Crossref
book-chapter
Springer Berlin Heidelberg
Advances in Solid State Physics (297)
References
124
Referenced
60
-
J.A. Powell, Mat. Res. Soc. Symp. Proc. 97, 159 (1987)
(
10.1557/PROC-97-159
) / Mat. Res. Soc. Symp. Proc. by J.A. Powell (1987) -
R.F. Davis, Z. Sitar, B.E. Williams, H.S. Kong, H.J. Kim, J.W. Palmour, J.A. Edmond, J. Ryu, J.T. Glass, and C.H. Carter, Jr., Materials Science and Engineering B 1, 77 (1988)
(
10.1016/0921-5107(88)90032-3
) / Materials Science and Engineering B by R.F. Davis (1988) - H. Matsunami, Optoelectronics-Devices and Technologies 2, 29 (1987). / Optoelectronics-Devices and Technologies by H. Matsunami (1987)
-
R. C. Marshall, in: Silicon Carbide-1968, Proc. of the 2. Int. Conf. on Silicon Carbide, (University Park, PA 1968), ed. by H.K. Henisch and R. Roy, p. 73
(
10.1016/B978-0-08-006768-1.50012-7
) - W.F. Knippenberg, Philips Res. Repts. 18, 161 (1963) / Philips Res. Repts. by W.F. Knippenberg (1963)
- H.J. van Daal, Philips Res. Repts. Suppl. No. 3 (1965)
- W.J. Choyke and Lyle Patrick, in: Silicon Carbide-1979, Proc. of the 3. Int. Conf. on Silicon Carbide, (University of South Carolina Press, Columbia, South Carolina 1973), ed. by R.C. Marshall, J.W. Faust Jr., and C.E. Ryan, p. 261. / Silicon Carbide-1979, Proc. of the 3. Int. Conf. on Silicon Carbide by W.J. Choyke (1973)
-
Y.M. Tairov and Y.A. Vodakov, in: Electroluminescence ed. by J.I. Pankove, (Springer Verlag 1977), p. 31
(
10.1007/3540081275_2
) -
W. J. Choyke, Mat. Res. Soc. Symp. Proc. 97, 207 (1987).
(
10.1557/PROC-97-207
) / Mat. Res. Soc. Symp. Proc. by W. J. Choyke (1987) - W. J. Choyke, in: NATO ASI Series “The Physics and Chemistry of Carbides, Nitrides and Borides”, (Manchester 1989), ed. by R. Freer
- R.F. Davis, R.J. Trew, J.A. Edmond, and J.W. Palmour, to be published
- N.W. Jepps and T.F. Page, in: Progress in Crystal Growth and Characterization, Crystal Growth and Characterization of Polytype Structures, Vol. 7, (Pergamon, New York 1983), ed. by P. Krisna, p. 259. / Progress in Crystal Growth and Characterization, Crystal Growth and Characterization of Polytype Structures by N.W. Jepps (1983)
-
C. Cheng, R.J. Needs, and V. Heine, J. Phys. C: Solid State Phys. 21, 1049 (1987)
(
10.1088/0022-3719/21/6/012
) / J. Phys. C: Solid State Phys. by C. Cheng (1987) -
N. Churcher, K. Kunc, and V. Heine, J. Phys. C: Solid State Phys. 19, 4413 (1986)
(
10.1088/0022-3719/19/23/006
) / J. Phys. C: Solid State Phys. by N. Churcher (1986) -
P.E. Van Camp, V.E. Van Doren, and J. T. Devreese, phys. stat. sol. (b) 146, 573 (1988)
(
10.1002/pssb.2221460218
) / phys. stat. sol. (b) by P.E. Camp Van (1988) -
W. G. Spitzer, D. Kleinman, and D. Walsh, Phys. Rev. 113, 127 (1959)
(
10.1103/PhysRev.113.127
) / Phys. Rev. by W. G. Spitzer (1959) -
W. G. Spitzer, D.A. Kleinman, and C.J. Frosch, Phys. Rev. 113, 133 (1959)
(
10.1103/PhysRev.113.133
) / Phys. Rev. by W. G. Spitzer (1959) -
R.T. Holm, P.H. Klein, and P.E.R. Nordquist, Jr., J. Appl. Phys. 60, 1479 (1986)
