DOI: 10.1007/s00339-011-6269-4. Intrinsic constrains on thermally-assisted memristive switching

Intrinsic constrains on thermally-assisted memristive switching

10.1007/s00339-011-6269-4

Crossref journal-article

Springer Science and Business Media LLC

Applied Physics A (297)

Bibliography

Strukov, D. B., & Williams, R. S. (2011). Intrinsic constrains on thermally-assisted memristive switching. Applied Physics A, 102(4), 851â855.

Authors 2

Dmitri B. Strukov (first)
R. Stanley Williams (additional)

References 28 Referenced 26

M. Abramowitz, I.A. Stegun, Handbook of Mathematical Functions: with Formulas, Graphs, and Mathematical Tables (Dover, New York, 1965) / Handbook of Mathematical Functions: with Formulas, Graphs, and Mathematical Tables by M. Abramowitz (1965)
J. Borghetti, D.B. Strukov, M. Pickett, J. Yang, R.S. Williams, Electrical transport and thermometry of electroformed titanium dioxide memristive switches. J. Appl. Phys. 106, 124504 (2009) (10.1063/1.3264621) / J. Appl. Phys. by J. Borghetti (2009)
S.H. Chang, S.C. Chae, S.B. Lee, C. Liu, T.W. Noh, J.S. Lee, B. Kahng, J.H. Jang, M.Y. Kim, D.-W. Kim, C.U. Jung, Effects of heat dissipation on unipolar resistance switching in Pt/NiO/Pt capacitors. Appl. Phys. Lett. 92, 183507 (2008) / Appl. Phys. Lett. by S.H. Chang (2008)
Y.C. Chen, C.T. Rettner, S. Raoux, G.W. Burr, S.H. Chen, R.M. Shelby, M. Salinga, W.P. Risk, T.D. Happ, G.M. McClelland, M. Breitwischt, A. Schrott, J.B. Philipps, M.H. Lee, R. Cheek, T. Nirschl, M. Lamorey, C.F. Chen, E. Joseph, S. Zaidi, B. Yee, H.L. Lung, R. Bergmann, C. Lam, Ultra-thin phase-change bridge memory device using GeSb, in Proc. International Electron Devices Meeting, San Francisco, CA, December 2006, art. 4154329 (2006) / Proc. International Electron Devices Meeting by Y.C. Chen (2006)
L.O. Chua, S.M. Kang, Memristive devices and systems. Proc. IEEE 64, 209–223 (1976) (10.1109/PROC.1976.10092) / Proc. IEEE by L.O. Chua (1976)
COMSOL software. Available online at http://www.comsol.com
G. Dearnaley, A.M. Stoneham, D.V. Morgan, Electrical phenomena in amorphous oxide films. Rep. Prog. Phys. 33, 1129–1192 (1970) (10.1088/0034-4885/33/3/306) / Rep. Prog. Phys. by G. Dearnaley (1970)
J.E. Green, J.W. Choi, A. Boukai, Y. Bunimovich, E. Johnston-Halperin, E. DeIonno, Y. Luo, B.A. Sheriff, K. Xu, Y.S. Shin, H.-R. Tseng, J.F. Stoddart, J.R. Heath, A 160-kilobit molecular electronic memory patterned at 1011 bits per square centimetre. Nature 445, 414–417 (2007) (10.1038/nature05462) / Nature by J.E. Green (2007)
M.T. Hickmott, Low-frequency negative resistance in thin anodic oxide films. J. Appl. Phys. 33, 2669–2682 (1962) (10.1063/1.1702530) / J. Appl. Phys. by M.T. Hickmott (1962)
S.H. Jo, K.-H. Kim, W. Lu, High-density crossbar arrays based on a Si memristive system. Nano Lett. 9, 870–874 (2009) (10.1021/nl8037689) / Nano Lett. by S.H. Jo (2009)
S.F. Karg, G.I. Meijer, J.G. Bednorz, C.T. Rettner, A.G. Schrott, E.A. Joseph, C.H. Lam, M. Janousch, U. Staub, F. La Mattina, S.F. Alvarado, D. Widmer, R. Stutz, U. Drechsler, D. Caimi, Transition-metal oxide-based resistance change memories. IBM J. Res. Dev. 52(4/5), 481–492 (2008) (10.1147/rd.524.0481) / IBM J. Res. Dev. by S.F. Karg (2008)
C. Kittel, Introduction to Solid State Physics, 7th edn. (Wiley, New York, 1995) / Introduction to Solid State Physics by C. Kittel (1995)
