DOI: 10.1007/s10832-007-9068-8. Defect structure of oxide ferroelectrics—valence state, site of incorporation, mechanisms of charge compensation and internal bias fields

Defect structure of oxide ferroelectrics—valence state, site of incorporation, mechanisms of charge compensation and internal bias fields

10.1007/s10832-007-9068-8

Crossref journal-article

Springer Science and Business Media LLC

Journal of Electroceramics (297)

Bibliography

Eichel, R.-A. (2007). Defect structure of oxide ferroelectricsâvalence state, site of incorporation, mechanisms of charge compensation and internal bias fields. Journal of Electroceramics, 19(1), 11â23.

Authors 1

Rüdiger-A. Eichel (first)

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Dates

Type	When
Created	18 years, 4 months ago (April 23, 2007, 1:01 p.m.)
Deposited	1 year, 6 months ago (Feb. 13, 2024, 10:32 a.m.)
Indexed	4 weeks, 2 days ago (Aug. 6, 2025, 9:31 a.m.)
Issued	18 years, 4 months ago (April 24, 2007)
Published	18 years, 4 months ago (April 24, 2007)
Published Online	18 years, 4 months ago (April 24, 2007)
Published Print	17 years, 10 months ago (Oct. 20, 2007)

Funders 0

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BibTeX

@article{Eichel_2007, title={Defect structure of oxide ferroelectrics—valence state, site of incorporation, mechanisms of charge compensation and internal bias fields: Invited review for J. Electroceram.}, volume={19}, ISSN={1573-8663}, url={http://dx.doi.org/10.1007/s10832-007-9068-8}, DOI={10.1007/s10832-007-9068-8}, number={1}, journal={Journal of Electroceramics}, publisher={Springer Science and Business Media LLC}, author={Eichel, Rüdiger-A.}, year={2007}, month=apr, pages={11–23} }

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