DOI: 10.1007/s00339-004-3021-3. Characteristics of SrBi2Ta2O9 ferroelectric films on Si using LaAlO3 thin film as an insulator

Characteristics of SrBi2Ta2O9 ferroelectric films on Si using LaAlO3 thin film as an insulator

10.1007/s00339-004-3021-3

Crossref journal-article

Springer Science and Business Media LLC

Applied Physics A (297)

Bibliography

Li, A.-D., Wang, Y.-J., Shao, Q.-Y., Cheng, J.-B., Wu, D., Ling, H.-Q., Bao, Y.-J., Wang, M., Liu, Z.-G., & Ming, N.-B. (2005). Characteristics of SrBi2Ta2O9 ferroelectric films on Si using LaAlO3 thin film as an insulator. Applied Physics A, 81(6), 1273â1276.

Authors 10

A.-D. Li (first)
Y.-J. Wang (additional)
Q.-Y. Shao (additional)
J.-B. Cheng (additional)
D. Wu (additional)
H.-Q. Ling (additional)
Y.-J. Bao (additional)
M. Wang (additional)
Z.-G. Liu (additional)
N.-B. Ming (additional)

References 17 Referenced 2

Y. Shichi, S. Tanimoto, T. Goto, K. Kuroiwa, Y. Tarui: Jpn. J. Appl. Phys. 33, 5172 (1994) (10.1143/JJAP.33.5172) / Jpn. J. Appl. Phys. by Shichi (1994)
M. Noda, Y. Matsumuro, H. Sugiyama, M. Okuyama: Jpn. J. Appl. Phys. 38, 2275 (1999) (10.1143/JJAP.38.2275) / Jpn. J. Appl. Phys. by Noda (1999)
Y.T. Kim, D.S. Shin: Appl. Phys. Lett. 71, 433 (1997) / Appl. Phys. Lett. by Kim (1997)
J.P. Han, X. Guo, T.-P. Ma: Integr. Ferroelectr. 22, 213 (1998) (10.1080/10584589808208043) / Integr. Ferroelectr. by Han (1998)
B.E. Park, S. Shouriki, E. Tokumitsu, A.H. Ishiwara: Jpn. J. Appl. Phys. Part 1 37, 5145 (1998) (10.1143/JJAP.37.5145) / Jpn. J. Appl. Phys. Part by Park (1998)
T. Mihara, H. Watanabe, C.A. Paz de Araujo: Jpn. J. Appl. Phys. 33, 3996 (1994) (10.1143/JJAP.33.3996) / Jpn. J. Appl. Phys. by Mihara (1994)
A.I. Kingon, J.P. Maria, S.K. Streiffer: Nature 46, 1032 (2000) (10.1038/35023243) / Nature by Kingon (2000)
Y. Lu, J. Zheng, M.C. Golomb, F. Wang, H. Jiang, J. Zhao: Appl. Phys. Lett. 74, 3764 (1999) (10.1063/1.124172) / Appl. Phys. Lett. by Lu (1999)
A.D. Li, Q.Y. Shao, H.Q. Ling, J.B. Cheng, D. Wu, Z.G. Liu, N.B. Ming, C. Wang, H.W. Zhou, B.Y. Nguyen: Appl. Phys. Lett. 83, 3540 (2003) (10.1063/1.1622794) / Appl. Phys. Lett. by Li (2003)
B.E. Park, H. Ishiwara: Appl. Phys. Lett. 78, 806 (2001) (10.1063/1.1380246) / Appl. Phys. Lett. by Park (2001)
Y.P. Wang, L. Zou, X.B. Lu, Z.G. Liu: Appl. Surf. Sci. 205, 176 (2003) (10.1016/S0169-4332(02)01057-7) / Appl. Surf. Sci. by Wang (2003)
C. Isobe, T. Ami, K. Hironaka, K. Watanabe, M. Sugiyama, N. Nagel, K. Katori, Y. Ikeda, M. Tanaka, H. Yamoto, H. Yagi: Integr. Ferroelectr. 14, 95 (1997) (10.1080/10584589708019981) / Integr. Ferroelectr. by Isobe (1997)
A.D. Li, D. Wu, H.Q. Ling, T. Yu, M. Wang, X.B. Yin, Z.G. Liu, N.B. Ming: J. Appl. Phys. 88, 1035 (2000) (10.1063/1.373773) / J. Appl. Phys. by Li (2000)
W.P. Li, Y.M. Liu, R. Zhang, J. Chen, P. Cheng, X.L. Yuan, Y.G. Zhou, B. Shen, R.L. Jiang, Z.G. Liu, Y.D. Zheng: Appl. Phys. A 72, 85 (2001) (10.1007/s003390000568) / Appl. Phys. A by Li (2001)
X.B. Lu, Z.G. Liu, Y.P. Wang, Y. Yang, X.P. Wang, H.W. Zhou, B.Y. Nguyen: J. Appl. Phys. 94, 1229 (2003) (10.1063/1.1586976) / J. Appl. Phys. by Lu (2003)
J.P. Han, T.P. Ma: Appl. Phys. Lett. 72, 1185 (1998) (10.1063/1.121008) / Appl. Phys. Lett. by Han (1998)
E.H. Nicollian, A. Geotzberger: IEEE Trans. Electron Devices 21, 122 (1998) / IEEE Trans. Electron Devices by Nicollian (1998)

Dates

Type	When
Created	20 years, 11 months ago (Sept. 29, 2004, 5:30 a.m.)
Deposited	6 years, 3 months ago (May 28, 2019, 8:36 a.m.)
Indexed	2 years, 1 month ago (Aug. 2, 2023, 10:15 p.m.)
Issued	19 years, 10 months ago (Nov. 1, 2005)
Published	19 years, 10 months ago (Nov. 1, 2005)
Published Online	19 years, 10 months ago (Nov. 1, 2005)
Published Print	19 years, 10 months ago (Nov. 1, 2005)

Funders 0

None

BibTeX

@article{Li_2005, title={Characteristics of SrBi2Ta2O9 ferroelectric films on Si using LaAlO3 thin film as an insulator}, volume={81}, ISSN={1432-0630}, url={http://dx.doi.org/10.1007/s00339-004-3021-3}, DOI={10.1007/s00339-004-3021-3}, number={6}, journal={Applied Physics A}, publisher={Springer Science and Business Media LLC}, author={Li, A.-D. and Wang, Y.-J. and Shao, Q.-Y. and Cheng, J.-B. and Wu, D. and Ling, H.-Q. and Bao, Y.-J. and Wang, M. and Liu, Z.-G. and Ming, N.-B.}, year={2005}, month=nov, pages={1273–1276} }

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