M.-J. Lee, C.B. Lee, S. Kim, H. Yin, J. Park, S.E. Ahn, B.S. Kang, K.H. Kim, G. Stefanovich, I. Song, J.H. Lee, S.W. Kim, S.J. Chung, Y.H. Kim, C.S. Lee, J.B. Park, I.G. Baek, C.J. Kim, Y. Park, Stack friendly all-oxide 3D RRAM using GaInZnO peripheral TFT realized over glass substrates, in Proc. International Electron Devices Meeting, San Francisco, CA, December 2008, art. 4796620 (2008) / Proc. International Electron Devices Meeting by M.-J. Lee (2008)
K. Likharev, A. Mayr, I. Muckra, Ö. Türel, CrossNets: high-performance neuromorphic architectures for CMOL circuits. Ann. N.Y. Acad. Sci. 1006, 146–163 (2003) (10.1196/annals.1292.010) / Ann. N.Y. Acad. Sci. by K. Likharev (2003)
K.K. Likharev, CMOL technology: devices, circuits, and architectures. J. Nanoelectron. Optoelectron. 3, 203–230 (2008) (10.1166/jno.2008.301) / J. Nanoelectron. Optoelectron. by K.K. Likharev (2008)
T. Mikolajick, M. Salinga, M. Kund, T. Kever, Nonvolatile memory concepts based on resistive switching in inorganic materials. Adv. Mater. 11(4), 235–240 (2009) (10.1002/adem.200800294) / Adv. Mater. by T. Mikolajick (2009)
H. Pagnia, N. Sotnik, Bistable switching in electroformed metal-insulator-metal devices. Phys. Status Solidi A 108(11), 11–65 (1988) (10.1002/pssa.2211080102) / Phys. Status Solidi A by H. Pagnia (1988)
U. Russo, D. Ielmini, C. Cagli, A.L. Lacaita, S. Spigat, C. Wiemert, M. Peregot, M. Fanciulli, Conductive-filament switching analysis and self-accelerated thermal dissolution model for reset in NiO-based RRAM, in Proc. International Electron Devices Meeting, Baltimore MD, December 2007, pp. 775–778, art. 4419062 (2007) / Proc. International Electron Devices Meeting by U. Russo (2007)
U. Russo, D. Ielmini, A. Redaelli, A.L. Lacaita, Modeling of programming and read performance in phase-change memories—part I: cell optimization and scaling. IEEE Trans. Electron Devices 55(2), 506–514 (2008) (10.1109/TED.2007.911630) / IEEE Trans. Electron Devices by U. Russo (2008)
G.S. Snider, R.S. Williams, Nano/CMOS architectures using a field-programmable nanowire interconnect. Nanotechnology 18, 035204 (2007) / Nanotechnology by G.S. Snider (2007)
D.B. Strukov, K.K. Likharev, Defect-tolerant architectures for nanoelectronic crossbar memories. J. Nanosci. Nanotechnol. 7, 151–167 (2007) (10.1166/jnn.2007.18012) / J. Nanosci. Nanotechnol. by D.B. Strukov (2007)
D.B. Strukov, K.K. Likharev, Reconfigurable hybrid CMOS/nanodevice circuits for image processing. IEEE Trans. Nanotechnol. 6, 696–710 (2007) (10.1109/TNANO.2007.907841) / IEEE Trans. Nanotechnol. by D.B. Strukov (2007)
D.B. Strukov, G.S. Snider, D.R. Stewart, R.S. Williams, The missing memristor found. Nature 453, 80–83 (2008) (10.1038/nature06932) / Nature by D.B. Strukov (2008)
D.B. Strukov, J.L. Borghetti, R.S. Williams, Coupled ionic and electronic transport model of thin-film semiconductor memristive behavior. Small 5(9), 1058–1063 (2009) (10.1002/smll.200801323) / Small by D.B. Strukov (2009)
D.B. Strukov, R.S. Williams, Exponential ionic drift: fast switching and low volatility of thin film memristors. Appl. Phys. A 94(3), 515–519 (2009) (10.1007/s00339-008-4975-3) / Appl. Phys. A by D.B. Strukov (2009)
R. Waser, M. Aono, Nanoionics-based resistive switching memories. Nat. Mater. 6, 833–840 (2007) (10.1038/nmat2023) / Nat. Mater. by R. Waser (2007)
M. Wuttig, N. Yamada, Phase-change materials for rewriteable data storage. Nat. Mater. 6, 824–832 (2007) (10.1038/nmat2009) / Nat. Mater. by M. Wuttig (2007)
V.V. Zhirnov, R.K. Cavin, S. Menzel, E. Linn, S. Schmelzer, D. Brauhaus, C. Schindler, R. Waser, Memory devices: energy-space-time tradeoffs. Proc. IEEE 98(12), 2185–2200 (2010) (10.1109/JPROC.2010.2064271) / Proc. IEEE by V.V. Zhirnov (2010)

