DOI: 10.1007/s10853-014-8370-5. Theoretical study on strain-induced variations in electronic properties of monolayer MoS2

Theoretical study on strain-induced variations in electronic properties of monolayer MoS2

10.1007/s10853-014-8370-5

Crossref journal-article

Springer Science and Business Media LLC

Journal of Materials Science (297)

Bibliography

Dong, L., Namburu, R. R., OâRegan, T. P., Dubey, M., & Dongare, A. M. (2014). Theoretical study on strain-induced variations in electronic properties of monolayer MoS2. Journal of Materials Science, 49(19), 6762â6771.

Authors 5

Liang Dong (first)
Raju R. Namburu (additional)
Terrance P. O’Regan (additional)
Madan Dubey (additional)
Avinash M. Dongare (additional)

References 40 Referenced 71

Novoselov KS, Geim AK, Morozov SV, Jiang D, Zhang Y, Dubonos SV, Grigorieva IV, Firsov AA (2004) Electric field effect in atomically thin carbon films. Science 306:666–669. doi: 10.1126/science.1102896 (10.1126/science.1102896) / Science by KS Novoselov (2004)
Novoselov KS, Jiang D, Schedin F, Booth TJ, Khotkevich VV, Morozov SV, Geim AK (2005) Two-dimensional atomic crystals. Proc Natl Acad Sci USA 102:10451–10453. doi: 10.1073/pnas.0502848102 (10.1073/pnas.0502848102) / Proc Natl Acad Sci USA by KS Novoselov (2005)
Butler SZ, Hollen SM, Cao L, Cui Y, Gupta JA, Gutiérrez HR, Heinz TF, Hong SS, Huang J, Ismach AF, Johnston-Halperin E, Kuno M, Plashnitsa VV, Robinson RD, Ruoff RS, Salahuddin S, Shan J, Shi L, Spencer MG, Terrones M, Windl W, Goldberger JE (2013) Progress, challenges, and opportunities in two-dimensional materials beyond graphene. ACS Nano 7:2898–2926. doi: 10.1021/nn400280c (10.1021/nn400280c) / ACS Nano by SZ Butler (2013)
Mak KF, Lee C, Hone J, Shan J, Heinz TF (2010) Atomically Thin MoS2: a new direct-gap semiconductor. Phys Rev Lett 105:136805. doi: 10.1103/PhysRevLett.105.136805 (10.1103/PhysRevLett.105.136805) / Phys Rev Lett by KF Mak (2010)
Radisavljevic B, Radenovic A, Brivio J, Giacometti V, Kis A (2011) Single-layer MoS2 transistors. Nat Nanotech 6:147–150. doi: 10.1038/nnano.2010.279 (10.1038/nnano.2010.279) / Nat Nanotech by B Radisavljevic (2011)
Wang QH, Kalantar-Zadeh K, Kis A, Coleman JN, Strano MS (2012) Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nat Nanotech 7:699–712. doi: 10.1038/nnano.2012.193 (10.1038/nnano.2012.193) / Nat Nanotech by QH Wang (2012)
Yin Z, Li H, Li H, Jiang L, Shi Y, Sun Y, Lu G, Zhang Q, Chen X, Zhang H (2011) Single-Layer MoS2 Phototransistors. ACS Nano 6:74–80. doi: 10.1021/nn2024557 (10.1021/nn2024557) / ACS Nano by Z Yin (2011)
Sundaram RS, Engel M, Lombardo A, Krupke R, Ferrari AC, Avouris P, Steiner M (2013) Electroluminescence in Single Layer MoS2. Nano Lett 13:1416–1421. doi: 10.1021/nl400516a (10.1021/nl400516a) / Nano Lett by RS Sundaram (2013)
Jaramillo TF, Jørgensen KP, Bonde J, Nielsen JH, Horch S, Chorkendorff I (2007) Identification of active edge sites for electrochemical H2 evolution from MoS2 nanocatalysts. Science 317:100–102. doi: 10.1126/science.1141483 (10.1126/science.1141483) / Science by TF Jaramillo (2007)
Tuxen A, Kibsgaard J, Gøbel H, Lægsgaard E, Topsøe H, Lauritsen JV, Besenbacher F (2010) Size threshold in the dibenzothiophene adsorption on MoS2 nanoclusters. ACS Nano 4:4677–4682. doi: 10.1021/nn1011013 (10.1021/nn1011013) / ACS Nano by A Tuxen (2010)
Holzapfel WB (1996) Physics of solids under strong compression. Rep Prog Phys 59:29. doi: 10.1088/0034-4885/59/1/002 (10.1088/0034-4885/59/1/002) / Rep Prog Phys by WB Holzapfel (1996)
Osbourn GC (1982) Strained-layer superlattices from lattice mismatched materials. J Appl Phys 53:1586–1589. doi: 10.1063/1.330615 (10.1063/1.330615) / J Appl Phys by GC Osbourn (1982)
Ni ZH, Yu T, Lu YH, Wang YY, Feng YP, Shen ZX (2008) Uniaxial strain on graphene: raman spectroscopy study and band-gap opening. ACS Nano 2:2301–2305. doi: 10.1021/nn800459e (10.1021/nn800459e) / ACS Nano by ZH Ni (2008)
Pereira VM, Castro Neto AH (2009) Strain engineering of graphene’s electronic structure. Phys Rev Lett 103:046801. doi: 10.1103/PhysRevLett.103.046801 (10.1103/PhysRevLett.103.046801) / Phys Rev Lett by VM Pereira (2009)
Ding F, Ji H, Chen Y, Herklotz A, Dörr K, Mei Y, Rastelli A, Schmidt OG (2010) stretchable graphene: a close look at fundamental parameters through biaxial straining. Nano Lett 10:3453–3458. doi: 10.1021/nl101533x (10.1021/nl101533x) / Nano Lett by F Ding (2010)
Pan W, Xiao J, Zhu J, Yu C, Zhang G, Ni Z, Watanabe K, Taniguchi T, Shi Y, Wang X (2012) Biaxial compressive strain engineering in graphene/boron nitride heterostructures. Sci Rep 2:893. doi: 10.1038/srep00893 (10.1038/srep00893) / Sci Rep by W Pan (2012)
He K, Poole C, Mak KF, Shan J (2013) Experimental demonstration of continuous electronic structure tuning via strain in atomically thin MoS2. Nano Lett 13:2931–2936. doi: 10.1021/nl4013166 (10.1021/nl4013166) / Nano Lett by K He (2013)
Conley HJ, Wang B, Ziegler JI, Haglund RF, Pantelides ST, Bolotin KI (2013) Bandgap engineering of strained monolayer and bilayer MoS2. Nano Lett 13:3626–3630. doi: 10.1021/nl4014748 (10.1021/nl4014748) / Nano Lett by HJ Conley (2013)
