DOI: 10.1007/s11664-002-0218-0. Numerical modeling of fluctuation phenomena in semiconductors and detailed noise study of mid-wave infrared HgCdTe-heterostructure devices

Numerical modeling of fluctuation phenomena in semiconductors and detailed noise study of mid-wave infrared HgCdTe-heterostructure devices

10.1007/s11664-002-0218-0

Crossref journal-article

Springer Science and Business Media LLC

Journal of Electronic Materials (297)

Bibliography

JÃ³Åºwikowski, K., Rogalski, A., & JÃ³Åºwikowska, A. (2002). Numerical modeling of fluctuation phenomena in semiconductors and detailed noise study of mid-wave infrared HgCdTe-heterostructure devices. Journal of Electronic Materials, 31(7), 677â682.

Authors 3

K. Jóźwikowski (first)
A. Rogalski (additional)
A. Jóźwikowska (additional)

References 21 Referenced 4

B. Pellegrini, Solid State Electron. 29, 1279 (1986). (10.1016/0038-1101(86)90134-6) / Solid State Electron. by B. Pellegrini (1986)
J.P. Nougier, A. Moatadid, J.C. Vaissere, and D. Gasquet, Noise in Physical Systems and 1/f Noise (New York: Elsevier, 1986), pp. 105–108. / Noise in Physical Systems and 1/f Noise by J.P. Nougier (1986)
C.T. Elliott, N.T. Gordon, T.J. Philips, H. Steen, A.M. White, D.J. Wilson, C.L. Jones, C.D. Maxey, and N.E. Metcalfe, J. Electron. Mater. 25, 1146 (1996). (10.1007/BF02655000) / J. Electron. Mater. by C.T. Elliott (1996)
C.T. Elliott, N.T. Gordon, R.S. Hall, T.J. Philips, C.L. Jones, and A. Best, J. Electron. Mater. 26, 643 (1997). (10.1007/s11664-997-0209-2) / J. Electron. Mater. by C.T. Elliott (1997)
C.L. Jones, N.E. Metcalfe, A. Best, R. Catchpole, C.D. Maxey, N.T. Gordon, R.S. Hall, T. Colon, and T. Skauli, J. Electron. Mater. 27, 733 (1998). (10.1007/s11664-998-0045-z) / J. Electron. Mater. by C.L. Jones (1998)
K. Jóźwikowski, J. Appl. Phys. 90, 1318 (2001). (10.1063/1.1379562) / J. Appl. Phys. by K. Jóźwikowski (2001)
P.H. Handel, Phys. Rev. Lett. 34, 1492 (1975). (10.1103/PhysRevLett.34.1492) / Phys. Rev. Lett. by P.H. Handel (1975)
P.H. Handel, Phys. Rev. A 22, 745 (1980). (10.1103/PhysRevA.22.745) / Phys. Rev. A by P.H. Handel (1980)
G.S. Kousik, C.M. van Vliet, G. Bosman, and P.H. Handel, Adv. Phys. 34, 663 (1985). (10.1080/00018738500101831) / Adv. Phys. by G.S. Kousik (1985)
J.S. Blakemore, Semiconductor Statistic (New York: Pergamon Press, 1962). / Semiconductor Statistic by J.S. Blakemore (1962)
A. van der Ziel, Fluctuation Phenomena in Semiconductors (London: Butterworths Scientific, 1959). / Fluctuation Phenomena in Semiconductors by A. Ziel van der (1959)
P.E. Petersen, Semiconductors and Semimetals, vol. 18, eds. R.K. Willardson and A.C. Beer (New York: Academic Press, 1981), pp. 121–155. / Semiconductors and Semimetals, vol. 18 by P.E. Petersen (1981)
T.N. Casselman and P.E. Petersen, Solid State Commun. 33, 615 (1980). (10.1016/0038-1098(80)90736-X) / Solid State Commun. by T.N. Casselman (1980)
D.E. Lacklison and P. Capper, Semicond. Sci. Technol. 2, 33 (1987). (10.1088/0268-1242/2/1/005) / Semicond. Sci. Technol. by D.E. Lacklison (1987)
R.G. Pratt, J. Hewett, P. Capper, C.L. Jones, and M.J. Quelch, J. Appl. Phys. 54, 5152 (1983). (10.1063/1.332739) / J. Appl. Phys. by R.G. Pratt (1983)
R.G. Pratt, J. Hewett, P. Capper, C.L. Jones, and N. Judd, J. Appl. Phys. 60, 2377 (1986). (10.1063/1.337149) / J. Appl. Phys. by R.G. Pratt (1986)
R.B. Nag, Electron Transport in Compound Semiconductors (Berlin: Springer, 1980). (10.1007/978-3-642-81416-7) / Electron Transport in Compound Semiconductors by R.B. Nag (1980)
R.D.S. Yadawa, A.K. Gupta, and A.V.R. Warrier, J. Electron. Mater. 23, 1359 (1994). (10.1007/BF02649902) / J. Electron. Mater. by R.D.S. Yadawa (1994)
D. Chattopadhyay and B.R. Nag, Phys. Rev. B12, 5676 (1975). (10.1103/PhysRevB.12.5676) / Phys. Rev. by D. Chattopadhyay (1975)
N.F. Hooge, T.G.M. Kleinpenning, and L.K.J. Van Damme, Rep. Prog. Phys. 44, 479 (1981). (10.1088/0034-4885/44/5/001) / Rep. Prog. Phys. by N.F. Hooge (1981)
A. Rogalski, J. Rutkowski, and K. Adamiec, Narrow-Gap Semiconductor Photodiodes (Bellingham, WA: SPIE Optical Engineering Press, 2000). (10.1117/3.PM77) / Narrow-Gap Semiconductor Photodiodes by A. Rogalski (2000)

Dates

Type	When
Created	18 years, 4 months ago (April 16, 2007, 5:30 a.m.)
Deposited	6 years, 3 months ago (June 1, 2019, 3:44 p.m.)
Indexed	1 year, 6 months ago (Feb. 7, 2024, 6:39 p.m.)
Issued	23 years, 2 months ago (July 1, 2002)
Published	23 years, 2 months ago (July 1, 2002)
Published Print	23 years, 2 months ago (July 1, 2002)

Funders 0

None

BibTeX

@article{J_wikowski_2002, title={Numerical modeling of fluctuation phenomena in semiconductors and detailed noise study of mid-wave infrared HgCdTe-heterostructure devices}, volume={31}, ISSN={1543-186X}, url={http://dx.doi.org/10.1007/s11664-002-0218-0}, DOI={10.1007/s11664-002-0218-0}, number={7}, journal={Journal of Electronic Materials}, publisher={Springer Science and Business Media LLC}, author={Jóźwikowski, K. and Rogalski, A. and Jóźwikowska, A.}, year={2002}, month=jul, pages={677–682} }

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