Dates

Type	When
Created	14 years, 7 months ago (Jan. 25, 2011, 9:05 a.m.)
Deposited	5 years, 2 months ago (June 15, 2020, 8:52 p.m.)
Indexed	1 year, 10 months ago (Oct. 11, 2023, 3:13 p.m.)
Issued	14 years, 7 months ago (Jan. 26, 2011)
Published	14 years, 7 months ago (Jan. 26, 2011)
Published Online	14 years, 7 months ago (Jan. 26, 2011)
Published Print	14 years, 5 months ago (March 1, 2011)

Funders 0

None

BibTeX

@article{Strukov_2011, title={Intrinsic constrains on thermally-assisted memristive switching}, volume={102}, ISSN={1432-0630}, url={http://dx.doi.org/10.1007/s00339-011-6269-4}, DOI={10.1007/s00339-011-6269-4}, number={4}, journal={Applied Physics A}, publisher={Springer Science and Business Media LLC}, author={Strukov, Dmitri B. and Williams, R. Stanley}, year={2011}, month=jan, pages={851–855} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2023,
        10,
        11
      ]
    ],
    "date-time": "2023-10-11T19:13:31Z",
    "timestamp": 1697051611415
  },
  "reference-count": 28,
  "publisher": "Springer Science and Business Media LLC",
  "issue": "4",
  "content-domain": {
    "domain": [],
    "crossmark-restriction": false
  },
  "published-print": {
    "date-parts": [
      [
        2011,
        3
      ]
    ]
  },
  "DOI": "10.1007/s00339-011-6269-4",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2011,
        1,
        25
      ]
    ],
    "date-time": "2011-01-25T14:05:30Z",
    "timestamp": 1295964330000
  },
  "page": "851-855",
  "source": "Crossref",
  "is-referenced-by-count": 26,
  "title": "Intrinsic constrains on thermally-assisted memristive switching",
  "prefix": "10.1007",
  "volume": "102",
  "author": [
    {
      "given": "Dmitri B.",
      "family": "Strukov",
      "sequence": "first",
      "affiliation": []
    },
    {
      "given": "R. Stanley",
      "family": "Williams",
      "sequence": "additional",
      "affiliation": []
    }
  ],
  "member": "297",
  "published-online": {
    "date-parts": [
      [
        2011,
        1,
        26
      ]
    ]
  },
  "reference": [
    {
      "key": "6269_CR1",
      "volume-title": "Handbook of Mathematical Functions: with Formulas, Graphs, and Mathematical Tables",
      "author": "M. Abramowitz",
      "year": "1965",
      "unstructured": "M. Abramowitz, I.A. Stegun, Handbook of Mathematical Functions: with Formulas, Graphs, and Mathematical Tables (Dover, New York, 1965)"
    },
    {
      "key": "6269_CR2",
      "doi-asserted-by": "crossref",
      "DOI": "10.1063/1.3264621",
      "volume": "106",
      "author": "J. Borghetti",
      "year": "2009",
      "unstructured": "J. Borghetti, D.B. Strukov, M. Pickett, J. Yang, R.S. Williams, Electrical transport and thermometry of electroformed titanium dioxide memristive switches. J. Appl. Phys. 106, 124504 (2009)",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "6269_CR3",
      "volume": "92",
      "author": "S.H. Chang",
      "year": "2008",