(
10.1063/1.337275
) / J. Appl. Phys. by R.T. Holm (1986) - R. Helbig, Ch. Haberstroh, and Th. Lauterbach, in: The Electrochemical Society, Extended Abstracts, Vol. 89-2, (Hollywood, Florida 1989), p. 695
- R. Helbig, S. Karmann, and R.A. Stein, in: The Electrochemical Society, Extended Abstracts, Vol. 89-2, (Hollywood, Florida 1989), p. 718
-
W. J. Choyke and L.A. Patrick, Phys. Rev. 105, 1721 (1957)
(
10.1103/PhysRev.105.1721
) / Phys. Rev. by W. J. Choyke (1957) - F. Herman, J.P. Van Dyke, and R.L. Kortum, Mat. Res. Bull. 4, 5167 (1969) / Mat. Res. Bull. by F. Herman (1969)
-
H.-G. Junginger and W. van Haeringen, phys. stat. sol. 37, 709 (1970)
(
10.1002/pssb.19700370222
) / phys. stat. sol. by H.-G. Junginger (1970) - L.A. Hemstreet and C.Y. Fong, in: Silicon Carbide—1973, Proc. of the 3. Int. Conf. on Silicon Carbide, (Miami Beach, Florida 1978), ed. by R.C. Marshall, J.W. Faust, Jr., and C.E. Raan, p. 284.
-
Y. Li and P.J. Lin-Chung, Phys. Rev. B 36, 1130 (1987)
(
10.1103/PhysRevB.36.1130
) / Phys. Rev. B by Y. Li (1987) - P.J. Dean, W.J. Choyke, and L. Patrick, J. Luminesc. 15, 229 (1977) / J. Luminesc. by P.J. Dean (1977)
-
R. Kaplan, R.J. Wagner, H.J. Kim, and R.F. Davis, Solid State Commun. 55, 67 (1985)
(
10.1016/0038-1098(85)91107-X
) / Solid State Commun. by R. Kaplan (1985) -
R.G. Humphreys, D. Bimberg, and W. J. Choyke, Solid State Commun. 39, 163 (1981)
(
10.1016/0038-1098(81)91070-X
) / Solid State Commun. by R.G. Humphreys (1981) - W.J. Choyke and L. Patrick, in: Silicon Carbide—1959, (Boston, Pergamon Press 1960), ed. by J.P. O'Connor and J. Smiltens, p. 306 / Silicon Carbide—1959 by W.J. Choyke (1960)
- G. Pensl, W. Suttrop, H. Zhang R. Helbig, P. Glasow, P. Lanig, and G. Ziegler, in: Advances in Physics of Materials, (Today & Tomorrow's Printers & Publishers, New Dehli 110005, 1989), ed. by Z. H. Zaidi and M. Husain, p. 159. / Advances in Physics of Materials by G. Pensl (1989)
-
C. Wang, J. Bernholc, and R.F. Davis, Phys. Rev. B 38, 12752 (1988)
(
10.1103/PhysRevB.38.12752
) / Phys. Rev. B by C. Wang (1988) - C. Wang, J. Bernholc, and R.F. Davis, Mat. Res. Soc. Symp. Proc. (1990), in press
- K. Winnacker and E. Weingärtner, in: Anorganische Technologie II, (Hammer Verlag, München 1950), p. 284 / Anorganische Technologie II by K. Winnacker (1950)
- J.A. Lely, Ber. Dt. Keram. Ges. 32, 229 (1955) / Ber. Dt. Keram. Ges. by J.A. Lely (1955)
- N.Y. Shushlebina, Y.M. Shashkov, E.K. Bogonosova, and E.E. Golobokina, Inorganic Mat. 13, 682 (1977) / Inorganic Mat. by N.Y. Shushlebina (1977)
-
Y.M. Tairov and V.F. Tsvetkov, J. Cryst. Growth 43, 209 (1978)
(
10.1016/0022-0248(78)90169-0
) / J. Cryst. Growth by Y.M. Tairov (1978) -
Y.M. Tairov and V.F. Tsvetkov, J. Cryst. Growth 52, 146 (1981)
(
10.1016/0022-0248(81)90184-6
) / J. Cryst. Growth by Y.M. Tairov (1981) -
G. Ziegler, P. Lanig, D. Theis, and C. Weyrich, IEEE Trans. Electron Dev. ED 30, 277 (1983)
(
