Abstract
Abstract In this study, β-In2S3nanowires were first synthesized by sulfurizing the pure Indium (In) nanowires in an AAO membrane. As FE-SEM results, β-In2S3nanowires are highly ordered, arranged tightly corresponding to the high porosity of the AAO membrane used. The diameter of the β-In2S3nanowires is about 60 nm with the length of about 6–8 μm. Moreover, the aspect ratio of β-In2S3nanowires is up to 117. An EDS analysis revealed the β-In2S3nanowires with an atomic ratio of nearly S/In = 1.5. X-ray diffraction and corresponding selected area electron diffraction patterns demonstrated that the β-In2S3nanowire is tetragonal polycrystalline. The direct band gap energy (Eg) is 2.40 eV from the optical measurement, and it is reasonable with literature.
References
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Dates
Type | When |
---|---|
Created | 16 years, 2 months ago (June 5, 2009, 2:38 p.m.) |
Deposited | 2 years, 5 months ago (March 20, 2023, 12:22 a.m.) |
Indexed | 2 years, 4 months ago (April 17, 2023, 6:21 p.m.) |
Issued | 16 years, 2 months ago (June 6, 2009) |
Published | 16 years, 2 months ago (June 6, 2009) |
Published Online | 16 years, 2 months ago (June 6, 2009) |
Published Print | 15 years, 11 months ago (Sept. 1, 2009) |
@article{Shi_2009, title={Anodic Aluminum Oxide Membrane-Assisted Fabrication of β-In2S3Nanowires}, volume={4}, ISSN={1556-276X}, url={http://dx.doi.org/10.1007/s11671-009-9357-z}, DOI={10.1007/s11671-009-9357-z}, number={9}, journal={Nanoscale Research Letters}, publisher={Springer Science and Business Media LLC}, author={Shi, Jen-Bin and Chen, Chih-Jung and Lin, Ya-Ting and Hsu, Wen-Chia and Chen, Yu-Cheng and Wu, Po-Feng}, year={2009}, month=jun }