      "unstructured": "S.H. Chang, S.C. Chae, S.B. Lee, C. Liu, T.W. Noh, J.S. Lee, B. Kahng, J.H. Jang, M.Y. Kim, D.-W. Kim, C.U. Jung, Effects of heat dissipation on unipolar resistance switching in Pt/NiO/Pt capacitors. Appl. Phys. Lett. 92, 183507 (2008)",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "6269_CR4",
      "volume-title": "Proc. International Electron Devices Meeting",
      "author": "Y.C. Chen",
      "year": "2006",
      "unstructured": "Y.C. Chen, C.T. Rettner, S. Raoux, G.W. Burr, S.H. Chen, R.M. Shelby, M. Salinga, W.P. Risk, T.D. Happ, G.M. McClelland, M. Breitwischt, A. Schrott, J.B. Philipps, M.H. Lee, R. Cheek, T. Nirschl, M. Lamorey, C.F. Chen, E. Joseph, S. Zaidi, B. Yee, H.L. Lung, R. Bergmann, C. Lam, Ultra-thin phase-change bridge memory device using GeSb, in Proc. International Electron Devices Meeting, San Francisco, CA, December 2006, art. 4154329 (2006)"
    },
    {
      "key": "6269_CR5",
      "doi-asserted-by": "crossref",
      "first-page": "209",
      "DOI": "10.1109/PROC.1976.10092",
      "volume": "64",
      "author": "L.O. Chua",
      "year": "1976",
      "unstructured": "L.O. Chua, S.M. Kang, Memristive devices and systems. Proc. IEEE 64, 209\u2013223 (1976)",
      "journal-title": "Proc. IEEE"
    },
    {
      "key": "6269_CR6",
      "unstructured": "COMSOL software. Available online at http://www.comsol.com"
    },
    {
      "key": "6269_CR7",
      "doi-asserted-by": "crossref",
      "first-page": "1129",
      "DOI": "10.1088/0034-4885/33/3/306",
      "volume": "33",
      "author": "G. Dearnaley",
      "year": "1970",
      "unstructured": "G. Dearnaley, A.M. Stoneham, D.V. Morgan, Electrical phenomena in amorphous oxide films. Rep. Prog. Phys. 33, 1129\u20131192 (1970)",
      "journal-title": "Rep. Prog. Phys."
    },
    {
      "key": "6269_CR8",
      "doi-asserted-by": "crossref",
      "first-page": "414",
      "DOI": "10.1038/nature05462",
      "volume": "445",
      "author": "J.E. Green",
      "year": "2007",
      "unstructured": "J.E. Green, J.W. Choi, A. Boukai, Y. Bunimovich, E. Johnston-Halperin, E. DeIonno, Y. Luo, B.A. Sheriff, K. Xu, Y.S. Shin, H.-R. Tseng, J.F. Stoddart, J.R. Heath, A 160-kilobit molecular electronic memory patterned at 1011 bits per square centimetre. Nature 445, 414\u2013417 (2007)",
      "journal-title": "Nature"
    },
    {
      "key": "6269_CR9",
      "doi-asserted-by": "crossref",
      "first-page": "2669",
      "DOI": "10.1063/1.1702530",
      "volume": "33",
      "author": "M.T. Hickmott",
      "year": "1962",
      "unstructured": "M.T. Hickmott, Low-frequency negative resistance in thin anodic oxide films. J. Appl. Phys. 33, 2669\u20132682 (1962)",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "6269_CR10",
      "doi-asserted-by": "crossref",
      "first-page": "870",
      "DOI": "10.1021/nl8037689",
      "volume": "9",
      "author": "S.H. Jo",
      "year": "2009",
      "unstructured": "S.H. Jo, K.-H. Kim, W. Lu, High-density crossbar arrays based on a Si memristive system. Nano Lett. 9, 870\u2013874 (2009)",
