DOI: 10.1007/s11664-998-0104-5. Very low resistance ohmic contacts to n-GaN

Very low resistance ohmic contacts to n-GaN

10.1007/s11664-998-0104-5

Crossref journal-article

Springer Science and Business Media LLC

Journal of Electronic Materials (297)

Bibliography

Lee, H. J., Yu, S. J., Asahi, H., Gonda, S.-I., Kim, Y. H., Rhee, J. K., & Noh, S. J. (1998). Very low resistance ohmic contacts to n-GaN. Journal of Electronic Materials, 27(7), 829â832.

Authors 7

Hwe Jae Lee (first)
Soon Jae Yu (additional)
Hajime Asahi (additional)
Shun-Ichi Gonda (additional)
Young Hwan Kim (additional)
Jin Koo Rhee (additional)
S. J. Noh (additional)

References 13 Referenced 13

M. Asif Khan, J.N. Kuznia, A.R. Bhattarai and D.T. Olson, Appl. Phys. Lett. 62, 1786 (1993). (10.1063/1.109549) / Appl. Phys. Lett. by M. Asif Khan (1993)
S. Nakamura, T. Mukai and M. Senoh, Appl. Phys. Lett. 64, 28 (1994). (10.1063/1.110910) / Appl. Phys. Lett. by S. Nakamura (1994)
T.C. Shen, G.B. Gao and H. Morkoç, J. Vac. Sci. Technol. B 10, 2113 (1992). (10.1116/1.586179) / J. Vac. Sci. Technol. B by T.C. Shen (1992)
S. Kurtin, T.C. McGill and C.A. Mead, Phys. Rev. Lett. 22,1433 (1969). (10.1103/PhysRevLett.22.1433) / Phys. Rev. Lett. by S. Kurtin (1969)
J. Bardeen, Phys. Rev. 71, 717 (1947). (10.1103/PhysRev.71.717) / Phys. Rev. by J. Bardeen (1947)
J.S. Foresi and T.D. Moustakas, Appl. Phys. Lett. 62, 2859 (1993). (10.1063/1.109207) / Appl. Phys. Lett. by J.S. Foresi (1993)
J.D. Guo, C.I. Lin, M.S. Feng, F.M. Pan, G.C. Chi and C.T. Lee, Appl. Phys. Lett. 68, 235 (1996). (10.1063/1.116471) / Appl. Phys. Lett. by J.D. Guo (1996)
B.P. Luther, S.E. Mohney, T.N. Jackson, M. Asif Khan, Q. Chen and J.W. Yang, Appl. Phys. Lett. 70, 57 (1997). (10.1063/1.119305) / Appl. Phys. Lett. by B.P. Luther (1997)
M.E. Lin, Z. Ma, F.Y. Huang, Z.F. Fan, L.H. Allen and H. Morkoç, Appl. Phys. Lett. 64, 1003 (1994). (10.1063/1.111961) / Appl. Phys. Lett. by M.E. Lin (1994)
Zhifang Fan, S. Noor Mohammad, Wook Kim, Ozgur Aktas, Andrei E. Botchkarev and Hadis Morkoç, Appl. Phys. Lett. 68, 1672 (1996). (10.1063/1.115901) / Appl. Phys. Lett. by Zhifang Fan (1996)
S.J. Yu, H. Asahi, K. Iwata, K. Asami and S. Gonda, Proc. Third Korean Conf. on Semiconductor, Naejangsan, Korea, B-11 (1996).
K. Iwata, H. Asahi, S.J. Yu, K. Asami, H. Fujita, M. Fushida and S. Gonda, Jpn. J. Appl. Phys. 35, L289 (1996). (10.1143/JJAP.35.L289)
V.L. Rideout, Solid-State Electron. 18, 541 (1975). (10.1016/0038-1101(75)90031-3) / Solid-State Electron. by V.L. Rideout (1975)

Dates

Type	When
Created	18 years, 4 months ago (April 6, 2007, 7:40 a.m.)
Deposited	6 years, 2 months ago (June 1, 2019, 4:04 p.m.)
Indexed	1 year, 6 months ago (Feb. 10, 2024, 6:39 p.m.)
Issued	27 years, 2 months ago (July 1, 1998)
Published	27 years, 2 months ago (July 1, 1998)
Published Print	27 years, 2 months ago (July 1, 1998)

Funders 0

None

BibTeX

@article{Lee_1998, title={Very low resistance ohmic contacts to n-GaN}, volume={27}, ISSN={1543-186X}, url={http://dx.doi.org/10.1007/s11664-998-0104-5}, DOI={10.1007/s11664-998-0104-5}, number={7}, journal={Journal of Electronic Materials}, publisher={Springer Science and Business Media LLC}, author={Lee, Hwe Jae and Yu, Soon Jae and Asahi, Hajime and Gonda, Shun-Ichi and Kim, Young Hwan and Rhee, Jin Koo and Noh, S. J.}, year={1998}, month=jul, pages={829–832} }

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