DOI: 10.1007/s00339-004-2865-x. MOCVD growth and properties of ZnO films using dimethylzinc and oxygen

MOCVD growth and properties of ZnO films using dimethylzinc and oxygen

10.1007/s00339-004-2865-x

Crossref journal-article

Springer Science and Business Media LLC

Applied Physics A (297)

Bibliography

Ye, J. D., Gu, S. L., Qin, F., Zhu, S. M., Liu, S. M., Zhou, X., Liu, W., Hu, L. Q., Zhang, R., Shi, Y., Zheng, Y. D., & Ye, Y. D. (2005). MOCVD growth and properties of ZnO films using dimethylzinc and oxygen. Applied Physics A, 81(4), 809â812.

Authors 12

J.D. Ye (first)
S.L. Gu (additional)
F. Qin (additional)
S.M. Zhu (additional)
S.M. Liu (additional)
X. Zhou (additional)
W. Liu (additional)
L.Q. Hu (additional)
R. Zhang (additional)
Y. Shi (additional)
Y.D. Zheng (additional)
Y.D. Ye (additional)

References 21 Referenced 53

T. Aoki, Y. Hatanaka: Appl. Phys. Lett. 76(22), 3257 (2000) (10.1063/1.126599) / Appl. Phys. Lett. by Aoki (22)
C.R. Miskys, M.K. Kelly, O. Ambacher, C.G. Martinez, M. Stutzmann: Appl. Phys. Lett. 77(12), 1858 (2000) (10.1063/1.1311596) / Appl. Phys. Lett. by Miskys (12)
K. Ogata, S.W. Kim, S. Fujita, S. Fujita: J. Crystal Growth 240, 112 (2002) (10.1016/S0022-0248(02)00911-9) / J. Crystal Growth by Ogata (2002)
T. Gruber, C. Kirchner, K. Thonke, R. Sauer, A. Waag: Phys. Status Solid A 192(1), 166 (2002) (10.1002/1521-396X(200207)192:1<166::AID-PSSA166>3.0.CO;2-G) / Phys. Status Solid A by Gruber (1)
J.D. Ye, S.L. Gu, S.M. Zhu, T. Chen, L.Q. Hu, F. Qin, R. Zhang, Y. Shi, Y.D. Zheng: J. Crystal Growth 243, 151 (2002) (10.1016/S0022-0248(02)01474-4) / J. Crystal Growth by Ye (2002)
N. Oleynik, M. Adam, A. Krtschil, J. Blasing, A. Dadgar, F. Bertram, D. Forster, A. Diez, A. Greiling, M. Seip, J. Christen, A. Krost: J. Crystal Growth 248, 14 (2003) (10.1016/S0022-0248(02)01879-1) / J. Crystal Growth by Oleynik (2003)
A. Ashrafi, I. Suemune, H. Kumano: Jpn. J. Appl. Phys. 41, 2851 (2002) (10.1143/JJAP.41.2851) / Jpn. J. Appl. Phys. by Ashrafi (2002)
Frank T.J. Smith: Appl. Phys. Lett. 43(12), 1108 (1993) (10.1063/1.94243) / Appl. Phys. Lett. by Smith (12)
V. Gupta, A. Mansingh: J. Appl. Phys. 80(2), 1063 (1996) (10.1063/1.362842) / J. Appl. Phys. by Gupta (2)
B.J. Coppa, R.F. Davis, R.J. Nemanich: Appl. Phys. Lett. 82(3), 400 (2003) (10.1063/1.1536264) / Appl. Phys. Lett. by Coppa (3)
M. Chen, X. Wang, Y.H. Yu, Z.L. Pei, X.D. Bai, C. Sun, R.F. Huang, L.S. Wen: Appl. Surf. Sci. 158, 134 (2000) (10.1016/S0169-4332(99)00601-7) / Appl. Surf. Sci. by Chen (2000)
Y. Fujita: J. Crystal Growth 221, 382 (2000) (10.1016/S0022-0248(00)00718-1) / J. Crystal Growth by Fujita (2000)
W.S. Shi, O. Agyeman, C.N. Xu: J. Appl. Phys. 91(9), 5640 (2002) (10.1063/1.1466527) / J. Appl. Phys. by Shi (9)
Y. Sun, J.B. Ketterson, G.K.L. Wong: Appl. Phys. Lett. 77, 2322 (2000) (10.1063/1.1316069) / Appl. Phys. Lett. by Sun (2000)
F. Oba, S.R. Nishitani, S. Isotani, H. Adachi, I. Tanaka: J. Appl. Phys. 90(2), 824 (2001) (10.1063/1.1380994) / J. Appl. Phys. by Oba (2)
S.B. Zhang, S.H. Wei, A. Zunger: Phys. Rev. B 63(7) 075205 (2001) (10.1103/PhysRevB.63.075205)
Z.B. Fang, H. X Gong, X.Q. Liu, D.Y. Xu, C.M. Huang, Y.Y. Wang: Acta Phys. Sin. 52(7), 1748 (2003) (10.7498/aps.52.1748) / Acta Phys. Sin. by Fang (7)
B. Lin, Z. Fu, Y. Jia: Appl. Phys. Lett. 79(7), 943 (2001) (10.1063/1.1394173) / Appl. Phys. Lett. by Lin (7)
F.H. Leiter, H.R. Alves, A. Hofstaetter, D.M. Hofmann, B.K. Meyer: Phys. Status Solid B 226, R4 (2001) (10.1002/1521-3951(200107)226:1<R4::AID-PSSB99994>3.0.CO;2-F)
K. Vanheusden, W.L. Warren, C.H. Seager, D.R. Tallant, J.A. Voigt, B.E. Gnade: J. Appl. Phys. 79, 7983 (1996) (10.1063/1.362349) / J. Appl. Phys. by Vanheusden (1996)
O. Agyeman, C.N. Xu, W.S. Shi, X.G. Sheng, M. Suzuki: Jpn. J. Appl. Phys. 41, 666 (2002) (10.1143/JJAP.41.666) / Jpn. J. Appl. Phys. by Agyeman (2002)

Dates

Type	When
Created	21 years, 3 months ago (June 2, 2004, 6:37 a.m.)
Deposited	2 years, 4 months ago (April 28, 2023, 3:43 p.m.)
Indexed	1 week, 3 days ago (Aug. 26, 2025, 3:15 a.m.)
Issued	20 years ago (Sept. 1, 2005)
Published	20 years ago (Sept. 1, 2005)
Published Online	20 years ago (Sept. 1, 2005)
Published Print	20 years ago (Sept. 1, 2005)

Funders 0

None

BibTeX

@article{Ye_2005, title={MOCVD growth and properties of ZnO films using dimethylzinc and oxygen}, volume={81}, ISSN={1432-0630}, url={http://dx.doi.org/10.1007/s00339-004-2865-x}, DOI={10.1007/s00339-004-2865-x}, number={4}, journal={Applied Physics A}, publisher={Springer Science and Business Media LLC}, author={Ye, J.D. and Gu, S.L. and Qin, F. and Zhu, S.M. and Liu, S.M. and Zhou, X. and Liu, W. and Hu, L.Q. and Zhang, R. and Shi, Y. and Zheng, Y.D. and Ye, Y.D.}, year={2005}, month=sep, pages={809–812} }

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