10.1109/T-ED.1983.21117
) / IEEE Trans. Electron Dev. ED by G. Ziegler (1983) - K. Koga, T. Nakata, and T. Niina, in: Extended Abstracts of the 17th Conf. on Solid State Devices and Materials, (Tokyo 1985), p. 249
- K. Koga, T. Nakata, Y. Ueda, Y. Matsushita, Y. Fujikawa, T. Uetani, and T. Niina, in: The Electrochemical Society, Extended Abstracts Vol. 89-2, (Hollywood, Florida 1989), p. 689
-
R.I. Scace and G.A. Slack, J. Chem. Phys. 30, 1551 (1959)
(
10.1063/1.1730236
) / J. Chem. Phys. by R.I. Scace (1959) -
R.W. Brander and R.P. Sutton, J. Phys. D 2, 309 (1969)
(
10.1088/0022-3727/2/3/301
) / J. Phys. D by R.W. Brander (1969) -
W.v. Münch and W. Kürzinger, Solid State Electron 21, 1129 (1978)
(
10.1016/0038-1101(78)90348-9
) / Solid State Electron by W. Münch (1978) - E. Pettenpaul, W.v. Münch, and G. Ziegler, Inst. Phys. Conf. Ser. 53, 21 (1980) / Inst. Phys. Conf. Ser. by E. Pettenpaul (1980)
-
A. Suzuki, M. Ikeda, H. Matsunami, and T. Tanaka, J. Electrochem. Soc. 122, 1741 (1975)
(
10.1149/1.2134123
) / J. Electrochem. Soc. by A. Suzuki (1975) -
A. Suzuki, M. Ikeda, N. Nagao, H. Matsunami, and T. Tanaka, J. Appl. Phys. 47, 4546 (1976)
(
10.1063/1.322428
) / J. Appl. Phys. by A. Suzuki (1976) -
M. Ikeda, T. Haykawa, S. Yamagiwa, H. Matsunami, and T. Tanaka, J. Appl. Phys. 50, 8215 (1979)
(
10.1063/1.325920
) / J. Appl. Phys. by M. Ikeda (1979) - V.A. Dmitriev, P.A. Ivanov, I.V. Korkin, Ya. V. Morozenko, I.V. Popov, T.A. Sidorova, A.M. Strel'chuk, and V.E. Chelnokov, Sov. Tech. Phys. Lett. 11, 98 (1985) / Sov. Tech. Phys. Lett. by V.A. Dmitriev (1985)
-
S. Minagawa and H.C. Gatos, Jpn. J. Appl. Phys. 10, 1680 (1971)
(
10.1143/JJAP.10.1680
) / Jpn. J. Appl. Phys. by S. Minagawa (1971) -
H. Matsunami, S. Nishino, and T. Tanaka, J. Cryst. Growth 45, 138 (1978)
(
10.1016/0022-0248(78)90425-6
) / J. Cryst. Growth by H. Matsunami (1978) -
S. Nishino, J.A. Powell, and H.A. Will, Appl. Phys. Lett. 42, 460 (1983)
(
10.1063/1.93970
) / Appl. Phys. Lett. by S. Nishino (1983) -
S. Nishino, H. Suhara, H. Ono, and H. Matsunami, J. Appl. Phys. 61, 4889 (1987)
(
10.1063/1.338355
) / J. Appl. Phys. by S. Nishino (1987) -
J.A. Powell, L.G. Matus, and M.A. Kuczmarski, J. Electrochem. Soc.: Solid-State Science and Technology 134, 1558 (1987)
(
10.1149/1.2100708
) / J. Electrochem. Soc.: Solid-State Science and Technology by J.A. Powell (1987) -
K. Shibahara, S. Nishino, and H. Matsunami, Appl. Phys. Lett. 50, 1888 (1987)
(
10.1063/1.97676
) / Appl. Phys. Lett. by K. Shibahara (1987) -
J.A. Powell, L.G. Matus, and M.A. Kuczmarski, Appl. Phys. Lett. 51, 823 (1987)
(
10.1063/1.98824
) / Appl. Phys. Lett. by J.A. Powell (1987) -
M. Shigeta, Y. Fujii, A. Ogura, K. Furukawa, A. Suzuki, and S. Nakajima, J. Cryst. Growth 93, 766 (1988)
(
10.1016/0022-0248(88)90617-3
) / J. Cryst. Growth by M. Shigeta (1988) -
M. Shinohara, M. Yamanaka, H. Daimon, E. Sukuma, H. Okumura, S. Misawa K. Endo, and S. Yoshida, Jpn. J. Appl. Phys. 27, L 434 (1988)