Bertolazzi S, Brivio J, Kis A (2011) Stretching and breaking of ultrathin MoS2. ACS Nano 5:9703–9709. doi: 10.1021/nn203879f (10.1021/nn203879f) / ACS Nano by S Bertolazzi (2011)
Johari P, Shenoy VB (2012) Tuning the electronic properties of semiconducting transition metal dichalcogenides by applying mechanical strains. ACS Nano 6:5449–5456. doi: 10.1021/nn301320r (10.1021/nn301320r) / ACS Nano by P Johari (2012)
Sengupta A, Ghosh RK, Mahapatra S (2013) Performance analysis of strained monolayer MoS2 mosfet. IEEE Trans Electron Devices 60:2782–2787. doi: 10.1109/TED.2013.2273456 (10.1109/TED.2013.2273456) / IEEE Trans Electron Devices by A Sengupta (2013)
Scalise E, Houssa M, Pourtois G, Afanas’ev VV, Stesmans A (2014) First-principles study of strained 2D MoS2. Phys E 56:416–421. doi: 10.1016/j.physe.2012.07.029 (10.1016/j.physe.2012.07.029) / Phys E by E Scalise (2014)
Yun WS, Han SW, Hong SC, Kim IG, Lee JD (2012) Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX 2 semiconductors (M = Mo, W; X = S, Se, Te). Phys Rev B 85:033305. doi: 10.1103/PhysRevB.85.033305 (10.1103/PhysRevB.85.033305) / Phys Rev B by WS Yun (2012)
Yue Q, Kang J, Shao Z, Zhang X, Chang S, Wang G, Qin S, Li J (2012) Mechanical and electronic properties of monolayer MoS2 under elastic strain. Phys Lett A 376:1166–1170. doi: 10.1016/j.physleta.2012.02.029 (10.1016/j.physleta.2012.02.029) / Phys Lett A by Q Yue (2012)
Shi H, Pan H, Zhang Y-W, Yakobson BI (2013) Quasiparticle band structures and optical properties of strained monolayer MoS2 and WS2. Phys Rev B 87:155304. doi: 10.1103/PhysRevB.87.155304 (10.1103/PhysRevB.87.155304) / Phys Rev B by H Shi (2013)
Blochl PE (1994) Projector augmented-wave method. Phys Rev B 50:17953. doi: 10.1103/PhysRevB.50.17953 (10.1103/PhysRevB.50.17953) / Phys Rev B by PE Blochl (1994)
Kresse G, Furthmüller J (1996) Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set. Phys Rev B 54:11169. doi: 10.1103/PhysRevB.54.11169 (10.1103/PhysRevB.54.11169) / Phys Rev B by G Kresse (1996)
Perdew JP, Burke K, Ernzerhof M (1996) Generalized gradient approximation made simple. Phys Rev Lett 77:3865–3868. doi: 10.1103/PhysRevLett.77.3865 (10.1103/PhysRevLett.77.3865) / Phys Rev Lett by JP Perdew (1996)
Sham LJ, Schlüter M (1983) Density-functional theory of the energy gap. Phys Rev Lett 51:1888–1891. doi: 10.1103/PhysRevLett.51.1888 (10.1103/PhysRevLett.51.1888) / Phys Rev Lett by LJ Sham (1983)
Heyd J, Scuseria GE, Ernzerhof M (2003) Hybrid functionals based on a screened Coulomb potential. J Chem Phys 118:8207–8215. doi: 10.1063/1.1564060 (10.1063/1.1564060) / J Chem Phys by J Heyd (2003)
Fuchs F, Furthmüller J, Bechstedt F, Shishkin M, Kresse G (2007) Quasiparticle band structure based on a generalized Kohn–Sham scheme. Phys Rev B 76:115109. doi: 10.1103/PhysRevB.76.115109 (10.1103/PhysRevB.76.115109) / Phys Rev B by F Fuchs (2007)
Hafner J (2008) Ab-initio simulations of materials using VASP: density-functional theory and beyond. J Comput Chem 29:2044–2078. doi: 10.1002/jcc.21057 (10.1002/jcc.21057) / J Comput Chem by J Hafner (2008)
Ellis JK, Lucero MJ, Scuseria GE (2011) The indirect to direct band gap transition in multilayered MoS2 as predicted by screened hybrid density functional theory. Appl Phys Lett 99:261908. doi: 10.1063/1.3672219 (10.1063/1.3672219) / Appl Phys Lett by JK Ellis (2011)
Cheiwchanchamnangij T, Lambrecht WRL (2012) Quasiparticle band structure calculation of monolayer, bilayer, and bulk MoS2. Phys Rev B 85:205302. doi: 10.1103/PhysRevB.85.205302 (10.1103/PhysRevB.85.205302) / Phys Rev B by T Cheiwchanchamnangij (2012)
Yu Y, Li C, Liu Y, Su L, Zhang Y, Cao L (2013) Controlled scalable synthesis of uniform, high-quality monolayer and few-layer MoS2 films. Sci Rep 3:1866. doi: 10.1038/srep01866 (10.1038/srep01866) / Sci Rep by Y Yu (2013)
Böker T, Severin R, Müller A, Janowitz C, Manzke R, Voß D, Krüger P, Mazur A, Pollmann J (2001) Band structure of MoS2, MoSe2, and α-MoTe2: angle-resolved photoelectron spectroscopy and ab initio calculations. Phys Rev B 64:235305. doi: 10.1103/PhysRevB.64.235305 (10.1103/PhysRevB.64.235305) / Phys Rev B by T Böker (2001)
Lu P, Wu X, Guo W, Zeng XC (2012) Strain-dependent electronic and magnetic properties of MoS2 monolayer, bilayer, nanoribbons and nanotubes. Phys Chem Chem Phys 14:13035–13040. doi: 10.1039/c2cp42181j (10.1039/c2cp42181j) / Phys Chem Chem Phys by P Lu (2012)
Peelaers H, Van de Walle CG (2012) Effects of strain on band structure and effective masses in MoS2. Phys Rev B 86:241401. doi: 10.1103/PhysRevB.86.241401 (10.1103/PhysRevB.86.241401) / Phys Rev B by H Peelaers (2012)
Li Y, Zhou Z, Zhang S, Chen Z (2008) MoS2 Nanoribbons: high stability and unusual electronic and magnetic properties. J Am Chem Soc 130:16739–16744. doi: 10.1021/ja805545x (10.1021/ja805545x) / J Am Chem Soc by Y Li (2008)
Pan H, Zhang Y-W (2012) Edge-dependent structural, electronic and magnetic properties of MoS2 nanoribbons. J Mater Chem 22:7280–7290. doi: 10.1039/c2jm15906f (10.1039/c2jm15906f) / J Mater Chem by H Pan (2012)

