DOI: 10.1007/s11664-997-0002-2. Characterization of MOVPE-grown (Al, In, Ga) N heterostructures by quantitative analytical electron microscopy

Characterization of MOVPE-grown (Al, In, Ga) N heterostructures by quantitative analytical electron microscopy

10.1007/s11664-997-0002-2

Crossref journal-article

Springer Science and Business Media LLC

Journal of Electronic Materials (297)

Bibliography

Lakner, H., Brockt, G., Mendorf, C., Radefeld, A., Scholz, F., HÃ¤rle, V., Off, J., & Sohmer, A. (1997). Characterization of MOVPE-grown (Al, In, Ga) N heterostructures by quantitative analytical electron microscopy. Journal of Electronic Materials, 26(10), 1103â1108.

Authors 8

H. Lakner (first)
G. Brockt (additional)
C. Mendorf (additional)
A. Radefeld (additional)
F. Scholz (additional)
V. Härle (additional)
J. Off (additional)
A. Sohmer (additional)

References 13 Referenced 12

S. Nakamura, T. Mukai and M. Senoh, J. Appl. Phys. 76, 8189 (1994). (10.1063/1.357872) / J. Appl. Phys. by S. Nakamura (1994)
S. Nakamura, M. Senoh, Snagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku and Ysugimoto, Jpn. J. Appl. Phys. 35, L217 (1996). (10.1143/JJAP.35.L217)
H. Morkoç, S. Strite, G.B. Gao, M.E. Lin, B. Sverdolv and B. Bruns, J. Appl. Phys. 76 (1994). (10.1063/1.358463)
F. Scholz,. V. Härle, F. Streuber, A. Sohnmer, H. Bolay, V. Syganow, A. Dörnen, J.S. Im, A. Hangleiter, J.Y. Duboz, P. Galtier, E. Rosencher, O. Ambacher, D. Brunner and H. Lakner, Proc. MRS Fall Meeting 1996 Symp. N (III–V Nitrides) (Pittsburgh, PA: Mater. Res. Soc.).
I-hisu Ho and G.B. Stringfellow, Appl. Phys. Lett. 69, 2701 (1996). (10.1063/1.117683) / Appl. Phys. Lett. by I-hisu Ho (1996)
S. Strite and H. Morkoç, J. Vac. Sci. Technol. B 10, 1237 (1992). (10.1116/1.585897) / J. Vac. Sci. Technol. B by S. Strite (1992)
H. Lakner, M. Maywald, L.J. Balk and E. Kubalek, Surf. and Int. Anal. 19, 374, (1992). (10.1002/sia.740190170) / Surf. and Int. Anal. by H. Lakner (1992)
H. Lakner, B. Bollig, S. Ungerechts and E. Kubalek, J. Appl. Phys. 29, 1767 (1996). / J. Appl. Phys. by H. Lakner (1996)
J.C.H. Spence and J.M. Zuo, Electron Microdiffraction, (New York: Plenum Press, 1992). (10.1007/978-1-4899-2353-0) / Electron Microdiffraction by J.C.H. Spence (1992)
F. Scholz, V. Härle, F. Streuber, H. Bolay, A. Dörnen, B. Kaufmann, V. Syganow and A. Hangleiter, J. Cryst. Growth 170 (1997). (10.1016/S0022-0248(96)00606-9)
G. Brockt, C. Mendorf, A. Radefeld, F. Scholz and H. Lakner, to be published in Proc. Xth Conf. on Microscopy of Semiconduncting Materials, (1997).
J.C.H. Spence and J.M. Zuo, Electron Microdiffraction, (New York: Plenum Press, 1992), p. 209. (10.1007/978-1-4899-2353-0) / Electron Microdiffraction by J.C.H. Spence (1992)
V.A. Elyukhin and S.A. Nikishin, Semicond. Sci. Technol. 11, 917 (1996). (10.1088/0268-1242/11/6/011) / Semicond. Sci. Technol. by V.A. Elyukhin (1996)

Dates

Type	When
Created	18 years, 5 months ago (April 6, 2007, 6:50 a.m.)
Deposited	6 years, 3 months ago (June 1, 2019, 4:01 p.m.)
Indexed	1 year, 7 months ago (Feb. 6, 2024, 6:58 p.m.)
Issued	27 years, 11 months ago (Oct. 1, 1997)
Published	27 years, 11 months ago (Oct. 1, 1997)
Published Print	27 years, 11 months ago (Oct. 1, 1997)

Funders 0

None

BibTeX

@article{Lakner_1997, title={Characterization of MOVPE-grown (Al, In, Ga) N heterostructures by quantitative analytical electron microscopy}, volume={26}, ISSN={1543-186X}, url={http://dx.doi.org/10.1007/s11664-997-0002-2}, DOI={10.1007/s11664-997-0002-2}, number={10}, journal={Journal of Electronic Materials}, publisher={Springer Science and Business Media LLC}, author={Lakner, H. and Brockt, G. and Mendorf, C. and Radefeld, A. and Scholz, F. and Härle, V. and Off, J. and Sohmer, A.}, year={1997}, month=oct, pages={1103–1108} }

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