(
10.1143/JJAP.27.L434
) / Jpn. J. Appl. Phys. by M. Shinohara (1988) -
H. Matsunami, S. Nishino, M. Odaka, and T. Tanaka, J. Cryst. Growth 31, 72 (1975).
(
10.1016/0022-0248(75)90113-X
) / J. Cryst. Growth by H. Matsunami (1975) -
S. Nishino, H. Matsunami, and T. Tanaka, J. Cryst. Growth 45, 144 (1978)
(
10.1016/0022-0248(78)90426-8
) / J. Cryst. Growth by S. Nishino (1978) -
S. Yoshida, E. Sakuma, H. Okumura, S. Misawa, and K. Endo, J. Appl. Phys. 62, 303 (1987)
(
10.1063/1.339147
) / J. Appl. Phys. by S. Yoshida (1987) -
H.S. Kong, J.T. Glass, and R.F. Davis, Appl. Phys. Lett. 49, 1074 (1986)
(
10.1063/1.97479
) / Appl. Phys. Lett. by H.S. Kong (1986) -
H.S. Kong, J.T. Glass, and R.F. Davis, J. Appl. Phys. 64, 2672 (1988)
(
10.1063/1.341608
) / J. Appl. Phys. by H.S. Kong (1988) - S. Nishino, H. Ishida, and J. Saraie, in: The Electrochemical Society, Extended Abstracts Vol. 89-2, (Hollywood, Flrida 1989), p. 691
- M.M. Anikin, N.B. Guseva, V.A. Dmitiriev, and A.L. Syrkin, Izv. AN SSSR, Inorg. Mat. Ser. 10, 1768 (1984) / Izv. AN SSSR, Inorg. Mat. Ser. by M.M. Anikin (1984)
-
S. Motoyama and S. Kaneda, Appl. Phys. Lett. 54, 242 (1989)
(
10.1063/1.101001
) / Appl. Phys. Lett. by S. Motoyama (1989) - K.L. More, S.P. Withrow, T.E. Haynes, and R.A. Zuhr, Mat. Res. Soc. Symp. Proc., (Boston 1989), in press
- D.W. Feldmann, J.H. Parker, W.J. Choyke, and L. Patrick, Phys. Rev. 170, 658 (1968). / Phys. Rev. by D.W. Feldmann (1968)
-
D.W. Feldmann, J.H. Parker, W.J. Choyke, and L. Patrick, Phys. Rev. 173, 787 (1968)
(
10.1103/PhysRev.173.787
) / Phys. Rev. by D.W. Feldmann (1968) -
H. Okumura, E. Sakuma, J.H. Lee, H. Mukaida, S. Misawa, K. Endo, and S. Yoshida, J. Appl. Phys. 61, 1134 (1987)
(
10.1063/1.338157
) / J. Appl. Phys. by H. Okumura (1987) - The photoluminescence spectra are taken by Ch. Haberstroh, Institut für Angewandte Physik, Erlangen
- T. Vetter, in: The Electrochemical Society, Extended Abstracts Vol. 89-2, (Hollywood, Florida 1989), p. 697
-
H.J. Kim and R.F. Davis, J. Electrochem. Soc.: Solid-State Science and Technology, 133, 2350 (1986).