Dates

Type	When
Created	11 years, 2 months ago (June 19, 2014, 8:01 a.m.)
Deposited	6 years ago (Aug. 11, 2019, 10:48 a.m.)
Indexed	3 weeks, 5 days ago (Aug. 6, 2025, 9:33 a.m.)
Issued	11 years, 2 months ago (June 20, 2014)
Published	11 years, 2 months ago (June 20, 2014)
Published Online	11 years, 2 months ago (June 20, 2014)
Published Print	10 years, 11 months ago (Oct. 1, 2014)

Funders 0

None

BibTeX

@article{Dong_2014, title={Theoretical study on strain-induced variations in electronic properties of monolayer MoS2}, volume={49}, ISSN={1573-4803}, url={http://dx.doi.org/10.1007/s10853-014-8370-5}, DOI={10.1007/s10853-014-8370-5}, number={19}, journal={Journal of Materials Science}, publisher={Springer Science and Business Media LLC}, author={Dong, Liang and Namburu, Raju R. and O’Regan, Terrance P. and Dubey, Madan and Dongare, Avinash M.}, year={2014}, month=jun, pages={6762–6771} }

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      "unstructured": "Scalise E, Houssa M, Pourtois G, Afanas\u2019ev VV, Stesmans A (2014) First-principles study of strained 2D MoS2. Phys E 56:416\u2013421. doi: 10.1016/j.physe.2012.07.029",
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