DOI: 10.1007/s11664-998-0021-7. MBE growth and characterization of in situ arsenic doped HgCdTe

MBE growth and characterization of in situ arsenic doped HgCdTe

10.1007/s11664-998-0021-7

Crossref journal-article

Springer Science and Business Media LLC

Journal of Electronic Materials (297)

Bibliography

Chen, A. C., Zandian, M., Edwall, D. D., De Wames, R. E., Wijewarnasuriya, P. S., Arias, J. M., Sivananthan, S., Berding, M., & Sher, A. (1998). MBE growth and characterization of in situ arsenic doped HgCdTe. Journal of Electronic Materials, 27(6), 595â599.

Authors 9

A. C. Chen (first)
M. Zandian (additional)
D. D. Edwall (additional)
R. E. De Wames (additional)
P. S. Wijewarnasuriya (additional)
J. M. Arias (additional)
S. Sivananthan (additional)
M. Berding (additional)
A. Sher (additional)

References 16 Referenced 35

D.D. Edwall, M. Zandian, A.C. Chen and J.M. Arias, J. Electron. Mater. 26, 493 (1997). (10.1007/s11664-997-0183-8) / J. Electron. Mater. by D.D. Edwall (1997)
R.D. Rajavel, D.M. Jamba, O.K. Wu, J.A. Wilson, E. Patten, K. Kosai, J. Rosbeck, P. Goetz, J. Johnson and S.M. Johnson, J. Electron. Mater. 26, 476 (1997). (10.1007/s11664-997-0180-y) / J. Electron. Mater. by R.D. Rajavel (1997)
J. Bonnet-Gamard, J. Bleuse, N. Magnea and J.L. Pautrat, J. Cryst. Growth 159, 613 (1996). (10.1016/0022-0248(95)00779-2) / J. Cryst. Growth by J. Bonnet-Gamard (1996)
M. Zandian, A.C. Chen, D.D. Edwall, J. Pasko and J.M. Arias, to be published in Appl. Phys. Lett.
S. Sivananthan, P.S. Wijewarnasuriya, F. Aqariden, H.R. Vydyanath, M. Zandian, D.D. Edwall and J.M. Arias, J. Electron. Mater. 26, 621 (1997). (10.1007/s11664-997-0205-6) / J. Electron. Mater. by S. Sivananthan (1997)
P.S. Wijewarnasuriya, I.K. Sou, J. Kim, K.K. Mahavadi, S. Sivananthan, M. Boukerche and J.P. Faurie, Appl. Phys. Lett. 51, 2045 (1987). (10.1063/1.98281) / Appl. Phys. Lett. by P.S. Wijewarnasuriya (1987)
J.M. Arias, S.H. Shin, D.E. Cooper, M. Zandian, J.G. Pasko, E.R. Gertner, R.E. DeWames and J. Singh, J. Vac. Sci. Technol. A 8, 1025 (1990). (10.1116/1.577000) / J. Vac. Sci. Technol. A by J.M. Arias (1990)
O.K. Wu, D.N. Jamba and G.S. Kamath, J. Cryst. Growth 127, 365 (1993). (10.1016/0022-0248(93)90640-I) / J. Cryst. Growth by O.K. Wu (1993)
R.D. Rajavel, D. Jamba, O.K. Wu, J.A. Roth, P.D. Brewer, J.E. Jensen, C.A. Cockrum, G.M. Venzor and S.M. Johnson. J. Electron. Mater. 25, 1411 (1996). (10.1007/BF02655043) / J. Electron. Mater. by R.D. Rajavel (1996)
J.S. Chen, U. S. Patent, No. 4897152, (Jan. 30, 1990).
H.R. Vydyanath, J.A. Ellsworth and C.M. Devaney, J. Electron. Mater. 16, 13 (1987). (10.1007/BF02667786) / J. Electron. Mater. by H.R. Vydyanath (1987)
E.R. Gertner (unpublished data).
O.K. Wu, G.S. Kamath, W.A. Radford, P.R. Bratt and E.A. Patten, J. Vac. Sci. Technol. A 8, 1034 (1990). (10.1116/1.577001) / J. Vac. Sci. Technol. A by O.K. Wu (1990)
S.K. Ghandi, N.R. Taskar, K.K. Parat, D. Terry and I. Bhat, Appl. Phys. Lett. 53, 1641 (1988). (10.1063/1.99936) / Appl. Phys. Lett. by S.K. Ghandi (1988)
T. Tung, J. Cryst. Growth 86, 161 (1988). (10.1016/0022-0248(90)90713-U) / J. Cryst. Growth by T. Tung (1988)
L.O. Bubulac, D.D. Edwall and C.R. Viswanathan, J. Vac. Sci Technol. B 9, 1695 (1991). (10.1116/1.585402) / J. Vac. Sci Technol. B by L.O. Bubulac (1991)

Dates

Type	When
Created	18 years, 4 months ago (April 6, 2007, 12:17 a.m.)
Deposited	6 years, 3 months ago (June 1, 2019, 4:04 p.m.)
Indexed	1 year, 6 months ago (Feb. 11, 2024, 4:55 a.m.)
Issued	27 years, 3 months ago (June 1, 1998)
Published	27 years, 3 months ago (June 1, 1998)
Published Print	27 years, 3 months ago (June 1, 1998)

Funders 0

None

BibTeX

@article{Chen_1998, title={MBE growth and characterization of in situ arsenic doped HgCdTe}, volume={27}, ISSN={1543-186X}, url={http://dx.doi.org/10.1007/s11664-998-0021-7}, DOI={10.1007/s11664-998-0021-7}, number={6}, journal={Journal of Electronic Materials}, publisher={Springer Science and Business Media LLC}, author={Chen, A. C. and Zandian, M. and Edwall, D. D. and De Wames, R. E. and Wijewarnasuriya, P. S. and Arias, J. M. and Sivananthan, S. and Berding, M. and Sher, A.}, year={1998}, month=jun, pages={595–599} }

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