(
10.1149/1.2108406
) / J. Electrochem. Soc.: Solid-State Science and Technology by H.J. Kim (1986) - R.F. Davis, Advances in Ceramics 23, 447 (1987) / Advances in Ceramics by R.F. Davis (1987)
-
H.J. van Daal, W.F. Knippenberg, and J.D. Wasscher, J. Phys. Chem. Solids 24, 109 (1963)
(
10.1016/0022-3697(63)90046-5
) / J. Phys. Chem. Solids by H.J. Daal van (1963) - M.M. Anikin, A.A. Lebedev, A.L. Syrkin, and A.V. Suvorov, Sov. Phys. Semicond. 19, 69 (1985). / Sov. Phys. Semicond. by M.M. Anikin (1985)
-
P. Zhou, M.G. Spencer, G.L. Harris, and K. Fekade, Appl. Phys. Lett. 50, 1384 (1987)
(
10.1063/1.97864
) / Appl. Phys. Lett. by P. Zhou (1987) -
K. Geim, G. Pensl, and M. Schulz, Appl. Phys. A 27, 71 (1982)
(
10.1007/BF00615808
) / Appl. Phys. by K. Geim (1982) - H. Zhang, G. Pensl, P. Glasow, and S. Leibenzeder, in: The Electrochemical Society, Extended Abstracts, Vol. 89-2, (Hollwood, Florida 1989), p. 714
- H. Zhang, Ph.D. Thesis, University of Erlangen-Nürnberg, Erlangen, FRG, (1990)
- M.V. Alekseenko, A.G. Zabrodskii, and M.P. Timofeev, Sov. Phys. Semicond. 21, 494 (1987) / Sov. Phys. Semicond. by M.V. Alekseenko (1987)
- O.V. Vakulenko and O.A. Guseva, Sov. Phys. Semicond. 15, 886 (1981) / Sov. Phys. Semicond. by O.V. Vakulenko (1981)
- H. Zhang, G. Pensl, A. Dörnen, and S. Leibenzeder, in: The Electrochemical Society, Extended Abstracts Vol. 89-2, (Hollywood, Florida 1989), p. 699
- V.S. Vainer and V.A. Il'in, Sov. Phys. Solid State 23, 2126 (1981) / Sov. Phys. Solid State by V.S. Vainer (1981)
- V.S. Ballandavich and G.N. Violina, Cryst. Latt. Def. and Amorph. Mat. 13, 189 (1987) / Cryst. Latt. Def. and Amorph. Mat. by V.S. Ballandavich (1987)
- W. Suttrop, G. Pensl, and P. Lanig, submitted to Appl. Phys. A
- A.I. Veinger, Yu.A. Wodakov, Yu.I. Kozlov, G.A. Lomakina, E.N. Mokhov, N.G. Oding, and V.I. Sokolov, Sov. Tech. Phys. Lett. 7, 566 (1980) / Sov. Tech. Phys. Lett. by A.I. Veinger (1980)
- N.G. Romanov, V.A. Vetrov, P.G. Baranov, E.N. Mokhov, and V.G. Oding, Sov. Tech. Phys. Lett. 11, 483 (1985) / Sov. Tech. Phys. Lett. by N.G. Romanov (1985)
- The IR spectra in Fig. 10 are taken by Dr.A Dörnen University of Stuttgart; they are published in [79]. H. Zhang, Ph.D. Thesis, University of Erlangen-Nürnberg Erlangen, FRG, (1990)
- J. Schneider, H.D. Müller, K. Maier, W. Wilkening, F. Fuchs, A. Dörnen, S. Leibenzeder, and R. Stein, accepted for publication in Appl. Phys. Lett., in press
-
H.H. Woodbury and G.W. Ludwig, Phys. Rev. 124, 1083 (1961)
(
10.1103/PhysRev.124.1083
) / Phys. Rev. by H.H. Woodbury (1961) - P.G. Baranov, V.A. Vetrov, N.G. Romanov, and V.I. Sokolov, Sov. Phys. Solid State 27, 2085 (1985) / Sov. Phys. Solid State by P.G. Baranov (1985)
