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Journal of Electronic Materials (297)
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Edwall, D. D., Zandian, M., Chen, A. C., & Arias, J. M. (1997). Improving material characteristics and reproducibility of MBE HgCdTe. Journal of Electronic Materials, 26(6), 493–501.

Authors 4
  1. D. D. Edwall (first)
  2. M. Zandian (additional)
  3. A. C. Chen (additional)
  4. J. M. Arias (additional)
References 8 Referenced 36
  1. J. Bajaj, J.M. Arias, M. Zandian, D.D. Edwall, J.G. Pasko, L.O. Bubulac and L.J. Kozlowski, J. Electron. Mater. 25,1394 (1996). (10.1007/BF02655040) / J. Electron. Mater. by J. Bajaj (1996)
  2. P. Mackett, Properties of Narrow Gap Cadmium-based Compounds, EMIS Datareview Series No. 10, ed. Peter Capper, (Inspec, 1994), p. 188.
  3. E. Finkman and S.E. Schacham, J. Appl. Phys. 56, 2896 (1984). (10.1063/1.333828) / J. Appl. Phys. by E. Finkman (1984)
  4. J.M. Arias, J.G. Pasko, M. Zandian, J. Bajaj, L.J. Kozlowski, R.E. DeWames and W.E. Tennant, Proc. SPIE Symposia on Producibility of II–VI Materials and Devices, Vol. 2228, (SPIE, 1994), p. 210.
  5. M. Zandian, J.M. Arias, J. Bajaj, J.G. Pasko, L.O. Bubulac and R.E. DeWames, J. Electron. Mater. 24, 1207 (1995). (10.1007/BF02653075) / J. Electron. Mater. by M. Zandian (1995)
  6. J.M. Arias, Properties of Narrow Gap Cadmium-based Compounds, EMIS Datareview Series No. 10, ed. Peter Capper, (Inspec, 1994), p. 30.
  7. V.C. Lopes, A.J. Syllaios and M.C. Chen, Semicond. Sei. Technol. 8, 824 (1993). (10.1088/0268-1242/8/6S/005) / Semicond. Sei. Technol. by V.C. Lopes (1993)
  8. M.J. Bevan, J. Electron. Mater. 26, 502 (1997). (10.1007/s11664-997-0184-7) / J. Electron. Mater. by M.J. Bevan (1997)
Dates
Type When
Created 18 years, 1 month ago (July 20, 2007, 7:53 a.m.)
Deposited 6 years, 3 months ago (June 1, 2019, 4:01 p.m.)
Indexed 2 years, 1 month ago (July 16, 2023, 6:27 a.m.)
Issued 28 years, 3 months ago (June 1, 1997)
Published 28 years, 3 months ago (June 1, 1997)
Published Print 28 years, 3 months ago (June 1, 1997)
Funders 0

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@article{Edwall_1997, title={Improving material characteristics and reproducibility of MBE HgCdTe}, volume={26}, ISSN={1543-186X}, url={http://dx.doi.org/10.1007/s11664-997-0183-8}, DOI={10.1007/s11664-997-0183-8}, number={6}, journal={Journal of Electronic Materials}, publisher={Springer Science and Business Media LLC}, author={Edwall, D. D. and Zandian, M. and Chen, A. C. and Arias, J. M.}, year={1997}, month=jun, pages={493–501} }