      "journal-title": "Nano Lett."
    },
    {
      "issue": "4/5",
      "key": "6269_CR11",
      "doi-asserted-by": "crossref",
      "first-page": "481",
      "DOI": "10.1147/rd.524.0481",
      "volume": "52",
      "author": "S.F. Karg",
      "year": "2008",
      "unstructured": "S.F. Karg, G.I. Meijer, J.G. Bednorz, C.T. Rettner, A.G. Schrott, E.A. Joseph, C.H. Lam, M. Janousch, U. Staub, F. La Mattina, S.F. Alvarado, D. Widmer, R. Stutz, U. Drechsler, D. Caimi, Transition-metal oxide-based resistance change memories. IBM J. Res. Dev. 52(4/5), 481\u2013492 (2008)",
      "journal-title": "IBM J. Res. Dev."
    },
    {
      "key": "6269_CR12",
      "volume-title": "Introduction to Solid State Physics",
      "author": "C. Kittel",
      "year": "1995",
      "unstructured": "C. Kittel, Introduction to Solid State Physics, 7th edn. (Wiley, New York, 1995)",
      "edition": "7"
    },
    {
      "key": "6269_CR13",
      "volume-title": "Proc. International Electron Devices Meeting",
      "author": "M.-J. Lee",
      "year": "2008",
      "unstructured": "M.-J. Lee, C.B. Lee, S. Kim, H. Yin, J. Park, S.E. Ahn, B.S. Kang, K.H. Kim, G. Stefanovich, I. Song, J.H. Lee, S.W. Kim, S.J. Chung, Y.H. Kim, C.S. Lee, J.B. Park, I.G. Baek, C.J. Kim, Y. Park, Stack friendly all-oxide 3D RRAM using GaInZnO peripheral TFT realized over glass substrates, in Proc. International Electron Devices Meeting, San Francisco, CA, December 2008, art. 4796620 (2008)"
    },
    {
      "key": "6269_CR14",
      "doi-asserted-by": "crossref",
      "first-page": "146",
      "DOI": "10.1196/annals.1292.010",
      "volume": "1006",
      "author": "K. Likharev",
      "year": "2003",
      "unstructured": "K. Likharev, A. Mayr, I. Muckra, \u00d6. T\u00fcrel, CrossNets: high-performance neuromorphic architectures for CMOL circuits. Ann. N.Y. Acad. Sci. 1006, 146\u2013163 (2003)",
      "journal-title": "Ann. N.Y. Acad. Sci."
    },
    {
      "key": "6269_CR15",
      "doi-asserted-by": "crossref",
      "first-page": "203",
      "DOI": "10.1166/jno.2008.301",
      "volume": "3",
      "author": "K.K. Likharev",
      "year": "2008",
      "unstructured": "K.K. Likharev, CMOL technology: devices, circuits, and architectures. J. Nanoelectron. Optoelectron. 3, 203\u2013230 (2008)",
      "journal-title": "J. Nanoelectron. Optoelectron."
    },
    {
      "issue": "4",
      "key": "6269_CR16",
      "doi-asserted-by": "crossref",
      "first-page": "235",
      "DOI": "10.1002/adem.200800294",
      "volume": "11",
      "author": "T. Mikolajick",
      "year": "2009",
      "unstructured": "T. Mikolajick, M. Salinga, M. Kund, T. Kever, Nonvolatile memory concepts based on resistive switching in inorganic materials. Adv. Mater. 11(4), 235\u2013240 (2009)",
      "journal-title": "Adv. Mater."
    },
    {
      "issue": "11",
      "key": "6269_CR17",
      "doi-asserted-by": "crossref",
      "first-page": "11",
      "DOI": "10.1002/pssa.2211080102",
      "volume": "108",
      "author": "H. Pagnia",
