DOI: 10.1007/bf02817500. Improved CdTe layers on GaAs and Si using atomic layer epitaxy

Improved CdTe layers on GaAs and Si using atomic layer epitaxy

10.1007/bf02817500

Crossref journal-article

Springer Science and Business Media LLC

Journal of Electronic Materials (297)

Bibliography

Wang, W.-S., Ehsani, H., & Bhat, I. (1993). Improved CdTe layers on GaAs and Si using atomic layer epitaxy. Journal of Electronic Materials, 22(8), 873â878.

Authors 3

Wen-Sheng Wang (first)
Hassan Ehsani (additional)
Ishwara Bhat (additional)

References 13 Referenced 28

R. Korenstein, P. Madison and P. Hallock,J. Vac. Sci. Technol. B10, 1370 (1992). (10.1116/1.585870) / J. Vac. Sci. Technol. by R. Korenstein (1992)
R. Sporken, Y.P. Chen, S. Sivananthan, M.D. Lange and J.P. Faurie,J. Vac. Sci. Technol. B10, 1405 (1992). (10.1116/1.585876) / J. Vac. Sci. Technol. by R. Sporken (1992)
J.M. Arias, M. Zandian, S.H. Shin, W.V. McLevige, J.G. Pasko and R.E. Dewames,J. Vac. Sci. Technol. B9, 1646 (1991). (10.1116/1.585438) / J. Vac. Sci. Technol. by J.M. Arias (1991)
S.J.C. Irvine, D.D. Edwall, L.O. Bubulac, R.V. Gil and E.R. Gertner,J. Vac. Sci. Technol. B10, 1392 (1992). (10.1116/1.585874) / J. Vac. Sci. Technol. by S.J.C. Irvine (1992)
H. Shtrikman, M. Oron, A. Raisman and G. Cinader,J. Electron. Mater. 17, 105 (1988). (10.1007/BF02652138) / J. Electron. Mater. by H. Shtrikman (1988)
C. Goodman and M.V. Pessa,J. Appl. Phys. 60, R65 (1986). (10.1063/1.337344) / J. Appl. Phys. by C. Goodman (1986)
I.B. Bhat, H. Ehsani, W.S. Wang, S.K. Ghandhi and N.H. Karam,J. Vac. Sci. Technol. B10, 1376 (1992). (10.1116/1.585871) / J. Vac. Sci. Technol. by I.B. Bhat (1992)
W.S. Wang, H. Ehsani and I.B. Bhat, to appear inJ. Cryst. Growth (1992).
J.B. Mullin and S.J.C. Irvine,J. Vac. Sci. Technol. 21, 178 (1982). (10.1116/1.571707) / J. Vac. Sci. Technol. by J.B. Mullin (1982)
B. Bhat and S.K. Ghandi,J. Electrochem. Soc. 134, 195 (1987). (10.1149/1.2100404) / J. Electrochem. Soc. by B. Bhat (1987)
Y. Lo, R.N. Bicknell, T.H. Myers, J.F. Schetzina and H.H. Stadelmeier,J. Appl. Phys. 54, 4238 (1983). (10.1063/1.332529) / J. Appl. Phys. by Y. Lo (1983)
R.L. Chow, M.S. Lin and K.S. Chou,J. Cryst. Growth 94, 551 (1989). (10.1016/0022-0248(89)90033-X) / J. Cryst. Growth by R.L. Chow (1989)
T.G. Davey and E.H. Baker,J. Mater. Sci. Lett. 15, 1601 (1980). (10.1007/BF00752149) / J. Mater. Sci. Lett. by T.G. Davey (1980)

Dates

Type	When
Created	17 years, 7 months ago (Jan. 19, 2008, 2:07 a.m.)
Deposited	6 years, 3 months ago (May 19, 2019, 12:29 a.m.)
Indexed	1 year, 6 months ago (Feb. 11, 2024, 5:18 a.m.)
Issued	32 years, 1 month ago (Aug. 1, 1993)
Published	32 years, 1 month ago (Aug. 1, 1993)
Published Print	32 years, 1 month ago (Aug. 1, 1993)

Funders 0

None

BibTeX

@article{Wang_1993, title={Improved CdTe layers on GaAs and Si using atomic layer epitaxy}, volume={22}, ISSN={1543-186X}, url={http://dx.doi.org/10.1007/bf02817500}, DOI={10.1007/bf02817500}, number={8}, journal={Journal of Electronic Materials}, publisher={Springer Science and Business Media LLC}, author={Wang, Wen-Sheng and Ehsani, Hassan and Bhat, Ishwara}, year={1993}, month=aug, pages={873–878} }

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