- E.N. Kalbukhova, N.N. Kabdin, and S.N. Lukin, Sov. Phys. Solid State 29, 1461 (1987) / Sov. Phys. Solid State by E.N. Kalbukhova (1987)
- A.G. Zubakov, V.G. Stepanov, Yu.A. Vodakov, and E.N. Mokhov, Sov. Tech. Phys. Lett. 8, 120 (1982) / Sov. Tech. Phys. Lett. by A.G. Zubakov (1982)
-
L.S. Dang, K.M. Lee, G.D. Watkins, and W.J. Choyke, Phys. Rev. Lett. 45, 390 (1980)
(
10.1103/PhysRevLett.45.390
) / Phys. Rev. Lett. by L.S. Dang (1980) - V.S. Vainer, V.A. Il'in, V.A. Karachinov, and ßsl Yu.M. Tairov, Sov. Phys. Solid State 28, 201 (1986) / Sov. Phys. Solid State by V.S. Vainer (1986)
- E.O. Johnson, RCA Rev. 26, 163 (1965) / RCA Rev. by E.O. Johnson (1965)
-
R.W. Keyes, Proc. IEEE 60, 225 (1972)
(
10.1109/PROC.1972.8593
) / Proc. IEEE by R.W. Keyes (1972) -
K. Shenai, R.S. Scott, and B.J. Baliga, IEEE Transactions on Electron Devices 36, 1811 (1989)
(
10.1109/16.34247
) / IEEE Transactions on Electron Devices by K. Shenai (1989) -
G. Pensl, R. Helbig, H. Zhang, G. Ziegler, and P. Lanig, Mat. Res. Soc. Symp. Proc. 97, 195 (1987)
(
10.1557/PROC-97-195
) / Mat. Res. Soc. Symp. Proc. by G. Pensl (1987) -
A. Suzuki, H. Ashida, N. Furui, K. Mameno, and H. Matsunami, Jpn. J. Appl. Phys. 21, 579 (1982)
(
10.1143/JJAP.21.579
) / Jpn. J. Appl. Phys. by A. Suzuki (1982) -
C.D. Fung and J.J. Kopanski, Appl. Phys. Lett. 45, 757 (1984)
(
10.1063/1.95394
) / Appl. Phys. Lett. by C.D. Fung (1984) -
L. Mühlhoff, M.J. Bozack, W.J. Choyke, and J.T. Yates, Jr., J. Appl. Phys. 60, 2558 (1986)
(
10.1063/1.337121
) / J. Appl. Phys. by L. Mühlhoff (1986) - Z. Zheng, R.E. Tressler, K.E. Spear, and J.A. Costello, in: The Electrochemical Society, Extended Abstracts Vol. 89-2, (Hollywood, Florida 1989), p. 720
- J.J. Kopanski and D.B. Novotny, in: The Electrochemical Society, Extended Abstracts Vol. 89-2, (Hollywood, Florida 1989), p. 722
-
S. Matsui, S. Mizuki, T. Yamato, H. Aritome, and S. Namba, Jpn. J. Appl. Phys. 20, L38 (1981)
(
10.1143/JJAP.20.L38
) / Jpn. J. Appl. Phys. by S. Matsui (1981) -
S. Dohmae, K. Shibahara, S. Nishino, and H. Matsunami, Jpn. J. Appl. Phys. 24, L873 (1985)
(
10.1143/JJAP.24.L873
) / Jpn. J. Appl. Phys. by S. Dohmae (1985) - I.V. Popov, A.L. Syrkin, and V.E. Chelnokov, Sov. Tech. Phys. Lett. 12, 99 (1986) / Sov. Tech. Phys. Lett. by I.V. Popov (1986)
-
G. Kelner, M.S. Shur, S. Binari, K.J. Sleger, and H.-S. Kong IEEE Transactions on Electron Devices 36, 1045 (1989)
(
10.1109/16.24346
) / IEEE Transactions on Electron Devices by G. Kelner (1989) -
S. Yoshida, K. Sasaki, E. Sakuma, S. Misawa, and ßsl S. Gounda, Appl. Phys. Lett. 46, 766 (1985)
(
10.1063/1.95502
) / Appl. Phys. Lett. by S. Yoshida (1985) - R.G. Verenchikova, Sov. Phys. Semicond. 17, 1123 (1983) / Sov. Phys. Semicond. by R.G. Verenchikova (1983)
-