      "year": "1988",
      "unstructured": "H. Pagnia, N. Sotnik, Bistable switching in electroformed metal-insulator-metal devices. Phys. Status Solidi A 108(11), 11\u201365 (1988)",
      "journal-title": "Phys. Status Solidi A"
    },
    {
      "key": "6269_CR18",
      "first-page": "775",
      "volume-title": "Proc. International Electron Devices Meeting",
      "author": "U. Russo",
      "year": "2007",
      "unstructured": "U. Russo, D. Ielmini, C. Cagli, A.L. Lacaita, S. Spigat, C. Wiemert, M. Peregot, M. Fanciulli, Conductive-filament switching analysis and self-accelerated thermal dissolution model for reset in NiO-based RRAM, in Proc. International Electron Devices Meeting, Baltimore MD, December 2007, pp. 775\u2013778, art. 4419062 (2007)"
    },
    {
      "issue": "2",
      "key": "6269_CR19",
      "doi-asserted-by": "crossref",
      "first-page": "506",
      "DOI": "10.1109/TED.2007.911630",
      "volume": "55",
      "author": "U. Russo",
      "year": "2008",
      "unstructured": "U. Russo, D. Ielmini, A. Redaelli, A.L. Lacaita, Modeling of programming and read performance in phase-change memories\u2014part I: cell optimization and scaling. IEEE Trans. Electron Devices 55(2), 506\u2013514 (2008)",
      "journal-title": "IEEE Trans. Electron Devices"
    },
    {
      "key": "6269_CR20",
      "volume": "18",
      "author": "G.S. Snider",
      "year": "2007",
      "unstructured": "G.S. Snider, R.S. Williams, Nano/CMOS architectures using a field-programmable nanowire interconnect. Nanotechnology 18, 035204 (2007)",
      "journal-title": "Nanotechnology"
    },
    {
      "key": "6269_CR21",
      "doi-asserted-by": "crossref",
      "first-page": "151",
      "DOI": "10.1166/jnn.2007.18012",
      "volume": "7",
      "author": "D.B. Strukov",
      "year": "2007",
      "unstructured": "D.B. Strukov, K.K. Likharev, Defect-tolerant architectures for nanoelectronic crossbar memories. J. Nanosci. Nanotechnol. 7, 151\u2013167 (2007)",
      "journal-title": "J. Nanosci. Nanotechnol."
    },
    {
      "key": "6269_CR22",
      "doi-asserted-by": "crossref",
      "first-page": "696",
      "DOI": "10.1109/TNANO.2007.907841",
      "volume": "6",
      "author": "D.B. Strukov",
      "year": "2007",
      "unstructured": "D.B. Strukov, K.K. Likharev, Reconfigurable hybrid CMOS/nanodevice circuits for image processing. IEEE Trans. Nanotechnol. 6, 696\u2013710 (2007)",
      "journal-title": "IEEE Trans. Nanotechnol."
    },
    {
      "key": "6269_CR23",
      "doi-asserted-by": "crossref",
      "first-page": "80",
      "DOI": "10.1038/nature06932",
      "volume": "453",
      "author": "D.B. Strukov",
      "year": "2008",
      "unstructured": "D.B. Strukov, G.S. Snider, D.R. Stewart, R.S. Williams, The missing memristor found. Nature 453, 80\u201383 (2008)",
      "journal-title": "Nature"
    },
    {
      "issue": "9",
      "key": "6269_CR24",
      "doi-asserted-by": "crossref",
      "first-page": "1058",
      "DOI": "10.1002/smll.200801323",
