DOI: 10.1007/s00170-006-0650-z. Annealing treatment of amorphous silicon generated by single point diamond turning

Annealing treatment of amorphous silicon generated by single point diamond turning

10.1007/s00170-006-0650-z

Crossref journal-article

Springer Science and Business Media LLC

The International Journal of Advanced Manufacturing Technology (297)

Bibliography

Jasinevicius, R. G., & Pizani, P. S. (2006). Annealing treatment of amorphous silicon generated by single point diamond turning. The International Journal of Advanced Manufacturing Technology, 34(7â8), 680â688.

Authors 2

Renato G. Jasinevicius (first)
Paulo S. Pizani (additional)

References 19 Referenced 16

Yan J, Yoshino M, Kuriagawa T, Shirakashi T, Syoji K, Komanduri R (2001) On the ductile machining of silicon for micro electro-mechanical systems (MEMS), opto-electronic and optical application. Mat Sci Eng A 297:230–234 (10.1016/S0921-5093(00)01031-5) / Mat Sci Eng A by J Yan (2001)
Yan J (2004) Laser micro-Raman spectroscopy of single-point diamond machined silicon substrates. J Appl Phys 95:2094–2101 (10.1063/1.1639953) / J Appl Phys by J Yan (2004)
Morris JC, Callaham DL, Kulik J, Patten JA, Scattergood RO (1995) Origins of the ductile regime in single point diamond turning of semiconductors. J Am Ceram Soc 78:2015–2020 (10.1111/j.1151-2916.1995.tb08612.x) / J Am Ceram Soc by JC Morris (1995)
Jasinevicius RG, Pizani PS, Duduch JG (2000) Brittle to ductile transition dependence upon the transition pressure value of semiconductors in micromachining. J Mat Res 15:1688–1692 (10.1557/JMR.2000.0243) / J Mat Res by RG Jasinevicius (2000)
Jasinevicius RG, Santos FJ, Pizani PS, Duduch JG, Porto AJV (2000) Surface amorphization in diamond turning of silicon crystal investigated by transmission electron microscopy. J Non-Crystal Sol 272:174–178 (10.1016/S0022-3093(00)00236-2) / J Non–Crystal Sol by RG Jasinevicius (2000)
Pizani PS, Jasinevicius RG, Duduch JG, Porto AJV (1999) Ductile and brittle damage in single point diamond turned silicon probed by Raman scattering. J Mat Sci Lett 18:1185–1187 (10.1023/A:1006694310171) / J Mat Sci Lett by PS Pizani (1999)
Amer MS, Dosser L, Le Clair S, Maguire JF (2002) Induced stresses and structural changes in silicon wafers as a result of laser micro-machining. Appl Surf Sci 187:291–296 (10.1016/S0169-4332(01)01043-1) / Appl Surf Sci by MS Amer (2002)
Amer MS, El-Ashry MA, Dosseb LR, Hix KE, Maguire JF, Irwin B (2005) Femtosecond versus nanosecond laser machining: comparison of induced stresses and structural changes in silicon wafers. Appl Surf Sci 242(1–2):162–167 (10.1016/j.apsusc.2004.08.029) / Appl Surf Sci by MS Amer (2005)
Wortman JJ, Evans RA (1965) Young's modulus, shear modulus, and Poisson's ratio in silicon and germanium. J Appl Phys 36(1):153–156 (10.1063/1.1713863) / J Appl Phys by JJ Wortman (1965)
Blake PN, Scattergood RO (1990) Ductile-regime machining of Ge and Si. J Am Ceram Soc 73(4):949–957 (10.1111/j.1151-2916.1990.tb05142.x) / J Am Ceram Soc by PN Blake (1990)
Blackley WS, Scattergood RO (1991) Ductile-regime machining model for diamond turning of brittle materials. Precision Eng 13(2):95–103 (10.1016/0141-6359(91)90500-I) / Precision Eng by WS Blackley (1991)
Fang FZ, Zhang GX (2003) An experimental study of the edge radius effect on cutting single crystal silicon. Int J Adv Manuf Technol 22:703–707 (10.1007/s00170-003-1593-2) / Int J Adv Manuf Technol by FZ Fang (2003)
Shibata T, Ono A, Kurihara K, Makino E, Ikeda M (1994) Cross-section transmission electron microscope observations of diamond turned single crystal Si surfaces. Appl Phys Lett 65:2553–2555 (10.1063/1.112633) / Appl Phys Lett by T Shibata (1994)
Jeynes C, Puttick KE, Whitmore LC, Gärtner K, Gee AE, Millen DK, Webb RP, Peel RMA, Sealy BJ (1996) Laterally resolved crystalline damage in single point diamond turned silicon. Nucl Instrum Methods Phys Res B Beam Interact Mater Atoms 118(1–4):431–436 (10.1016/0168-583X(95)01464-0) / Nucl Instrum Methods Phys Res B Beam Interact Mater Atoms by C Jeynes (1996)
Inamura T, Shimada S, Takezawa N, Nakahara N (1997) Brittle/ductile transition phenomena observed in computer simulation of machining defect free monocrystalline silicon. CIRP Ann 46:31–34 (10.1016/S0007-8506(07)60769-0) / CIRP Ann by T Inamura (1997)
Weinstein BA, Piermarini GJ (1975) Raman scattering and phonon dispersion in Si and GaP at very high pressure. Phys Rev B 12(4):1171–1186 (10.1103/PhysRevB.12.1172) / Phys Rev B by BA Weinstein (1975)
Gogotsi YG, Baek C, Kirscht F (1999) Raman microspectroscopy study of processing-induced phase transformations and residual stress in silicon. Semicond Sci Technol 14:936–944 (10.1088/0268-1242/14/10/310) / Semicond Sci Technol by YG Gogotsi (1999)
Gogotsi YG, Zhou G, Ku SS, Cetinkunt S (2001) Raman microspectroscopy analysis of pressure-induced metallization in scratching of silicon. Semicond Sci Technol 16:345–352 (10.1088/0268-1242/16/5/311) / Semicond Sci Technol by YG Gogotsi (2001)
Dominich V, Gogotsi Y (2001) High-pressure surface science. In: Nalwa HS (ed) Advances in surface science, vol 38. Academic, New York, pp 355–445 (10.1016/S1079-4042(01)80052-7) / Advances in surface science, vol 38 by V Dominich (2001)

Dates

Type	When
Created	19 years, 2 months ago (June 14, 2006, 6:50 a.m.)
Deposited	6 years, 3 months ago (May 23, 2019, 1:56 p.m.)
Indexed	11 months, 1 week ago (Sept. 13, 2024, 3:18 a.m.)
Issued	19 years, 2 months ago (June 15, 2006)
Published	19 years, 2 months ago (June 15, 2006)
Published Online	19 years, 2 months ago (June 15, 2006)
Published Print	17 years, 11 months ago (Sept. 12, 2007)

Funders 0

None

BibTeX

@article{Jasinevicius_2006, title={Annealing treatment of amorphous silicon generated by single point diamond turning}, volume={34}, ISSN={1433-3015}, url={http://dx.doi.org/10.1007/s00170-006-0650-z}, DOI={10.1007/s00170-006-0650-z}, number={7–8}, journal={The International Journal of Advanced Manufacturing Technology}, publisher={Springer Science and Business Media LLC}, author={Jasinevicius, Renato G. and Pizani, Paulo S.}, year={2006}, month=jun, pages={680–688} }

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