K. Tasuda, T. Hayakawa, and M. Saji, IEEE Trans. Electron Dev. ED-34, 2002 (1987)
(
10.1109/T-ED.1987.23187
) / IEEE Trans. Electron Dev. ED by K. Tasuda (1987) -
H. Matsunami, M. Ikeda, A. Suzuki, and T. Tanaka, IEEE Trans. Electron Dev. ED-24, 958 (1977)
(
10.1109/T-ED.1977.18859
) / IEEE Trans. Electron Dev. ED by H. Matsunami (1977) -
L. Hoffmann, G. Ziegler, D. Theis, and C. Weyrich, J. Appl. Phys. 53, 6962 (1982)
(
10.1063/1.330041
) / J. Appl. Phys. by L. Hoffmann (1982) - V.A. Dmitriev, P.A. Ivanov, Ya.V. Morozenko, I.V. Popov, and V.E. Chelnokov, Sov. Tech. Phys. Lett. 11, 101 (1985) / Sov. Tech. Phys. Lett. by V.A. Dmitriev (1985)
- V.A. Dmitriev, Ya.V. Morozenko, I.V. Popov, A.V. Suvorov, A.L. Syrkin, and V.E. Chelnokov, Sov. Tech. Phys. Lett. 12, 221 (1986) / Sov. Tech. Phys. Lett. by V.A. Dmitriev (1986)
-
M.A. Khatibzadeh and R.J. Trev, IEEE Trans. Microwave Theory and Tech., MTT-36, 213 (1988)
(
10.1109/22.3510
) / IEEE Trans. Microwave Theory and Tech., MTT by M.A. Khatibzadeh (1988) - W. von Münch, P. Hoeck, and E. Pettenpaul, in: Technical Digest of 1977, Int. Electronic Device Meeting, (Institute of the Electrical and Electronic Engieers, New York 1977), p. 337 / Technical Digest of 1977, Int. Electronic Device Meeting by W. Münch von (1977)
-
H.S. Kong, J.W. Palmour, J.T. Glass, and R.F. Davis, Appl. Phys. Lett. 51, 442 (1987)
(
10.1063/1.98416
) / Appl. Phys. Lett. by H.S. Kong (1987) -
H. Daimon, M. Yamanaka, M. Shinohara, E. Sakuma, S. Misawa, K. Endo, and S. Yoshida, Appl. Phys. Lett. 51, 2106 (1987)
(
10.1063/1.99010
) / Appl. Phys. Lett. by H. Daimon (1987) -
M. Shur, GaAs Devices and Circuit, (Plenum Press, New York 1987)
(
10.1007/978-1-4899-1989-2
) / GaAs Devices and Circuit by M. Shur (1987) -
K. Shibahara, T. Saito, S. Nishino, and ßsl H. Matsumani, IEEE Electron Dev. Lett. EDL-7, 692 (1986)
(
10.1109/EDL.1986.26522
) / IEEE Electron Dev. Lett. EDL by K. Shibahara (1986) -
Y. Kondo, T. Takahashi, K. Ischii, Y. Hayashi, E. Sakuma, S. Misawa, H. Daimon, M. Yamanaka, and S. Yoshida, Jpn. J. Appl. Phys. 26, 310 (1987)
(
10.1143/JJAP.26.310
) / Jpn. J. Appl. Phys. by Y. Kondo (1987) -
J.W. Palmour, H.S. Kong, and R.F. Davis, Appl. Phys. Lett. 51, 2028 (1987)
(
10.1063/1.98282
) / Appl. Phys. Lett. by J.W. Palmour (1987) -
J.W. Palmour, H.S. Kong, and R.F. Davis, J. Appl. Phys. 64, 2168 (1988)
(
10.1063/1.341731
) / J. Appl. Phys. by J.W. Palmour (1988)
@inbook{Pensl, title={Silicon carbide (SiC)—Recent results in physics and in technology}, ISBN={9783528080389}, url={http://dx.doi.org/10.1007/bfb0108286}, DOI={10.1007/bfb0108286}, booktitle={Festkörperprobleme 30}, publisher={Springer Berlin Heidelberg}, author={Pensl, Gerhard and Helbig, Reinhard}, pages={133–156} }