 2009)
Published 16 years, 2 months ago (June 6, 2009)
Published Online 16 years, 2 months ago (June 6, 2009)
Published Print 15 years, 11 months ago (Sept. 1, 2009)
Funders 0

None

@article{Shi_2009, title={Anodic Aluminum Oxide Membrane-Assisted Fabrication of β-In2S3Nanowires}, volume={4}, ISSN={1556-276X}, url={http://dx.doi.org/10.1007/s11671-009-9357-z}, DOI={10.1007/s11671-009-9357-z}, number={9}, journal={Nanoscale Research Letters}, publisher={Springer Science and Business Media LLC}, author={Shi, Jen-Bin and Chen, Chih-Jung and Lin, Ya-Ting and Hsu, Wen-Chia and Chen, Yu-Cheng and Wu, Po-Feng}, year={2009}, month=jun }