      "volume": "5",
      "author": "D.B. Strukov",
      "year": "2009",
      "unstructured": "D.B. Strukov, J.L. Borghetti, R.S. Williams, Coupled ionic and electronic transport model of thin-film semiconductor memristive behavior. Small 5(9), 1058\u20131063 (2009)",
      "journal-title": "Small"
    },
    {
      "issue": "3",
      "key": "6269_CR25",
      "doi-asserted-by": "crossref",
      "first-page": "515",
      "DOI": "10.1007/s00339-008-4975-3",
      "volume": "94",
      "author": "D.B. Strukov",
      "year": "2009",
      "unstructured": "D.B. Strukov, R.S. Williams, Exponential ionic drift: fast switching and low volatility of thin film memristors. Appl. Phys. A 94(3), 515\u2013519 (2009)",
      "journal-title": "Appl. Phys. A"
    },
    {
      "key": "6269_CR26",
      "doi-asserted-by": "crossref",
      "first-page": "833",
      "DOI": "10.1038/nmat2023",
      "volume": "6",
      "author": "R. Waser",
      "year": "2007",
      "unstructured": "R. Waser, M. Aono, Nanoionics-based resistive switching memories. Nat. Mater. 6, 833\u2013840 (2007)",
      "journal-title": "Nat. Mater."
    },
    {
      "key": "6269_CR27",
      "doi-asserted-by": "crossref",
      "first-page": "824",
      "DOI": "10.1038/nmat2009",
      "volume": "6",
      "author": "M. Wuttig",
      "year": "2007",
      "unstructured": "M. Wuttig, N. Yamada, Phase-change materials for rewriteable data storage. Nat. Mater. 6, 824\u2013832 (2007)",
      "journal-title": "Nat. Mater."
    },
    {
      "issue": "12",
      "key": "6269_CR28",
      "doi-asserted-by": "crossref",
      "first-page": "2185",
      "DOI": "10.1109/JPROC.2010.2064271",
      "volume": "98",
      "author": "V.V. Zhirnov",
      "year": "2010",
      "unstructured": "V.V. Zhirnov, R.K. Cavin, S. Menzel, E. Linn, S. Schmelzer, D. Brauhaus, C. Schindler, R. Waser, Memory devices: energy-space-time tradeoffs. Proc. IEEE 98(12), 2185\u20132200 (2010)",
      "journal-title": "Proc. IEEE"
    }
  ],
  "container-title": "Applied Physics A",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "http://www.springerlink.com/index/pdf/10.1007/s00339-011-6269-4",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2020,
        6,
        16
      ]
    ],
    "date-time": "2020-06-16T00:52:25Z",
    "timestamp": 1592268745000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "http://link.springer.com/10.1007/s00339-011-6269-4"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2011,
        1,
        26
      ]
    ]
  },
  "references-count": 28,
  "journal-issue": {
    "issue": "4",
    "published-print": {
      "date-parts": [
        [
          2011,
          3
        ]
      ]
    }
  },
  "alternative-id": [
    "6269"
  ],
  "URL": "http://dx.doi.org/10.1007/s00339-011-6269-4",
  "relation": {},
  "ISSN": [
    "0947-8396",
    "1432-0630"
  ],
  "subject": [],
  "container-title-short": "Appl. Phys. A",
  "published": {
    "date-parts": [
      [
        2011,
        1,
        26
      ]
    ]
  }
}